公开(公告)号：KR1020120071362A

公开(公告)日：2012-07-02

申请号：KR1020110139919

申请日：2011-12-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 기쿠치에이이치로 ,  나가야마노부유키 ,  미야이다카히로

IPC: H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32165 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

Abstract: PURPOSE: A substrate processing apparatus and a method thereof are provided to independently control the temperature of a focus ring by independently providing electrothermal gas to a rear side of a focus ring. CONSTITUTION: A process chamber(102) has a processing container shaped in a cylindrical shape. A placement table(110) for placing a wafer(W) is installed at the inner bottom of the process chamber. The placement table includes a susceptor(114) consisting of an insulator(112) and a bottom electrode. An electrostatic chuck(120) is installed on the top of the susceptor. An electrothermal gas supply device(200) supplies electrothermal gas to a rear side of the wafer and the rear side of a focus ring.

Abstract translation: 目的：提供一种基板处理装置及其方法，通过独立地向聚焦环的后侧提供电热气体来独立地控制聚焦环的温度。 构成：处理室（102）具有成形为圆柱形的处理容器。 用于放置晶片（W）的放置台（110）安装在处理室的内底部。 放置台包括由绝缘体（112）和底部电极组成的基座（114）。 静电吸盘（120）安装在基座的顶部。 电热气体供给装置（200）向晶片的后侧和聚焦环的后侧供给电热气体。

公开(公告)号：KR101995449B1

公开(公告)日：2019-07-02

申请号：KR1020110139919

申请日：2011-12-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 기쿠치에이이치로 ,  나가야마노부유키 ,  미야이다카히로

IPC: H01L21/3065