公开(公告)号：KR1020110032359A

公开(公告)日：2011-03-30

申请号：KR1020090089801

申请日：2009-09-22

Applicant: 삼성모바일디스플레이주식회사

Inventor： 이상조 ,  박경호

IPC: H01L21/324 ,  H01L21/02

CPC classification number: C30B1/023 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02675 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: PURPOSE: A laser crystallization apparatus is provided to stably crystallize amorphous silicon by preventing a stain on the surface of a silicon layer. CONSTITUTION: In a laser crystallization apparatus, a partition wall(14) compartmentalizes the inside of a box body into a first work room and a second work room. The partition wall has a pass hole connecting the first work room and the second work room. A gas inflow port(15) is formed on one side of the first work room. A plurality of flow control panels are formed on the second work room and are adjacent to the partition wall. Nitrogen gas is flowed into the first work room through the gas inflow port.

Abstract translation: 目的：提供一种激光结晶装置，通过防止硅层表面的污点来稳定地结晶非晶硅。 构成：在激光结晶装置中，分隔壁（14）将盒体的内部分隔成第一工作室和第二工作室。 分隔壁具有连接第一工作室和第二工作室的通孔。 气体流入口（15）形成在第一工作室的一侧。 多个流量控制面板形成在第二工作室上并与分隔壁相邻。 氮气通过气体流入口流入第一工作室。