公开(公告)号：KR101375787B1

公开(公告)日：2014-03-18

申请号：KR1020130025094

申请日：2013-03-08

Applicant: 국민대학교산학협력단

Inventor： 전성우 ,  배학열 ,  홍의연 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L22/12 ,  H01L29/78693

Abstract: Disclosed are a method for extracting the state density in a band gap of an amorphous oxide semiconductor thin film transistor, and a device therefor. The method for extracting the state density in a band gap of an amorphous oxide semiconductor thin film transistor according to an embodiment of the present invention comprises the steps of: measuring capacitance and conductance according to gate voltage relative to predetermined frequencies; calculating local capacitance formed by a local trap in a channel based on the measured capacitance and conductance; and extracting the state density in the band gap based on the calculated local capacitance. When the local capacitance is calculated, channel conductance formed at the channel is calculated using the measured capacitance and conductance. As the local capacitance is calculated based on the calculated channel conductance, entire state density in the band gap can be simply and rapidly extracted using only experimentally measured data without iteration procedures and complicated calculation. And local capacitance and free electrons capacitance can be separated quantitatively according to the gate voltage. [Reference numerals] (AA) Start; (BB) End; (S210) Measuring conductance and capacitance according to gate voltage relative to multiple frequencies; (S220) Calculating channel conductance formed at a channel by using the measured capacitance and conductance; (S230) Calculating local capacitance (C_loc) formed by a local trap in the channel based on the calculated channel conductance; (S240) Extracting state density in a band gap based on the calculated local capacitance

Abstract translation: 公开了一种用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法及其装置。 根据本发明实施例的用于提取非晶氧化物半导体薄膜晶体管的带隙中的状态密度的方法包括以下步骤：根据预定频率的栅极电压测量电容和电导; 基于测量的电容和电导计算由通道中的局部陷阱形成的局部电容; 并根据所计算的局部电容提取带隙中的状态密度。 当计算局部电容时，使用测量的电容和电导计算在通道处形成的沟道电导。 由于局部电容是根据计算出的通道电导计算的，所以可以使用实验测量数据，无需迭代程序和复杂的计算，即可简单快速地提取带隙中的整体状态密度。 局部电容和自由电子电容可根据栅极电压定量分离。 （附图标记）（AA）开始; （BB）结束; （S210）根据多个频率的栅极电压测量电导率和电容值; （S220）通过使用测量的电容和电导计算在通道处形成的通道电导; （S230）基于所计算的通道电导计算由通道中的局部陷阱形成的局部电容（C_loc）; （S240）基于计算的局部电容提取带隙中的状态密度

公开(公告)号：KR101375784B1

公开(公告)日：2014-03-18

申请号：KR1020130025150

申请日：2013-03-08

Applicant: 국민대학교산학협력단

Inventor： 홍의연 ,  배학열 ,  김대환 ,  김동명

IPC: H01L21/66 ,  H01L29/786 ,  G02F1/136

CPC classification number: H01L22/12 ,  H01L22/30 ,  H01L29/7869

Abstract: A method for extracting state density inside a band gap of a metal oxide semiconductor field effect transistor using an optical differential body factor and a device thereof are disclosed. The method for extracting the state density inside a band gap of a metal oxide semiconductor field effect transistor according to an embodiment of the present invention includes the steps of: measuring the drain current of a darkroom according to the gate voltage of the metal oxide semiconductor field effect transistor in the darkroom and measuring optical response drain current according to the gate voltage of the metal oxide semiconductor field effect transistor by irradiating the light of a predetermined light source; calculating a darkroom body factor according to the gate voltage using the measured darkroom drain current and calculating an optical response body factor according to the gate voltage using the measured optical response drain current; and extracting the state density inside a band gap of a metal oxide semiconductor field effect transistor based on the calculated darkroom body factor and the optical response body factor. The state density in an independent band of a threshold voltage gap can be extracted without omitting a complicated measurement process and the state density inside the band gap can be simply and rapidly extracted. [Reference numerals] (AA) Start; (BB) End; (S410) Measuring darkroom drain current according to gate voltage in a darkroom; (S420) Measuring optical response drain current according to gate voltage by radiating the light of a light source; (S430) Calculating a darkroom body factor using the darkroom drain current; (S440) Calculating the optical response body factor using the optical response drain current; (S450) Extracting the state density in the band gap based on the differentiation of the darkroom body factor and the optical response body factor

Abstract translation: 公开了一种使用光学差分体因子及其装置提取金属氧化物半导体场效应晶体管的带隙内的状态密度的方法。 根据本发明实施例的用于提取金属氧化物半导体场效应晶体管的带隙内的状态密度的方法包括以下步骤：根据金属氧化物半导体场的栅极电压测量暗室的漏极电流 并且通过照射预定光源的光来测量根据金属氧化物半导体场效应晶体管的栅极电压的光响应漏极电流; 使用测量的暗室漏极电流根据栅极电压计算暗室体因子，并使用测量的光响应漏极电流根据栅极电压计算光响应体系因子; 并且基于计算出的暗室体因子和光响应体因子，提取金属氧化物半导体场效应晶体管的带隙内的状态密度。 可以提取阈值电压间隙的独立频带中的状态密度而不省略复杂的测量过程，并且可以简单且快速地提取带隙内的状态密度。 （附图标记）（AA）开始; （BB）结束; （S410）根据暗室中的栅极电压测量暗室漏极电流; （S420）通过照射光源来测量根据栅极电压的光学响应漏极电流; （S430）使用暗室漏极电流计算暗室体系因子; （S440）使用光学响应漏极电流计算光学响应体因子; （S450）基于暗房体因子和光学响应体因子的差异提取带隙中的状态密度