公开(公告)号：KR101375787B1

公开(公告)日：2014-03-18

申请号：KR1020130025094

申请日：2013-03-08

Applicant: 국민대학교산학협력단

Inventor： 전성우 ,  배학열 ,  홍의연 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L22/12 ,  H01L29/78693

Abstract: Disclosed are a method for extracting the state density in a band gap of an amorphous oxide semiconductor thin film transistor, and a device therefor. The method for extracting the state density in a band gap of an amorphous oxide semiconductor thin film transistor according to an embodiment of the present invention comprises the steps of: measuring capacitance and conductance according to gate voltage relative to predetermined frequencies; calculating local capacitance formed by a local trap in a channel based on the measured capacitance and conductance; and extracting the state density in the band gap based on the calculated local capacitance. When the local capacitance is calculated, channel conductance formed at the channel is calculated using the measured capacitance and conductance. As the local capacitance is calculated based on the calculated channel conductance, entire state density in the band gap can be simply and rapidly extracted using only experimentally measured data without iteration procedures and complicated calculation. And local capacitance and free electrons capacitance can be separated quantitatively according to the gate voltage. [Reference numerals] (AA) Start; (BB) End; (S210) Measuring conductance and capacitance according to gate voltage relative to multiple frequencies; (S220) Calculating channel conductance formed at a channel by using the measured capacitance and conductance; (S230) Calculating local capacitance (C_loc) formed by a local trap in the channel based on the calculated channel conductance; (S240) Extracting state density in a band gap based on the calculated local capacitance

Abstract translation: 公开了一种用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法及其装置。 根据本发明实施例的用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法包括以下步骤：根据预定频率的栅极电压测量电容和电导; 基于测量的电容和电导计算由通道中的局部陷阱形成的局部电容; 并根据所计算的局部电容提取带隙中的状态密度。 当计算局部电容时，使用测量的电容和电导计算在通道处形成的沟道电导。 由于局部电容是根据计算出的通道电导计算的，所以可以使用实验测量数据，无需迭代程序和复杂的计算，即可简单快速地提取带隙中的整体状态密度。 局部电容和自由电子电容可根据栅极电压定量分离。 （附图标记）（AA）开始; （BB）结束; （S210）根据多个频率的栅极电压测量电导率和电容值; （S220）通过使用测量的电容和电导计算在通道处形成的通道电导; （S230）基于所计算的通道电导计算由通道中的局部陷阱形成的局部电容（C_loc）; （S240）基于计算的局部电容提取带隙中的状态密度

公开(公告)号：KR101427714B1

公开(公告)日：2014-08-07

申请号：KR1020130135421

申请日：2013-11-08

Applicant: 국민대학교산학협력단

Inventor： 김대환 ,  김동명 ,  전성우

IPC: H01L21/66 ,  H01L29/786

CPC classification number: H01L22/14 ,  H01L22/30 ,  H01L29/78663

Abstract: Disclosed are a method of extracting the surface potential and state density within a band-gap of an amorphous semiconductor thin film transistor using a coupling factor, and a device thereof. The method for extracting the surface potential of the amorphous semiconductor thin film transistor according to an embodiment of the present invention comprises a step of measuring a drain current by a gate voltage of the thin film transistor; a step of extracting a drain current lower than a threshold voltage between the measured drain currents; and a step of extracting the surface potential by the gate voltage of the thin film transistor based on the differentiation of the drain current extracted. The step of extracting the surface potential extracts the surface potential by the gate voltage in the light of a coupling factor included in the surface potential and the extracted drain currents.

Abstract translation: 公开了使用耦合因子提取非晶半导体薄膜晶体管的带隙内的表面电位和状态密度的方法及其装置。 根据本发明实施例的提取非晶半导体薄膜晶体管的表面电位的方法包括通过薄膜晶体管的栅极电压测量漏极电流的步骤; 提取低于测量的漏极电流之间的阈值电压的漏极电流的步骤; 以及基于所提取的漏极电流的微分，通过薄膜晶体管的栅极电压提取表面电位的步骤。 提取表面电位的步骤根据包括在表面电位和提取的漏极电流中的耦合因子，通过栅极电压提取表面电位。