Abstract:
다층박막 제조방법 및 이에 의하여 제조된 다층박막이 제공된다. 본 발명에 따른 다층박막 제조방법은 광가교성 기능기를 함유하는 고분자 물질에 광을 조사하는 단계를 포함하며, 매우 간단하고, 효과적인 방식으로 종래 기술에 비하여 매우 빠른 속도로 다층박막을 증착, 제조할 수 있으므로, 산업적 측면에서 그 유용성이 매우 높다. 또한, 종래 기술과 같이 소수성 물질에 대한 제조상의 한계가 없으므로 적용 가능 대상 물질이 매우 폭넓으며, 용액 침지 또는 가열 방식이 아닌 빛을 조사하는 방식으로 기판상의 다층박막을 제조할 수 있으므로, 용액 조건에서 손쉽게 제거될 수 있는 기판을 사용하는 경우, 기판이 제거된 다층박막 필름을 용이하게 제조할 수도 있다.
Abstract:
PURPOSE: A method for manufacturing a switching device and the switching device are provided to select and manufacture a switching device with a unipolar or bipolar characteristic by inserting metal nano-particles into the switching device. CONSTITUTION: A polymer thin film and a titanium precursor thin film are repetitively stacked on a lower electrode in order to manufacture a multi-layered thin film. The multi-layered thin film is thermally treated. The titanium precursor thin film is converted into a titanium oxide thin film. An upper electrode is stacked on the multi-layered thin film. The multi-layered thin film includes metal nano-particles.
Abstract:
PURPOSE: Electro-chemical biosensor using multi-layered patterning and a manufacturing method thereof are provided to produce the electro-chemical biosensor of multi-layered structure with a method not to attenuate the biological activity. CONSTITUTION: A method for manufacturing an electro-chemical biosensor using multi-layered patterning comprises steps of: laminating an enzyme layer charged with second electric charges on a substrate charged with first electric charges, selectively laminating a first thin film charged with the first electric charges on the enzyme layer, laminating a second thin film charged with second electric charges on the first thin film, changing the surface charges of the exposed enzyme layer from the second electric charges into the first electric charges, and laminating a third thin film charged with the first electric charges on the second thin film.
Abstract:
PURPOSE: A method for manufacturing a resistance random access memory and the resistance random access memory are provided to include a binary transition-metal oxide using a sol-gel technique. CONSTITUTION: A sol state solution in which a transition-metal precursor is dispersed is gelated. The gelated transition-metal precursor is applied on a lower electrode. The applied transition-metal precursor is thermally treated in order to form a transition-metal oxide thin film. An upper electrode is formed on the transition-metal oxide thin film. The transition-metal oxide thin film includes oxygen cavity.
Abstract:
PURPOSE: A method for manufacturing a multi-layered thin film is provided to deposit the multi-layered thin film at a very high speed, to easily control a thickness, functionality, and a structure, and to be easily applied to an aqueous component. CONSTITUTION: A method for manufacturing a multi-layered thin film comprises the following steps: coating a substrate with a mixed solution of a photo-curable first polymer containing inorganic particles and a photo-curable second polymer with no inorganic particles; spin-coating the coated mixed solution; and hardening the spin-coated mixed solution by irradiating light. The photo-curable first polymer and the second polymer include a photo-crosslinkable functional group.
Abstract:
저항변화 메모리 소자 제조방법 및 이에 따라 제조된 저항변화 메모리 소자가 제공된다. 본 발명에 따른 저항변화 메모리 소자 제조방법은 전이금속 전구체가 분산된 솔 상태의 용액을 젤화(gelation)시키는 단계; 상기 젤화된 전이금속 전구체를 하부 전극 상에 도포하는 단계; 상기 도포된 전이금속 전구체를 열처리하여 전이금속 산화물 박막을 제조하는 단계; 및 상기 티타늄 산화물 박막 상에 상부 전극을 형성시키는 단계를 포함하며, 낮은 구동 전압, 빠른 스위칭 속도, 높은 ON/OFF 비율 및 우수한 전기적 안정성과 같이 뛰어난 전기적 특성을 보이는 소자를 경제적인 방식으로 제조할 수 있게 한다.
Abstract:
PURPOSE: A layer-by-layer multi-layered membrane and a manufacturing method of the same are provided to minimize a melt gap measurement error, thereby reducing an inferiority rate by minimizing a monocrystal quality variation and preventing a process accident due to a melt gap variation during the process in beforehand. CONSTITUTION: A multi-layered membrane is interconnected by a nucleophilic substitution reaction. An insertion part included in a heat shield bottom comprises at least more than one hole. A melt gap measurement stick includes a hook-like shape. The multi-layered membrane is comprised of a first membrane and a second membrane. The first membrane includes a first composition material, a quantum dot, and a nano or metal particle.
Abstract:
나노복합체 제조방법, 이에 의하여 제조된 나노복합체, 이를 포함하는 다층막 및 이를 이용한 전기화학 센서가 제공된다. 본 발명에 따른 나노복합체 제조방법은 금속 나노입자 전구체 용액에 효소를 혼입하는 단계; 및 상기 금속 나노입자 전구체를 환원시켜 상기 효소에 의하여 캡슐화된 금속 나노입자를 제조하는 단계를 포함하며, 여기에서 상기 금속 나노입자를 캡슐화하는 상기 효소의 전하 종류는 용액의 pH 조건에 의존적인 것을 특징으로 하며, 본 발명은 pH 조절을 통하여 카탈라아제와 같은 효소 안정화제의 전하를 변환시킴으로써 효소로부터 금속 나노입자를 직접 합성할 수 있고, 또한 상기 금속 나노입자를 포함하는 다층막 구조는 카탈라아제와 같이 전하의 조절이 가능한 효소와 고분자전해질 층 사이의 정전기적 결합에 의하여 형성되며, 본 발명은 또한, 금속 전구체 용액의 농도, pH 조건에 따라 금속 나노복합체의 형태를 분산상, 콜로이드상, 네트워크상으로 자유로이 선택, 제어할 수 있다.
Abstract:
PURPOSE: A method for manufacturing a multilayered film is provided to ensure rapid process, to control a thickness, functionality and structure by users, and to be applied to aqueous components. CONSTITUTION: A method for manufacturing a multilayered film comprises the steps of: (a) applying a polymer containing a photo-curable first functional group on a substrate; (b) spin-coating the applied polymer; and (c) crosslinking the polymer by irradiating light to the polymer; and further removing the substrate after forming the multilayered film.
Abstract:
A floating gate having multiple charge storing layers, a method for fabricating the floating gate, a non-volatile memory device and a method for fabricating the non-volatile memory device using the same are provided to improve the charge storage capacity of the non-volatile memory device by laminating polyelectrolyte and metal nano crystal in multilayer. A gate structure is formed on the upper side of a silicon substrate(10). The gate structure comprises a tunneling oxide film(11), a floating gate(20) having charge storage layers(12a,13a-12n,13n) of multilayer, a control oxide film(14), and a control gate(15). A source region and a drain region doped with the impurity are formed in the silicon substrate. A channel region is formed between the source region and the drain region. The floating gate is formed on the top of the tunneling oxide film through the self-assembly method. The floating gate is made of the charge storage layer of multilayer.