公开(公告)号：KR1020120112147A

公开(公告)日：2012-10-11

申请号：KR1020120031835

申请日：2012-03-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠준 ,  고시미즈치쇼

IPC: H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32091 ,  H01J37/32642 ,  H01J37/32715

Abstract: PURPOSE: A plasma processing apparatus is provided to control temperature rise of a ring member when plasma is radiated by installing a heat transfer member and an insulating member between a ring member and an arrangement table. CONSTITUTION: A ring member(5) is installed on a stepped part(31) of an arrangement table(3). The ring member adjusts the state of plasma. An insulating member(6) is installed to be concentric to the center of a substrate(W) on the arrangement table. The insulating member adjusts a potential difference between the substrate and the ring member. A heat transfer member(7) is installed between an upper side of the arrangement table and a lower side of the ring member. [Reference numerals] (3) Placement; (5) Focus ring; (6,7) Insulating member

Abstract translation: 目的：提供一种等离子体处理装置，用于通过将传热构件和绝缘构件安装在环构件和布置台之间来控制等离子体时的环构件的温度上升。 构成：环状构件（5）安装在排列台（3）的台阶部（31）上。 环件调节等离子体的状态。 绝缘构件（6）安装成与布置台上的基板（W）的中心同心。 绝缘构件调整基板和环构件之间的电位差。 传热构件（7）安装在排列台的上侧和环构件的下侧之间。 （附图标记）（3）放置; （5）聚焦环; （6,7）绝缘件

公开(公告)号：KR101910670B1

公开(公告)日：2018-10-22

申请号：KR1020120031835

申请日：2012-03-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마와쿠준 ,  고시미즈치쇼

IPC: H01L21/3065 ,  H01L21/205

CPC classification number: H01J37/32091 ,  H01J37/32642 ,  H01J37/32715

Abstract: 본발명은링 부재의온도를제어함으로써기판이면에의퇴적물의부착량을억제하는것에관한것이다. 용량결합형플라즈마에칭장치에있어서, 배치대(3)의기판배치영역(32)을둘러싸도록상기배치대(3) 상에플라즈마의상태를조정하기위한포커스링(5)을설치한다. 또한, 상기배치대(3)의상면과상기포커스링(5)의하면사이에, 포커스링(5)을따라링형의절연부재(6)를설치하고, 이절연부재(6)에대하여웨이퍼(W)의직경방향으로인접하는위치에있어서, 상기배치대(3)의상면과상기포커스링(5)의하면사이에, 이들상면및 하면에밀착되도록전열부재(7)를설치한다. 플라즈마처리시에, 포커스링(5)의열은전열부재(7)를통해배치대(3)에전달되기때문에, 포커스링(5)이냉각되고, 웨이퍼(W)의이면에의퇴적물의부착량을저감할수 있다.