公开(公告)号：KR1020010028341A

公开(公告)日：2001-04-06

申请号：KR1019990040523

申请日：1999-09-21

Applicant: 대한민국(기술표준원)

Inventor： 신성호 ,  신재혁 ,  박광자 ,  이재형 ,  백태일

IPC: G02F1/1343

Abstract: PURPOSE: A method of making transparent conductive thin film is provided to reduce a target fabrication cost and to be coated on a plastic substrate, by making the transparent conductive thin film at a lower temperature below 200 deg.C using a powder target. CONSTITUTION: A direct current magnetron sputtering equipment is used in order to fabricate a transparent conductive indium tin oxide(ITO) film using a powder target. ITO powder(90wt% In2O3+10wt% SnO2) is inserted in a circular copper container of a two-inch size and then pressure is forced to the powder. A sola lime glass and a PET film are used as a substrate. When fabricating a thin film, the PET film of the substrate is not heated and a temperature is maintained at a room temperature(within 50 deg.C).

Abstract translation: 目的：提供一种制造透明导电薄膜的方法，通过使用粉末靶将透明导电薄膜在低于200℃的较低温度下降低目标制造成本并涂覆在塑料基板上。 构成：使用直流磁控溅射设备来制造使用粉末靶的透明导电铟锡氧化物（ITO）膜。 将ITO粉末（90重量％In 2 O 3 + 10重量％SnO 2）插入2英寸尺寸的圆形铜容器中，然后将压力强制至粉末。 硅藻土玻璃和PET膜用作基材。 当制造薄膜时，基板的PET膜不被加热并且将温度保持在室温（50℃）内。