Abstract:
PURPOSE: A laser beam irradiating device and an organic light emitting display device using the same are provided to improve the intensity and adhesion of the organic light emitting display device by increasing the temperature distribution uniformity of a frit unit. CONSTITUTION: A first substrate and a second substrate are sealed by irradiating a laser beam(160) to a sealing unit(140) between the first and second substrates. The center of the laser beam has a first beam profile(161) to gradually increase beam intensity toward the center of the laser beam. A plurality of second beam profiles(162a,162b,162d) are mutually symmetrical around the first beam profile. The center of the second beam profile is separated from the center of the first beam profile with a preset space. The maximum beam intensity of the second beam profile is larger than the maximum beam intensity of the first beam profile.
Abstract:
PURPOSE: An organic light emitting display apparatus is provided to improve shock resistance by maximizing the size ratio of a sealant thickness and the position and shape of a pillar. CONSTITUTION: In an organic light emitting display apparatus, a display unit(200) arranged on a substrate(100). A sealing substrate(300) is arranged on the display unit. A sealant(410) welds the substrate and the sealing substrate. A pillar is included in the sealant. The thickness of the sealant is larger than the size of the pillar.
Abstract:
PURPOSE: A method for manufacturing an organic light emitting display is provided to shorten a process time by performing a sintering process using a laser. CONSTITUTION: A buffer layer(111) is formed in a deposition apparatus(110). A semiconductor layer(112) including an active layer(112a) and a source/drain region(112b) is formed in the buffer layer. A gate isolation layer(113) is formed in the buffer layer including the semiconductor layer. The gate electrode(114) is formed in the gate isolation layer. An interlayer dielectric layer(115) is formed in the gate isolation layer. Source / drain electrodes(116a, 116b) are formed in the predetermined domain of the interlayer dielectric layer.