公开(公告)号：KR100735470B1

公开(公告)日：2007-07-03

申请号：KR1020060045112

申请日：2006-05-19

Applicant: 삼성전기주식회사

Inventor： 조제희 ,  손철수 ,  김동유 ,  홍현기 ,  김석순

IPC: H01L33/38 ,  H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0095 ,  H01L33/42

Abstract: A method for manufacturing a nitride-based semiconductor light emitting device is provided to make the nitride-based semiconductor light emitting device have a plurality of photonic crystal arrays by using photophysical mass transport of an azobenzene-functionalized polymer. One layer is selected from a group consisting of an n-type semiconductor layer(20), a p-type semiconductor layer(40), an n-electrode(50), and a p-electrode(60), as a base layer and then an azobenzene-functionalized polymer film(120) is formed on the base layer. An interference laser beam is irradiated on the azobenzene-functionalized polymer film to form surface relief gratings of fine patterns according to photophysical mass transport. A photonic crystal layer(200) made of a metal oxide material is formed on a gap between the surface relief gratings of the azobenzene-functionalized polymer film.

Abstract translation: 提供了一种用于制造氮化物基半导体发光器件的方法，以通过使用偶氮苯官能化聚合物的光物理质量传输来使氮化物基半导体发光器件具有多个光子晶体阵列。 一层选自由n型半导体层（20），p型半导体层（40），n电极（50）和p电极（60）组成的组中，作为基底层 然后在基层上形成偶氮苯官能化聚合物膜（120）。 将干涉激光束照射到偶氮苯官能化聚合物膜上，以根据光物理质量传输形成精细图案的表面浮雕格栅。 在偶氮苯官能化聚合物膜的表面起伏光栅之间的间隙上形成由金属氧化物材料制成的光子晶体层（200）。

公开(公告)号：KR100764403B1

公开(公告)日：2007-10-05

申请号：KR1020060042385

申请日：2006-05-11

Applicant: 삼성전기주식회사

Inventor： 조제희 ,  손철수 ,  김동유 ,  홍현기 ,  김석순

IPC: H01L33/00 ,  B01H01

CPC classification number: G03F7/36 ,  G03F7/004 ,  H01L33/22 ,  H01L33/42

Abstract: A method for manufacturing a nitride-based semiconductor light emitting device is provided to reproductively and repeatedly form micro patterns of up to 1 mum with a simple and easy method. At least one selected from the group consisting of an n-type semiconductor layer(20), an active layer(30), a p-type semiconductor layer(40), an n-electrode(50) and a p-electrode(60) is selected as a layer to be etched, and an azobenzene-functionalized polymer film(120) is formed on the layer. The azobenzene-functionalized polymer film is irradiated by laser beam to form a recessed surface of micro pattern. The layer is etched by using the azobenzene-functionalized polymer film as an etch mask to form an uneven plane of photonic crystal on the layer, and then the azobenzene-functionalized polymer film is removed.

Abstract translation: 提供了一种用于制造氮化物基半导体发光器件的方法，以简单且容易的方法再生和重复地形成高达1um的微图案。 选自由n型半导体层（20），有源层（30），p型半导体层（40），n电极（50）和p电极（60）组成的组中的至少一种 ）作为被蚀刻层，在该层上形成偶氮苯官能化聚合物膜（120）。 通过激光束照射偶氮苯官能化聚合物膜以形成微图形的凹陷表面。 通过使用偶氮苯官能化的聚合物膜作为蚀刻掩模来蚀刻该层，以在该层上形成光子晶体的不平坦平面，然后除去偶氮苯官能化的聚合物膜。