기판 처리 장치 및 기판 처리 방법
    1.
    发明授权
    기판 처리 장치 및 기판 처리 방법 有权
    基板处理装置及基板处理方法

    公开(公告)号:KR101808886B1

    公开(公告)日:2017-12-13

    申请号:KR1020130135246

    申请日:2013-11-08

    Abstract: 본발명은, 기판을처리하는처리액의온도를양호하게관리할수 있도록하는것을목적으로한다. 기판(2)을정해진온도로가열한처리액으로처리하는기판처리장치(1)에있어서, 상기처리액을저류하는용기[저류조(8), 가열조(22)]와, 상기용기에형성된가열벽(33)에히터(34)를마련하고, 상기히터(34)로상기처리액을상기가열벽(33)을통해가열하는처리액가열수단(6)과, 상기가열벽(33)에마련하며, 상기가열벽(33)의온도를측정하는제어용온도센서(36)와, 상기제어용온도센서(36)로측정한온도에기초하여상기처리액가열수단(6)을제어하는제어수단(7)을갖고, 상기제어수단(7)은, 상기제어용온도센서(36)로측정한상기가열벽(33)의온도에기초하여상기처리액가열수단(6)을제어하도록하였다.

    Abstract translation: 本发明的目的是使得可以控制用于处理基板井的处理溶液的温度。 一种基板处理装置(1),其用于将处理液加热到规定的温度来处理基板(2),该基板处理装置具有收纳处理液的容器(收容容器(8),加热容器(22) 一种处理液体加热装置(6),其在壁(33)上设有加热器(34)并通过加热壁(33)用加热器(34)加热处理液体, 和用于根据由控制温度传感器(36)测量的温度控制处理液体加热装置(6)的控制装置(7) 并且控制装置(7)基于由控制温度传感器(36)测量的加热壁(33)的温度来控制处理液体加热装置(6)。

    기판 처리 장치 및 기판 처리 방법
    2.
    发明公开
    기판 처리 장치 및 기판 처리 방법 审中-实审
    基板处理装置和基板处理方法

    公开(公告)号:KR1020140065334A

    公开(公告)日:2014-05-29

    申请号:KR1020130135246

    申请日:2013-11-08

    CPC classification number: H01L21/67086 H01L21/67248

    Abstract: The purpose of the present invention is to manage the temperature of a processing liquid for processing a substrate well. A substrate processing device (1) which processes a substrate (2) with a processing liquid which is heated at a predetermined temperature comprises; a container (retention container (8), heating container (22)) which retains the processing liquid; a heater (34) on a heating wall (33) formed on the container; a processing liquid heating unit (6) which heats the processing liquid with the heater (34) through the heating wall (33); a temperature sensor (36) for control which is formed on the heating wall (33) and measures the temperature of the heating wall (33); and a control unit (7) which controls the processing liquid heating unit (6) based on the temperature which is measured by the temperature sensor (36) for control. The control unit (7) controls the processing liquid heating unit (6) based on the temperature of the heating wall (33) which is measured by the temperature sensor (36) for control.

    Abstract translation: 本发明的目的是管理用于处理衬底的处理液的温度。 用在预定温度下加热的处理液处理基板(2)的基板处理装置(1)包括: 保持处理液体的容器(保持容器(8),加热容器(22)); 形成在容器上的加热壁(33)上的加热器(34) 处理液体加热单元(6),其通过加热壁(33)与加热器(34)加热处理液体; 用于控制的温度传感器(36),其形成在加热壁(33)上并测量加热壁(33)的温度; 以及控制单元(7),其基于由用于控制的温度传感器(36)测量的温度来控制处理液体加热单元(6)。 控制单元(7)基于由用于控制的温度传感器(36)测量的加热壁(33)的温度控制处理液体加热单元(6)。

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