公开(公告)号：KR1020110016391A

公开(公告)日：2011-02-17

申请号：KR1020100061873

申请日：2010-06-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마시타코지 ,  아카사카야스시

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L29/7833 ,  H01L21/28132 ,  H01L21/28194 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/6659 ,  H01L21/02164

Abstract: PURPOSE: A semiconductor device manufacturing method is provided to prevent the deterioration of the electrode of the gate insulating layer and the layer quality of the gate insulation layer by forming the MLD-SiO2 on a substrate, the gate electrode, and the gate insulating layer. CONSTITUTION: A High-k film(2) is formed on a substrate(1). A metal layer(3) being different from the High-k film is formed on the High-k film. A reflection barrier layer(4) is formed on the metal layer. A sacrificing layer(5) is formed on the reflection barrier layer. A sacrificial layer pattern is formed by processing the sacrificial layer with the pattern having desired interval by the etching.

Abstract translation: 目的：提供一种半导体器件制造方法，用于通过在衬底，栅极电极和栅极绝缘层上形成MLD-SiO 2来防止栅极绝缘层的电极的劣化和栅极绝缘层的质量。 构成：在基板（1）上形成高k膜（2）。 在High-k膜上形成与High-k膜不同的金属层（3）。 在金属层上形成反射阻挡层（4）。 牺牲层（5）形成在反射阻挡层上。 通过用蚀刻处理具有期望间隔的图案的牺牲层来形成牺牲层图案。

公开(公告)号：KR1020100032305A

公开(公告)日：2010-03-25

申请号：KR1020090078562

申请日：2009-08-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 스가와라타쿠야 ,  야마시타코지

IPC: H01L21/31 ,  H01L21/324

CPC classification number: H01L21/31155 ,  C23C14/5833 ,  C23C14/584 ,  C23C14/5853 ,  C23C16/56

Abstract: PURPOSE: A substrate processing method is provided to introduce an introduction material with low density or thin thickness by irradiating a gas cluster ion beam. CONSTITUTION: A thin film(2) is formed on a substrate(1). A gas cluster of the introduction material is ionized and accelerated. A gas cluster ion beam(3) is irradiated to the thin film. The introduction material is introduced to the thin film. The thickness of the thin film is below 10nm. The density of the introduction material is below 10%.

Abstract translation: 目的：提供一种基板处理方法，通过照射气体簇离子束来引入具有低密度或薄的厚度的引入材料。 构成：在基板（1）上形成薄膜（2）。 导入材料的气体簇被电离并加速。 气体簇离子束（3）被照射到薄膜上。 导入材料被引入到薄膜中。 薄膜的厚度低于10nm。 导入材料的密度低于10％。