公开(公告)号：KR101655929B1

公开(公告)日：2016-09-08

申请号：KR1020130044525

申请日：2013-04-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카하시카즈야 ,  후루사와요시카즈 ,  오카다미츠히로

IPC: H01L21/223 ,  H01L21/28

CPC classification number: H01L21/2236 ,  H01L21/28035

Abstract: (과제) 박막에대하여, 보다단시간으로, 보다고농도로불순물을기상(氣相) 확산시키는것이가능한불순물확산방법을제공하는것이다. (해결수단) 처리실에, 박막이형성된피(被)처리체를반입하는공정(스텝 1)과, 처리실내에서, 박막이형성된피처리체를기상확산온도까지승온(昇溫)하는공정(스텝 3)과, 처리실내에, 불순물을함유하는불순물함유가스를불활성가스와함께공급하여, 기상확산온도로승온된피처리체에형성된박막중에불순물을확산시키는공정(스텝 4)을구비하고, 스텝 4에있어서, 처리실내에, 불순물함유가스및 불활성가스와함께, 박막으로의불순물의확산을촉진시키는불순물확산촉진가스를동시에공급한다.

公开(公告)号：KR1020130121728A

公开(公告)日：2013-11-06

申请号：KR1020130044525

申请日：2013-04-23

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 다카하시카즈야 ,  후루사와요시카즈 ,  오카다미츠히로

IPC: H01L21/223 ,  H01L21/28

CPC classification number: H01L21/2236 ,  H01L21/28035

Abstract: Provided is an impurity diffusion method capable of vapor-diffusing a high doped impurity in a short time with regard to a thin film. A step (step 1) for supplying an object with the thin film to a process room, a step (step 3) for heating the object with the thin film to a vapor diffusion temperature, a step (step 4) for diffusing the impurity in the thin film formed in the vapor-diffusion-temperature-heated objects by supplying an inert gas and an impurity-containing gas including the impurity to the process room. In the fourth step, the inert gas, the impurity-containing gas, an impurity diffusion promotion gas for promoting the diffusion of the impurity into the thin film together are supplied to the process chamber. [Reference numerals] (AA) Intake;(BB,EE,GG) Exhaust;(CC) Temperature rising;(DD) Gaseous phase diffusion;(FF) Temperature lowering;(HH) Outtake;(II) Step1;(JJ) Step2;(KK) Step3;(LL) Step4;(MM) Step5;(NN) Step6;(OO) Step7;(PP) Step8;(QQ) Temperature;(RR) Gaseous phase diffusion temperature;(SS,UU) Atmospheric pressure;(TT) Gaseous phase diffusion pressure;(VV) Pressure;(WW) Inert gas;(XX) Impurity-containing gas;(YY) Impurity diffusion-promoting gas;(ZZ) Oxidizer-containing gas

Abstract translation: 提供了能够在短时间内相对于薄膜气相扩散高掺杂杂质的杂质扩散方法。 用于将物体供给到处理室的步骤（步骤1），用于将物体用薄膜加热到蒸气扩散温度的步骤（步骤3），用于使杂质扩散的步骤（步骤4） 通过向处理室供给包含杂质的惰性气体和含杂质气体，形成在蒸气扩散温度加热对象物中的薄膜。 在第四步骤中，将惰性气体，含杂质气体，用于促进杂质向薄膜扩散的杂质扩散促进气体一起供给到处理室。 （AA）进气（BB，EE，GG）排气;（CC）升温;（DD）气相扩散;（FF）降温;（HH）输出;（II）步骤1;（JJ） 步骤2;（KK）步骤3;（LL）步骤4;（MM）步骤5;（NN）步骤6;（OO）步骤7;（PP）步骤8;（QQ）温度;（RR）气相扩散温度;（SS，UU） 大气压;（TT）气相扩散压力;（VV）压力;（WW）惰性气体;（XX）含杂质气体;（YY）杂质扩散促进气体;（ZZ）含氧化气体