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公开(公告)号：KR1020100120939A
公开(公告)日：2010-11-17
申请号：KR1020090039824
申请日：2009-05-07
Applicant: 국민대학교산학협력단 , 한양대학교 산학협력단
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L21/26
Abstract: PURPOSE: A manufacturing method of a thin film transistor is provided to inexpensively improve the electrical property of a thin film transistor by executing an ultraviolet irradiation process instead of a thermal processing process in an oxide semiconductor active layer. CONSTITUTION: A gate electrode(110) is formed on a substrate(100). A gate insulating layer(120) is formed on the substrate. A semiconductor active layer(130) is formed on the gate insulating layer. An ultraviolet ray is irradiated onto the semiconductor active layer. A source/drain electrode is formed on the semiconductor active layer.
Abstract translation: 目的：提供薄膜晶体管的制造方法，通过在氧化物半导体活性层中执行紫外线照射处理而不是热处理工艺来廉价地提高薄膜晶体管的电性能。 构成：在基板（100）上形成栅电极（110）。 在基板上形成栅极绝缘层（120）。 半导体有源层（130）形成在栅极绝缘层上。 紫外线照射到半导体活性层上。 源极/漏电极形成在半导体有源层上。
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公开(公告)号：KR101195550B1
公开(公告)日：2012-10-30
申请号：KR1020090039825
申请日：2009-05-07
Applicant: 국민대학교산학협력단 , 한양대학교 산학협력단
IPC: H01L29/786
Abstract: 본 발명은 자기조립단분자층을 이용한 박막트랜지스터의 제조 방법에 관한 것으로서, 보다 상세하게는, 기판, 게이트 전극, 게이트 절연막, 산화물 반도체 활성층 및 소스/드레인 전극을 포함하는 박막트랜지스터의 제조 방법에 있어서, 상기 산화물 반도체 활성층 상에 자외선을 조사한 후 소스/드레인 전극의 패턴에 대응하는 개구 패턴을 포함하는 소수성 자기조립단분자층을 형성하고, 상기 소수성 자기조립단분자층을 마스크로서 이용하여 상기 개구 패턴을 통하여 상기 산화물 반도체 활성층 상에 소스/드레인 전극을 형성하는 것을 포함하는, 박막트랜지스터의 제조 방법에 관한 것이다.
자기조립단분자층, 산화물 반도체 활성층, 자외선, 박막트랜지스터-
公开(公告)号：KR1020100120940A
公开(公告)日：2010-11-17
申请号：KR1020090039825
申请日：2009-05-07
Applicant: 국민대학교산학협력단 , 한양대학교 산학협력단
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L29/41733 , H01L29/66742
Abstract: PURPOSE: A manufacturing method of a thin film transistor is provided to easily manufacture a thin film transistor with low costs by forming a source/drain electrode by using a self-assembled monolayer without an additional mask process. CONSTITUTION: A gate is formed on a substrate(100). A gate insulating layer(110), which covers the gate, is formed in the top of the substrate. An oxide semiconductor active layer(120) is formed on the gate insulating layer. A hydrophobicity self-assembled monolayer(210) is formed on the oxide semiconductor active layer by irradiating a ultraviolet ray to the oxide semiconductor active layer. A source/drain electrode is formed on the oxide semiconductor active layer.
Abstract translation: 目的：提供一种薄膜晶体管的制造方法，通过使用自组装单层形成源/漏电极，而不需要额外的掩模工艺，便于以低成本制造薄膜晶体管。 构成：在基板（100）上形成栅极。 覆盖栅极的栅极绝缘层（110）形成在基板的顶部。 在栅极绝缘层上形成氧化物半导体活性层（120）。 通过向氧化物半导体活性层照射紫外线，在氧化物半导体活性层上形成疏水性自组装单层（210）。 源极/漏电极形成在氧化物半导体有源层上。
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公开(公告)号：KR1020100044087A
公开(公告)日：2010-04-29
申请号：KR1020090085075
申请日：2009-09-09
Applicant: 삼성전자주식회사 , 한양대학교 산학협력단
Abstract: PURPOSE: An electrode ink composition for ink-jet printing is provided to manufacture electrode with minute patterns by an ink jet printing method. CONSTITUTION: An electrode ink composition for ink-jet printing comprises: an electrode active material, and a solvent, wherein the solvent further comprises a first solvent having a boiling point in a range of about 150 to about 170deg.C at 1 atm, and a surface tension of 30 dyne/cm or more at 25deg.C. The first solvent is a solvent comprising an amide group. The electrode composition for the inkjet print comprises the electrode active material and solvent.
Abstract translation: 目的：提供一种用于喷墨打印的电极油墨组合物，通过喷墨打印方法制造具有微小图案的电极。 构成：用于喷墨打印的电极油墨组合物包括：电极活性材料和溶剂，其中所述溶剂还包含沸点在大气压约150至约170℃范围内的第一溶剂，以及 25℃下表面张力30达因/厘米或更高。 第一溶剂是包含酰胺基的溶剂。 用于喷墨打印的电极组合物包括电极活性材料和溶剂。
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