公开(公告)号：KR1020120112141A

公开(公告)日：2012-10-11

申请号：KR1020120031747

申请日：2012-03-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오까다미쯔히로 ,  도조유끼오 ,  다고겐지 ,  니시무라가즈아끼

IPC: H01L21/302

CPC classification number: C23C16/345 ,  C23C16/4405

Abstract: PURPOSE: A method for cleaning a thin film forming apparatus, a thin film forming method, and a thin film forming apparatus are provided to increase an etching rate of an attachment attached within the apparatus by supplying fluorine gas and hydrogen fluoride gas within a heated reaction tube. CONSTITUTION: A reaction tube(2) forms a reaction chamber. A top portion(3) formed in a cone shape is installed on a top end portion of the reaction tube. An exhaust pipe(4) for exhausting gas within the reaction tube is installed in the center of the top portion. A spinning table(10) loads a wafer boat(11) which receives a wafer(W). A rotary support(12) is connected to a rotating mechanism(13) passing through the center of a heater(8). [Reference numerals] (100) Control unit

Abstract translation: 目的：提供一种清洗薄膜形成装置，薄膜​​形成方法和薄膜形成装置的方法，以通过在加热反应中供应氟气和氟化氢气体来提高附着在装置内的附着物的蚀刻速率 管。 构成：反应管（2）形成反应室。 形成为锥形的顶部（3）安装在反应管的顶端部分上。 用于排出反应管内的气体的排气管（4）安装在顶部的中心。 旋转台（10）装载接收晶片（W）的晶片舟（11）。 旋转支撑件（12）连接到通过加热器（8）的中心的旋转机构（13）。 （附图标记）（100）控制单元