公开(公告)号：KR1020140078350A

公开(公告)日：2014-06-25

申请号：KR1020120147622

申请日：2012-12-17

Applicant: 도레이첨단소재 주식회사

Inventor： 박종용 ,  정덕용 ,  김영섭 ,  김동현 ,  정연우

IPC: H01B5/14 ,  G06F3/041 ,  H01B13/00

CPC classification number: H01B5/14 ,  G06F3/041 ,  H01B13/00

Abstract: The present invention relates to a transparent conductive film having improved adhesive strength which secures the initial and long-term reliability of adhesive strength by a vacuum deposition method of depositing Si on the interface of a transparent conductive film and a transparent film and improves transparency and transmission, and a manufacturing method thereof. For this, the transparent conductive film having improved adhesive strength according to the present invention includes a transparent substrate, a first dielectric layer which is an SiOx layer which is formed on the transparent substrate (x is 1

Abstract translation: 本发明涉及一种具有改进的粘合强度的透明导电膜，其通过在透明导电膜和透明膜的界面上沉积Si的真空沉积方法来确保粘合强度的初始和长期可靠性，并提高透明度和透射率 ，及其制造方法。 为此，根据本发明的具有改善的粘合强度的透明导电膜包括透明基板，形成在透明基板上的SiO x层的第一介电层（x为1