公开(公告)号：KR1020140116797A

公开(公告)日：2014-10-06

申请号：KR1020140025589

申请日：2014-03-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 몬덴,다이이치 ,  기타가와,준이치 ,  홍석형 ,  가베,요시로

IPC: H01L21/324

CPC classification number: C30B1/023 ,  C30B29/06 ,  C30B30/00

Abstract: According to the present invention, a single crystal is formed on a substrate surface in the heat treatment for heating a target substrate by introducing a microwave into a processing vessel. For a wafer (W) irradiated with the microwave and an amorphous silicon formed on the wafer (W), the amorphous silicon is single crystallized on the interface of the wafer (W) and the amorphous silicon. The regions other than the interface are heated at a first temperature, which does not cause nucleation, for a predetermined period, and is heated at a second temperature higher than the first temperature.

Abstract translation: 根据本发明，在用于通过将微波引入处理容器来加热目标基板的热处理中，在基板表面上形成单晶。 对于用微波照射的晶片（W）和形成在晶片（W）上的非晶硅，非晶硅在晶片（W）和非晶硅的界面上单晶化。 界面以外的区域在不会造成成核的第一温度下加热预定时间，并且在比第一温度高的第二温度下被加热。