산화 금속막 형성 방법 및 그 장치
    1.
    发明授权
    산화 금속막 형성 방법 및 그 장치 有权
    산화금속막형성방법및그장치

    公开(公告)号:KR100397015B1

    公开(公告)日:2003-09-02

    申请号:KR1020000047825

    申请日:2000-08-18

    Abstract: In a metal oxide film formation method, a source gas mixture of organic compound gases containing at least three metals, and an oxidation gas are individually prepared. While the substrate is heated, the oxidation gas is supplied to a substrate set in a closed vessel at a predetermined pressure, and then the gas mixture is supplied. A metal oxide film is formed on the substrate. A metal oxide film formation apparatus is also disclosed.

    Abstract translation: 在金属氧化物膜形成方法中,分别制备含有至少三种金属的有机化合物气体和氧化气体的原料气体混合物。 在加热衬底的同时,将氧化气体以预定压力供应到设置在密闭容器中的衬底,然后供应气体混合物。 在基板上形成金属氧化物膜。 还公开了一种金属氧化物膜形成装置。

    산화 금속막 형성 방법 및 그 장치
    2.
    发明公开
    산화 금속막 형성 방법 및 그 장치 有权
    薄膜成型方法和薄膜成型装置

    公开(公告)号:KR1020010050122A

    公开(公告)日:2001-06-15

    申请号:KR1020000047825

    申请日:2000-08-18

    Abstract: PURPOSE: To form a BST film having higher quality. CONSTITUTION: In a shower chamber 106, source gas and a trace amt. of oxidizing gas are mixed, and premix gas obtd. by mixing the source gas and oxidizing gas is fed to the surface of a substrate 103 from a premix gas discharging port 108. Then, by discharging a large quantity of oxidizing gas from an another oxidizing gas discharging port 109, this large quantity of oxidizing gas and the premix gas discharged to the surface of the substrate 103 are mixed on the substrate 103.

    Abstract translation: 目的:形成具有较高质量的BST胶片。 构成:在淋浴室106中,源气体和痕迹。 的氧化气体混合,预混合气体。 通过混合源气体和氧化气体从预混气体排出口108供给到基板103的表面。然后,通过从另一氧化剂气体排出口109排出大量的氧化气体,该大量的氧化气体 并且将排出到基板103的表面的预混合气体混合在基板103上。

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