公开(公告)号：KR1020080002414A

公开(公告)日：2008-01-04

申请号：KR1020060061253

申请日：2006-06-30

Applicant: 단국대학교 산학협력단

Inventor： 강정원 ,  오명환 ,  장지근 ,  김종무

IPC: H01L29/786

CPC classification number: H01L51/0516 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/0558

Abstract: An organic TFT having an interface stabilizing layer between a gate insulation layer and an organic semiconductor layer is provided to improve an interface scattering phenomenon and an adhesion degree by forming an organic semiconductor layer on a gate insulation layer whose interface is surface-treated. A gate electrode(3) is formed on a substrate(1). A gate insulation layer(4) is formed to cover the gate electrode and the substrate. Source and drain electrodes(5,6) are formed on the gate insulation layer, separated from each other. The source and drain electrodes are covered with an organic semiconductor layer(7). An interface stabilizing layer(8) is formed under the organic semiconductor layer and on the gate insulation layer. The substrate can be made of plastic. A thin film for protection and adhesion can be formed between the upper portion of the plastic substrate and the lower portion of the gate electrode and the gate insulation layer.

Abstract translation: 提供在栅极绝缘层和有机半导体层之间具有界面稳定层的有机TFT，以通过在界面进行表面处理的栅极绝缘层上形成有机半导体层来改善界面散射现象和粘合度。 在基板（1）上形成栅电极（3）。 形成栅极绝缘层（4）以覆盖栅电极和基板。 源极和漏极（5,6）形成在栅极绝缘层上，彼此分离。 源极和漏极被有机半导体层（7）覆盖。 界面稳定层（8）形成在有机半导体层之下和栅极绝缘层上。 基材可以由塑料制成。 可以在塑料基板的上部与栅极电极的下部和栅极绝缘层之间形成用于保护和粘附的薄膜。