公开(公告)号：KR100430189B1

公开(公告)日：2004-05-03

申请号：KR1019997003072

申请日：1997-10-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야츠다고이치 ,  니시아라데츠야 ,  이나자와고우이치로 ,  오카모토신

IPC: H01L21/3065

CPC classification number: H01L21/31116

Abstract: An etching gas is supplied into a process chamber (16) and turned into plasma so as to etch a silicon nitride film (12) arranged on a field silicon oxide film (4) on a wafer (w). A mixture gas containing at least CH2F2 gas and O2 gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH2F2/O2) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.

Abstract translation: 蚀刻气体被供给到处理室（16）中并变成等离子体，以蚀刻在晶片（w）上的场氧化硅膜（4）上布置的氮化硅膜（12）。 使用至少包含CH 2 F 2气体和O 2气体的混合气体作为蚀刻气体。 蚀刻装置根据平面均匀性的设定值设定的面均匀性参数包括处理压力和混合气体的混合比（CH 2 F 2 / O 2）。 由于平面均匀性的设定值更严格，所以处理压力和混合比中的任一个设定得更高。 ＆lt;图像＆GT;

公开(公告)号：KR1020000049010A

公开(公告)日：2000-07-25

申请号：KR1019997003072

申请日：1997-10-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야츠다고이치 ,  니시아라데츠야 ,  이나자와고우이치로 ,  오카모토신

IPC: H01L21/3065

CPC classification number: H01L21/31116

Abstract: PURPOSE: A plasma etching method is provided to present a good balance between the etching selectivity and the etching planar uniformity of silicon nitride relative to silicon oxide and silicon. CONSTITUTION: An etching gas is supplied into a process chamber(16) and turned into plasma so as to etch a silicon nitride film(12) arranged on a field silicon oxide film(4) on a wafer(w). A mixture gas containing at least CH2F2 gas and O2 gas is used as the etching gas. Parameters for planar uniformity, by which the etching apparatus is set in light of a set value of the planar uniformity, include the process pressure and the mixture ratio (CH2F2/O2) of the mixture gas. As the set value of the planar uniformity is more strict, either one of the process pressure and the mixture ratio is set higher.

Abstract translation: 目的：提供等离子体蚀刻方法，以在氮化硅相对于氧化硅和硅的蚀刻选择性和蚀刻平面均匀性之间保持良好的平衡。 构成：将蚀刻气体供应到处理室（16）中并变成等离子体，以蚀刻布置在晶片（w）上的场氧化硅膜（4）上的氮化硅膜（12）。 使用至少含有CH2F2气体和O2气体的混合气体作为蚀刻气体。 基于平面均匀性的设定值设定蚀刻装置的平面均匀性的参数包括处理压力和混合气体的混合比（CH2F2 / O2）。 由于平面均匀性的设定值更严格，所以将工艺压力和混合比中的任一个设定得更高。