公开(公告)号：KR1020070104589A

公开(公告)日：2007-10-26

申请号：KR1020077018253

申请日：2005-12-02

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 발라슈브라마니암바이디아나탄 ,  하타무라야스노리 ,  하기하라마사아키 ,  니시무라에이이치 ,  이나자와고이치로

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  G03F7/427 ,  H01J37/32082 ,  H01J2237/3342 ,  H01L21/31138 ,  H01L22/26

Abstract: A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.

Abstract translation: 提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和在电介质层的先前等离子体蚀刻期间形成的蚀刻残留物的方 灰化方法使用涉及含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物 并从室表面除去有害的氟碳残余物。 在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。 在第二清洗步骤中使用小于20mTorr的室压力。 两步法减少了常规一步灰化过程中常见的记忆效应。 端点检测方法可用于监测灰化过程。