公开(公告)号：KR1020070122150A

公开(公告)日：2007-12-28

申请号：KR1020070061316

申请日：2007-06-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 안바이가쯔히꼬 ,  오이까와마사유끼 ,  시바따데쯔야 ,  다니유우이찌

IPC: H01L21/324 ,  H01L21/31 ,  C23C16/44 ,  H01L21/22

CPC classification number: H01L21/67306 ,  Y10S438/905 ,  Y10S438/935

Abstract: A method of backing a quartz product, a computer program and a storage medium are provided to suppress copper contamination of a semiconductor substrate by improving a profile of the copper contamination in a depth direction of the copper contamination. A quartz product is placed in a reaction vessel(2) of a hat treatment apparatus, and at least a portion of the quartz product is located in a heating atmosphere in the reaction vessel. After the quartz product to be subjected to heat treatment is placed in the reaction vessel, baking gases including a hydrogen chloride gas and a gas for enhancing reactivity of the hydrogen chloride gas are supplied into the reaction vessel, while heating the reaction vessel. Copper contaminated during the manufacturing process of the quartz product is removed for copper concentration in a region from a surface to 30 micrometers depth of the quartz product to be controlled below 20 ppb.

Abstract translation: 提供背衬石英产品，计算机程序和存储介质的方法，以通过改善铜污染深度方向上的铜污染的轮廓来抑制半导体衬底的铜污染。 将石英产品放置在帽子处理装置的反应容器（2）中，并且至少一部分石英产品位于反应容器中的加热气氛中。 在将待加热处理的石英产品置于反应容器中之后，在加热反应容器的同时将包括氯化氢气体和用于提高氯化氢气体的反应性的气体的烘烤气体供给到反应容器中。 在石英产品的制造过程中污染的铜被去除，以使铜浓度在从石英产品的表面到30微米深度的区域中被控制在20ppb以下。

公开(公告)号：KR1020070070095A

公开(公告)日：2007-07-03

申请号：KR1020060134767

申请日：2006-12-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다니유우이찌

IPC: H01L21/22

CPC classification number: F27B17/0025 ,  F27B5/04 ,  F27D5/0037 ,  H01L21/67309

Abstract: A vertical type boat and a vertical type heat treatment apparatus are provided to prevent the generation of defects on a substrate due to the slip of the substrate using an improved support plate. A vertical type boat includes a fixing member, a plurality of support pillars(12) fixed along a circumferential direction of the fixing member, hook parts spaced apart from each other along each support pillar, and a plurality of annular type support plates. The annular type support plates(13) are supported by the hook parts, respectively. The annular type support plate is used for supporting a substrate. An upper surface of the annular type support plate goes from an edge portion down to a center portion in consideration of the deformation of the substrate during a heat treatment. A groove is formed on the upper surface of the annular type support plate.

Abstract translation: 提供了垂直型船和垂直式热处理装置，以防止由于使用改进的支撑板的基板的滑动而在基板上产生缺陷。 垂直型船包括固定构件，沿着固定构件的圆周方向固定的多个支撑柱（12），沿着每个支柱彼此间隔开的钩部件以及多个环形支撑板。 环形支撑板（13）分别由钩部支撑。 环状支撑板用于支撑基板。 考虑到热处理期间的基板的变形，环形支撑板的上表面从边缘部分向下移动到中心部分。 在环状支撑板的上表面上形成有槽。

公开(公告)号：KR1020070122153A

公开(公告)日：2007-12-28

申请号：KR1020070061319

申请日：2007-06-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 안바이가쯔히꼬 ,  오이까와마사유끼 ,  시바따데쯔야 ,  다니유우이찌

IPC: H01L21/31 ,  H01L21/22 ,  H01L21/205

CPC classification number: C23C16/4404 ,  C23C16/4581 ,  H01L21/324

Abstract: A quartz product and a heat treatment apparatus are provided to suppress copper contamination of a semiconductor substrate by improving a profile of the copper contamination in a depth direction of the copper contamination through baking of the quartz product. A quartz product is placed in a reaction vessel(2) for receiving a substrate and performing heat treatment to the substrate. At least a portion of the quartz product is located in a heating atmosphere in the reaction vessel. After the quartz product to be subjected to heat treatment is placed in the reaction vessel, baking gases including a hydrogen chloride gas and a gas for enhancing reactivity of the hydrogen chloride gas are supplied into the reaction vessel, while heating the reaction vessel. Copper contaminated during the manufacturing process of the quartz product is removed through a baking process, for copper concentration in a region from a surface to 30 micrometers depth of the quartz product to be controlled below 20 ppb.

Abstract translation: 提供了一种石英产品和热处理设备，以通过烧制石英产品来改善铜污染深度方向上的铜污染物的轮廓来抑制半导体衬底的铜污染。 将石英产品放置在反应容器（2）中，用于接收基材并对基材进行热处理。 至少一部分石英产品位于反应容器中的加热气氛中。 在将待加热处理的石英产品置于反应容器中之后，在加热反应容器的同时将包括氯化氢气体和用于提高氯化氢气体的反应性的气体的烘烤气体供给到反应容器中。 在石英产品的制造过程中被污染的铜通过烘烤过程被去除，从而将石英产物的表面至30微米深度的区域中的铜浓度控制在20ppb以下。