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公开(公告)号:KR101377194B1
公开(公告)日:2014-03-25
申请号:KR1020100058177
申请日:2010-06-18
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: B08B3/10 , H01L21/67057 , H01L21/67751 , Y10S134/902
Abstract: 본발명은작업처리량의향상에공헌하며, 대기분위기에패턴을노출시키지않고초임계유체에의한처리를행하는것이가능한기판처리장치및 기판처리방법을제공한다. 기판처리장치의세정조(21)는, 기판(W)을수용하며, 세정액을통류시켜그 기판(W)을세정하고, 처리용기(22)는, 이세정조(21)를수용하며, 그기판(W)에대하여초임계유체에의한처리를행한다.
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公开(公告)号:KR1020110002419A
公开(公告)日:2011-01-07
申请号:KR1020100058177
申请日:2010-06-18
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: B08B3/10 , H01L21/67057 , H01L21/67751 , Y10S134/902
Abstract: PURPOSE: A substrate processing apparatus, and a substrate processing method thereof are provided to prevent the boundary formation and the pattern collapse of the substrate surface by implementing the process using supercritical fluid. CONSTITUTION: A cleaning bath(21) washes the substrate(W). A treatment basin(22) implements the processing by the supercritical fluid for the substrate. A fluid supplying unit supplies the supercritical fluid to the cleaning bath. A fluid discharging unit discharges the fluid in the cleaning bath. A wafer returning apparatus(3) maintains the absorbed substrate.
Abstract translation: 目的:通过实施使用超临界流体的方法,提供基板处理装置及其基板处理方法,以防止基板表面的边界形成和图案塌陷。 构成:清洗浴(21)洗涤基材(W)。 处理池(22)通过超临界流体进行基底处理。 流体供应单元将超临界流体供应到清洗槽。 流体排放单元排出清洗槽中的流体。 晶片返回装置(3)保持被吸收的基板。
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