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公开(公告)号：KR1020130075695A
公开(公告)日：2013-07-05
申请号：KR1020120153211
申请日：2012-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/44 , C23C16/50 , H01L21/205
CPC classification number: C23C16/45536 , C23C14/00 , C23C16/045 , C23C16/402 , C23C16/45519 , C23C16/45529 , C23C16/45551 , H01L21/02164 , H01L21/0228 , H01L21/30 , H01L21/76224
Abstract: PURPOSE: A method for forming a film is provided to prevent the reaction of Si-contained gas and oxidation gas in a vacuum container and to accurately maintain airtightness between a ceiling plate and a frame member. CONSTITUTION: A method for forming a film is as follows: a step of controlling the adsorption distribution of a hydroxyl group in a depth direction of a recessed part (24) of a base plate; a step of supply first reaction gas on the base plate on which the hydroxyl group is adsorbed; and a step of supply second reaction gas on the base plate on which the first reaction gas is adsorbed. [Reference numerals] (100) Control unit; (101) Memory unit; (102) Medium; (AA,BB,CC,DD) N-2 gas
Abstract translation: 目的：提供一种形成膜的方法，以防止真空容器中的含Si气体和氧化气体的反应，并且能够精确地保持顶板和框架构件之间的气密性。 构成：形成膜的方法如下：控制基板的凹部（24）的深度方向的羟基的吸附分布的工序; 在其上吸附有羟基的基板上供应第一反应气体的步骤; 以及在其上吸附有第一反应气体的基板上供给第二反应气体的步骤。 （附图标记）（100）控制单元; （101）存储单元; （102）中等; （AA，BB，CC，DD）N-2气体
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公开(公告)号：KR101595148B1
公开(公告)日：2016-02-17
申请号：KR1020120153211
申请日：2012-12-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: C23C16/44 , C23C16/50 , H01L21/205
CPC classification number: C23C16/45536 , C23C14/00 , C23C16/045 , C23C16/402 , C23C16/45519 , C23C16/45529 , C23C16/45551 , H01L21/02164 , H01L21/0228 , H01L21/30 , H01L21/76224
Abstract: 오목부가형성된기판상에, 수산기에흡착되기쉬운제1 반응가스와, 당해제1 반응가스와반응하는제2 반응가스의반응생성물에의한막을성막하는성막방법이며, 상기기판의상기오목부의깊이방향에있어서의수산기의흡착분포를제어하는스텝과, 상기수산기가흡착된상기기판상에상기제1 반응가스를공급하는스텝과, 상기제1 반응가스가흡착된상기기판상에상기제2 반응가스를공급하는스텝을포함하는성막방법.
Abstract translation: 一种成膜方法，用于在容易吸附在羟基上的第一反应气体和与第一反应气体反应的第二反应气体的反应产物的膜上形成凹部， 该方法包括以下步骤：控制第一反应气体中羟基的吸附分布;将第一反应气体供应到其上吸附有羟基的基板上; 以及将沉积气体供应到沉积室的步骤。
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