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公开(公告)号：KR1020120071362A
公开(公告)日：2012-07-02
申请号：KR1020110139919
申请日：2011-12-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: H01J37/32642 , H01J37/32165 , H01J37/32724 , H01L21/67069 , H01L21/67109 , H01L21/6831
Abstract: PURPOSE: A substrate processing apparatus and a method thereof are provided to independently control the temperature of a focus ring by independently providing electrothermal gas to a rear side of a focus ring. CONSTITUTION: A process chamber(102) has a processing container shaped in a cylindrical shape. A placement table(110) for placing a wafer(W) is installed at the inner bottom of the process chamber. The placement table includes a susceptor(114) consisting of an insulator(112) and a bottom electrode. An electrostatic chuck(120) is installed on the top of the susceptor. An electrothermal gas supply device(200) supplies electrothermal gas to a rear side of the wafer and the rear side of a focus ring.
Abstract translation: 目的：提供一种基板处理装置及其方法，通过独立地向聚焦环的后侧提供电热气体来独立地控制聚焦环的温度。 构成：处理室（102）具有成形为圆柱形的处理容器。 用于放置晶片（W）的放置台（110）安装在处理室的内底部。 放置台包括由绝缘体（112）和底部电极组成的基座（114）。 静电吸盘（120）安装在基座的顶部。 电热气体供给装置（200）向晶片的后侧和聚焦环的后侧供给电热气体。
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公开(公告)号：KR1020120031911A
公开(公告)日：2012-04-04
申请号：KR1020110097001
申请日：2011-09-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46
CPC classification number: H01J37/32449 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/505 , C23C16/509 , H01J37/32009 , H01J37/3244 , H01J37/32541
Abstract: PURPOSE: A plasma etching processing apparatus and an electrode plate are provided to form different types of vents on the electrode plate, thereby optimizing vent arrangements. CONSTITUTION: A plurality of vents is formed on a plurality of different circumferences. The circumference has a concentric circle shape. The vent vertically penetrates one surface of an electrode plate(160). The vents of different types are formed on each region in which the electrode plate is divided into two or more regions in a diameter direction. A bent type vent is included in the vents of the different types.
Abstract translation: 目的：提供等离子体蚀刻处理装置和电极板，以在电极板上形成不同类型的通风孔，从而优化排气装置。 构成：在多个不同的圆周上形成多个通风口。 圆周具有同心圆形。 通气孔垂直地穿过电极板（160）的一个表面。 不同类型的通风口形成在电极板沿直径方向分成两个或更多个区域的每个区域上。 不同类型的通风口中包括弯曲型通风口。
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公开(公告)号：KR1020080039317A
公开(公告)日：2008-05-07
申请号：KR1020070110165
申请日：2007-10-31
Applicant: 가부시키가이샤 후지미인코퍼레이티드 , 도쿄엘렉트론가부시키가이샤
CPC classification number: C23C4/10 , C23C4/11 , C23C4/12 , Y10T428/2982
Abstract: A thermal spray powder, a method for forming thermal spray coating, and a plasma resistant member provided to improve the quality of thermal spray coating by allowing thermal spray powder to have a high fluidity. A thermal spray powder comprises granulated and sintered particles containing oxide of one rare earth of elements having an atomic number of 60 to 70. A primary particle, which constitutes the granulated and sintered particles, has an average grain size of 2mum to 10mum. The granulated and sintered particles have a crushing strength of 7MPa to 50MPa. A ratio of general specific gravity to true specific gravity of the thermal spray powder is 0.10 to 0.30. A frequency distribution of pores in the granulated and sintered particles has a local maximum value within the range of 1mum or more. The thermal spray powder is subject to plasma thermal spray coating, thereby forming thermal spray coating.
Abstract translation: 一种热喷涂粉末，一种形成热喷涂的方法和一种等离子体耐蚀部件，用于通过允许热喷涂粉末具有高流动性来提高热喷涂的质量。 热喷涂粉末包含粒状和烧结颗粒，其含有原子序数为60〜70的一种稀土元素的氧化物。构成粒状烧结颗粒的一次粒子的平均粒径为2μm〜10μm。 造粒和烧结颗粒的破碎强度为7MPa至50MPa。 热喷雾粉末的一般比重与真比重的比为0.10〜0.30。 粒状和烧结颗粒中的孔的频率分布的局部最大值在1mum以上的范围内。 热喷涂粉末经受等离子体热喷涂，从而形成热喷涂。
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公开(公告)号：KR1020080034796A
公开(公告)日：2008-04-22
申请号：KR1020070104008
申请日：2007-10-16
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/00 , H01L21/3065
CPC classification number: H01L21/6831 , H01J37/32495 , H01J37/32559 , H01J2237/2007 , H01L21/67069 , H01L21/68757
Abstract: A substrate stage and a plasma processing apparatus is provided to reduce replacement of an electrostatic chuck for a long period of time since the substrate stage has an oxide film made of a IIIA group element of a periodic system, which is highly resistant to plasma, and prevent reduction in cooling efficiency of a focus ring by forming a thin coating covering a focus ring placement part. A substrate stage for mounting a substrate(W) which is subjected to a plasma process, comprises a focus ring placement part(39), and a substrate mounting part(40). The focus ring placement part is configured to place a focus ring(19) that surrounds a substrate mounted on the substrate stage. The substrate mounting part overhangs beyond the focus ring placement part at an inside position of the focus ring placement part, having an electrostatic chuck(16) having a mounting drawing and holding the substrate on an upper side of the substrate mounting part, and an oxide film(38) of a predetermined thickness and made of a IIIA group element of a periodic system.
Abstract translation: 提供了基板载台和等离子体处理装置，以减少长时间的静电卡盘的更换，因为基片载物台具有由对等离子体具有高度耐受性的周期性系统的IIIA族元素构成的氧化膜，以及 通过形成覆盖聚焦环放置部分的薄涂层来防止聚焦环的冷却效率降低。 用于安装经受等离子体处理的衬底（W）的衬底台包括聚焦环放置部分（39）和衬底安装部分（40）。 焦点环放置部分被配置为放置围绕安装在衬底台上的衬底的聚焦环（19）。 基板安装部分在焦点环放置部分的内部位置上伸出聚焦环放置部分，具有具有安装图的静电卡盘（16）并将基板保持在基板安装部分的上侧，并且氧化物 膜（38），其由周期性系统的IIIA族元素制成。
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公开(公告)号：KR1020040007543A
公开(公告)日：2004-01-24
申请号：KR1020037014519
申请日：2002-04-03
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
CPC classification number: C23C16/4405 , C23C16/4404
Abstract: 피복막을 형성하는 피복제(51)를 고리화 고무-비스아지드 등의 주성분과 감광제로 이루어지는 레지스트로 하고, 챔버내 부품(50)에 형성된 피복제(51)의 피복막에 퇴적한 디포지트(52)를 챔버(22)내로부터 분리한 챔버내 부품(50)과 함께 아세톤 등의 박리액에 침지함으로써, 피복막에 부착한 채로 피복막의 박리와 함께 챔버내 부품(50)으로부터 분리할 수 있다.
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Patent Agency Ranking
公开(公告)号：KR1020010043824A
公开(公告)日：2001-05-25
申请号：KR1020007013264
申请日：1999-05-25
Applicant: 닛토 케미칼 인더스트리즈 리미티드 , 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02
Abstract: 반도체 처리장치의 부품 상에 침착되고 C와 F를 함유하는 처리 가스의 분해물질로부터 유도되는 부산물을 제거하기 위하여 세정액이 사용된다. 이러한 세정액은 N-메틸-2-피롤리돈 75중량%, 에틸렌 글리콜 모노부틸 에테르 15중량%, 계면 활성제 0.5중량% 및 물 9.5중량%로 구성된다. 이러한 세정액에 있어서의 알칼리 금속의 함유량은 1Oppb 미만으로 되도록 설정된다.
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公开(公告)号：KR101995449B1
公开(公告)日：2019-07-02
申请号：KR1020110139919
申请日：2011-12-22
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065
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公开(公告)号：KR101898079B1
公开(公告)日：2018-09-12
申请号：KR1020110115722
申请日：2011-11-08
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205
CPC classification number: H01L21/67069 , H01J37/32642 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6831
Abstract: (과제) 피(被)처리기판의주연부(周緣部)의온도상승을억제함으로써플라즈마처리의면내균일성을향상시킬수 있어, 균일한플라즈마처리를행할수 있는플라즈마처리장치를제공한다. (해결수단) 내부를기밀하게(airtightly) 폐색가능하게된 처리챔버와, 처리챔버내에처리가스를공급하는처리가스공급기구와, 처리챔버내로부터배기하기위한배기기구와, 처리가스의플라즈마를생성하기위한플라즈마생성기구와, 처리챔버내에설치되어, 피처리기판과당해피처리기판의주위를둘러싸도록설치되는포커스링이동일한평면에올려놓여지도록구성된재치대(holding stage)와, 재치대의온도를조절하는온도조절기구와, 재치대의상면에설치되어, 포커스링의하부에까지연재(extending)되는흡착용전극을갖는정전척(electrostatic chuck)을구비한플라즈마처리장치.
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公开(公告)号：KR101783886B1
公开(公告)日：2017-10-10
申请号：KR1020110097001
申请日：2011-09-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46
CPC classification number: H01J37/32449 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/505 , C23C16/509 , H01J37/32009 , H01J37/3244 , H01J37/32541
Abstract: (과제) 전극판을관통하는복수타입의가스구멍의배치를최적화하는것이가능한, 플라즈마에칭용의전극판을제공한다. (해결수단) 플라즈마에칭용의전극판(160)은, 소정의두께를갖는원판형상이며, 동심원형상의복수의상이한원주상에는, 전극판(160)의한쪽의면을수직으로관통하는복수의가스구멍이형성되고, 전극판(160)을지름방향으로 2 이상의영역으로나눈각 영역에상이한타입의가스구멍이형성되어있다.
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公开(公告)号：KR101672859B1
公开(公告)日：2016-11-04
申请号：KR1020100099915
申请日：2010-10-13
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/67
CPC classification number: H01L21/67248 , H01L21/67109
Abstract: 기판의온도상승을신속하게행할수 있고, 열에너지의손실을저감할수 있는기판재치대의온도제어시스템을제공한다. 히터유닛(14)과열 매체유로(15)를내장하고, 플라즈마에칭처리가실시되는웨이퍼(W)를재치하는서셉터(12)의냉매순환시스템은, 열매체유로(15)에접속되어비교적저온의냉매를열 매체유로(15)로공급하는냉매공급장치(20)와, 열매체유로(15)와냉매공급장치(20)의사이에배치되고비교적고온의고온매체를저장하는고온매체저장탱크(21)와, 냉매공급장치(20) 및고온매체저장탱크(21)와열 매체유로(15)의사이에배치되고, 서셉터(12)의온도를상승시킬때에냉매공급장치(20)로부터열 매체유로(15)로의냉매의공급을정지하고, 또한고온매체저장탱크(21)로부터열 매체유로(15)로고온매체를공급하는제 1 밸브군(23)을구비한다.
Abstract translation: 温度控制系统包括：传热介质供给，其构造成将第一温度的第一传热介质供给到传热介质路径中; 设置在传热介质路径和传热介质之间的至少一个传热介质存储器供应并构造成存储第二温度高于第一温度的第二传热介质; 传热介质供给控制装置，设置在所述传热介质供给与所述传热介质路径之间，以及所述传热介质储存部和所述传热介质路径之间，并且被配置为停止向所述传热介质供给所述第一传热介质 并且当加热单元产生热量时，从传热介质储存器将第二传热介质供应到传热介质路径中。
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