公开(公告)号：KR1020120112081A

公开(公告)日：2012-10-11

申请号：KR1020120030450

申请日：2012-03-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 엔도아츠시 ,  구로카와마사키 ,  이리우다히로키

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/318

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/67309 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PURPOSE: A depositing method for a silicon oxide film and a silicon nitride film, a film forming apparatus, and a manufacturing method for a semiconductor device are provided to prevent bending of a substrate even if the deposition number of the silicon nitride film and the silicon oxide film increases. CONSTITUTION: A ceiling plate(102) is installed on a ceiling within a process chamber(101). A manifold(103) is connected to a bottom opening portion of the process chamber. The manifold supports a bottom portion of the process chamber. A table(108) opens and closes the bottom opening portion of the manifold. The table is supported on a rotary shaft(110) passing through a cover portion(109). [Reference numerals] (114a) Silicon source gas supply source; (114b) Silicon oxide source gas supply source; (114c) Source gas supply source containing a nitration agent; (114d) Source gas supply source containing an oxidizing agent; (114e) Source gas supply source containing boron; (120) Inert gas source gas supply source; (132) Exhaust mechanism; (150) Controller; (151) User interface; (152) Memory portion

Abstract translation: 目的：提供一种用于氧化硅膜和氮化硅膜的沉积方法，成膜设备和用于半导体器件的制造方法，以防止基板的弯曲，即使氮化硅膜和硅的沉积次数 氧化膜增加。 构成：顶板（102）安装在处理室（101）内的天花板上。 歧管（103）连接到处理室的底部开口部分。 歧管支撑处理室的底部。 台（108）打开和关闭歧管的底部开口部分。 桌子被支撑在穿过盖部分（109）的旋转轴（110）上。 （114a）硅源气体供给源; （114b）氧化硅源气体供给源; （114c）含有硝化剂的源气源; （114d）含有氧化剂的源气体供给源; （114e）含硼的源气源; （120）惰性气体源气源; （132）排气机构; （150）控制器; （151）用户界面; （152）存储器部分

公开(公告)号：KR1020120112082A

公开(公告)日：2012-10-11

申请号：KR1020120030451

申请日：2012-03-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 엔도아츠시 ,  구로카와마사키 ,  이리우다히로키

IPC: H01L21/205 ,  H01L21/22

CPC classification number: H01L21/0217 ,  C23C16/45563 ,  C23C16/4583 ,  H01L21/02164 ,  H01L21/02271

Abstract: PURPOSE: A vertical batch-type film depositing apparatus is provided to control the difference between a deposition amount to a semiconductor wafer piled on an upper end of a wafer boat and a deposition amount to the semiconductor wafer piled on a bottom end of the wafer boat. CONSTITUTION: A process chamber(101) integrally performs deposition for a plurality of processed objects(W). A heater(131) heats the plurality of processed objects received to the process chamber. An exhaust device(130) exhausts the inside of the process chamber. A receiving container(102) receives the process chamber. A gas supply device(120) supplies process gas to the inside of the receiving container. [Reference numerals] (126a) Silicon source gas supply source; (126b) Source gas supply source containing an oxidizing agent; (126c) Source gas supply source containing a nitration agent; (126d) Source gas supply source containing boron; (126e) Inert gas source gas supply source; (130) Exhaust mechanism; (150) Controller; (151) User interface; (152) Memory portion

Abstract translation: 目的：提供一种垂直分批式成膜装置，用于控制堆积在晶片舟皿上端的半导体晶片的沉积量与堆叠在晶片舟皿底端的半导体晶片的沉积量之间的差异 。 构成：处理室（101）整体地执行多个处理物体（W）的沉积。 加热器（131）将接收到处理室的多个处理对象加热。 排气装置（130）排出处理室的内部。 接收容器（102）接收处理室。 气体供给装置（120）向处理容器的内部供给处理气体。 （126a）硅源气体供给源; （126b）含有氧化剂的源气体供给源; （126c）含有硝化剂的源气体供给源; （126d）含硼的源气源; （126e）惰性气体源气体供应源; （130）排气机构 （150）控制器; （151）用户界面; （152）存储器部分

公开(公告)号：KR101501038B1

公开(公告)日：2015-03-10

申请号：KR1020120030450

申请日：2012-03-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 엔도아츠시 ,  구로카와마사키 ,  이리우다히로키

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/318

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/67309 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: (과제) 실리콘 산화물막과 실리콘 질화물막과의 적층수를 늘려도, 이들 막을 적층한 적층 구조가 형성되는 기판의 휘어짐의 증대를 억제하는 것이 가능한 실리콘 산화물막 및 실리콘 질화물막의 적층 방법을 제공하는 것이다.
(해결 수단) 기판(W) 상에, 실리콘 산화물막(1-1)과 실리콘 질화물막(2-1)을 적층하는 실리콘 산화물막(1-1) 및 실리콘 질화물막(2-1)의 적층 방법으로서, 실리콘 질화물막(2)을 성막하는 가스 중에, 붕소를 첨가한다.

公开(公告)号：KR101474758B1

公开(公告)日：2014-12-19

申请号：KR1020120030451

申请日：2012-03-26

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 엔도아츠시 ,  구로카와마사키 ,  이리우다히로키

IPC: H01L21/205 ,  H01L21/22

CPC classification number: H01L21/0217 ,  C23C16/45563 ,  C23C16/4583 ,  H01L21/02164 ,  H01L21/02271

Abstract: (과제) 처리실내에로(爐) 내온도경사를설정하지않아도, 종형피(被)처리체보트의상단에쌓인실리콘웨이퍼로의성막량과, 하단에쌓인피처리체로의성막량과의불균일을억제하는것이가능한종형배치식성막장치를제공하는것. (해결수단) 복수의실리콘웨이퍼(W)에대해일괄하여성막을행하는처리실(101)과, 실리콘웨이퍼(W)를가열하는가열장치(131)와, 처리실(101)의내부를배기하는배기기구(130)와, 처리실(101)을수용하는수용용기(102)와, 수용용기(102)의내부에, 처리에사용되는가스를공급하는가스공급기구(120)와, 처리실(101)의측벽에설치된복수의가스도입공(101a)을구비하고, 처리에사용되는가스를, 복수의가스도입공(101a)을개재하여, 처리실(101)의내부에복수의실리콘웨이퍼(W)의처리면에대하여평행한흐름으로공급하면서, 처리실(101) 내에로 내온도경사를설정하지않고, 복수의실리콘웨이퍼(W)에대해일괄하여성막을행한다.