公开(公告)号：KR1020090093788A

公开(公告)日：2009-09-02

申请号：KR1020080134351

申请日：2008-12-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미츠오카카즈유키 ,  무라마츠마코토 ,  이와시타미츠아키

IPC: H01L21/027

CPC classification number: H01L21/316 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  G03F7/0002 ,  H01L21/67276

Abstract: A pattern forming method and method for manufacturing semiconductor device are provided to form a fine resist pattern exceeding the exposure limit by using solvent on the under layer. The catalytic layer(3) is formed on the under layer having concavo-convex according to the concavo-convex of the under layer. The flowable material is coated with on the catalytic layer and the coating film(4). The coating film is reacted with the catalytic layer to form the insolubized layer(5). The insolubizing layer remains by removing a nonreacted part of the coating film with the solvent. The catalyst of the catalytic layer is the basic catalyst. The basic catalyst is the amino group coupling agent. Before the coating film is applied. The processing enhancing adhesion between the substrate(1) and the catalytic layer is performed.

Abstract translation: 提供一种用于制造半导体器件的图案形成方法和方法，以通过在下层上使用溶剂形成超过暴露极限的精细抗蚀剂图案。 催化剂层（3）根据底层的凹凸形成在具有凹凸的下层上。 可流动材料涂覆在催化层和涂膜（4）上。 使涂膜与催化剂层反应形成不溶层（5）。 通过用溶剂除去涂膜的未反应部分而保留不溶层。 催化剂层的催化剂是碱性催化剂。 碱性催化剂是氨基偶联剂。 涂膜前。 进行提高基板（1）和催化剂层之间的粘附性的加工。