公开(公告)号：KR101347149B1

公开(公告)日：2014-01-22

申请号：KR1020120134248

申请日：2012-11-26

Applicant: 국방과학연구소

Inventor： 정명숙 ,  이진구 ,  고동식 ,  백태종 ,  이상진 ,  최석규 ,  한민 ,  김완식 ,  이기홍 ,  전성호 ,  이석철 ,  곽노성

IPC: H01L21/306 ,  H01L21/3065 ,  H01L29/861

CPC classification number: H01L21/30612 ,  H01L21/3065 ,  H01L21/308

Abstract: The present invention relates to an etching process for manufacturing Gunn diodes and, more specifically, to a processing method for manufacturing InP Gunn diodes using a dry and wet etching process. The present invention has the benefits of both a dry and a wet etching process by using a wet etching process for treating a surface with scum and a redeposited surface of a wafer, after using a dry etching process. [Reference numerals] (AA) Start; (BB) End; (S300) InP wafer preparation; (S310) Dry etching; (S320) Wet etching

Abstract translation: 本发明涉及一种用于制造耿氏二极管的蚀刻工艺，更具体地说，涉及使用干法和湿蚀刻工艺制造InP耿氏二极管的处理方法。 在使用干蚀刻工艺之后，本发明通过使用湿蚀刻工艺用于处理具有浮渣和沉积的晶片表面的表面的干蚀刻和湿蚀刻工艺的优点。 （附图标记）（AA）开始; （BB）结束; （S300）InP晶片制备; （S310）干蚀刻; （S320）湿式蚀刻