公开(公告)号：KR1020090065065A

公开(公告)日：2009-06-22

申请号：KR1020070132497

申请日：2007-12-17

Applicant: 삼성전기주식회사

Inventor： 전종열

IPC: H03H3/02 ,  H01L21/027 ,  H03H9/19

CPC classification number: G03F1/50 ,  H03H9/19

Abstract: A manufacturing method of a blank for crystal oscillator is provided to secure accuracy and a stable performance of a crystal blank by performing a wafer level process using an etch method for dividing the crystal blank. A photoresist layer forming process is performed to form a photoresist layer on an external surface of a crystal wafer(S112). A developing process using a photo mask is performed to develop a plurality of blank patterns on an upper surface of the crystal wafer on which the photoresist layer is formed. A blank separation process is performed to separate a plurality of blanks from each other according to the blank patterns. A removal process is performed to remove the photoresist layer.

Abstract translation: 提供一种用于晶体振荡器的坯件的制造方法，以通过使用用于分割晶体坯料的蚀刻方法进行晶片级处理来确保晶体坯料的精度和稳定的性能。 进行光致抗蚀剂层形成工艺以在晶片的外表面上形成光致抗蚀剂层（S112）。 进行使用光掩模的显影处理，以在其上形成有光致抗蚀剂层的晶体晶片的上表面上形成多个空白图案。 执行空白分离处理以根据空白图案将多个坯料彼此分离。 进行去除工艺以除去光致抗蚀剂层。

公开(公告)号：KR100992582B1

公开(公告)日：2010-11-05

申请号：KR1020090008717

申请日：2009-02-04

Applicant: 삼성전기주식회사

Inventor： 김태현 ,  김태훈 ,  곽윤표 ,  박성근 ,  전종열

IPC: H01L23/28 ,  H01L21/56 ,  H01L23/02

CPC classification number: H01L23/10 ,  H01L23/055 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/16152 ,  H01L2924/00

Abstract: 본 발명은 웨이퍼 레벨 패키지 및 이의 제조 방법을 개시한다. 상기 웨이퍼 레벨 패키지는 제 1 영역과 상기 제 1 영역의 주변을 따라 홈이 형성된 제 2 영역을 포함하는 제 1 기판; 상기 제 1 영역상에 배치된 반도체 소자; 상기 홈에 배치된 제 1 밀봉부재; 상기 제 1 영역과 대응된 캐비티를 형성하기 위해 상기 제 2 영역과 대응되어 돌출부를 구비하는 제 2 기판; 및 상기 돌출부상에 배치되며 상기 제 1 밀봉부재와 본딩되어 상기 제 1 기판과 상기 제 2 기판을 서로 합착하는 제 2 밀봉부재를 포함하여, 밀봉부재가 밀봉영역 이외의 영역으로 흘러가는 것을 방지할 수 있다.
웨이퍼 레벨 패키지, 홈, 본딩, 용융온도, 반도체 소자

公开(公告)号：KR100956235B1

公开(公告)日：2010-05-04

申请号：KR1020080057477

申请日：2008-06-18

Applicant: 삼성전기주식회사

Inventor： 전종열

IPC: H03H3/08

Abstract: 본 발명은 수정진동자 제조방법에 관한 것으로, 수정웨이퍼를 마련하는 단계; 상기 수정웨이퍼의 상하면 전부에 금속층을 증착하는 단계; 상기 금속층에 복수개의 금속 전극 패턴을 형성하기 위한 제1 포토레지스트 패턴을 형성하는 단계; 상기 제1 포토레지스트 패턴을 식각 마스크로 하여 상기 금속층을 식각하여 복수개의 금속 전극을 형성하는 단계; 상기 복수개의 금속 전극을 형성하고 남아있는 제1 포토레지스트 막을 제거한 후, 상기 복수개의 금속 전극 및 수정웨이퍼의 상하면에 복수개의 수정진동자를 분리하기 위한 제2 포토레지스트 패턴을 형성하는 단계; 및 상기 제2 포토레지스트 패턴을 마스크로 하여 상기 수정웨이퍼를 분리하는 단계;를 포함한다.
수정 블랭크(Crystal blank), 수정진동자

公开(公告)号：KR100878395B1

公开(公告)日：2009-01-13

申请号：KR1020070120330

申请日：2007-11-23

Applicant: 삼성전기주식회사

Inventor： 전종열

IPC: H01L21/60 ,  H03H3/02 ,  H01L23/02

Abstract: A method for fabricating crystal device is provided to realize miniaturization and thin shaping of the quartz element by adhesive strength between the wafer of bottom substrate and the cap wafer of top of the substrate and securing the vibration space confidentiality of a quartz element. A method for fabricating crystal device is comprised of steps: forming a first metal layer(115a), a second metal layer(115b) on the substrate wafer having a plurality of element areas; forming a plurality of bumps on the second metal layer; making the second metal layer patterned along with the electrode pattern; making the end of the quartz element having the surface electrode contacted with the bump by using a conductive resin adhesive; forming the first and the second metal layer by making the first metal layer patterned along with the electrode pattern(115);making the cap wafer(140) including the cavity opened to the lower part in the upper side of the substrate wafer in which quartz element is mounted welded.

Abstract translation: 提供了一种制造晶体器件的方法，以通过底部基片晶片与基片顶部的盖晶片之间的粘合强度实现石英元件的小型化和薄成形，并确保了石英元件的振动空间机密性。 制造晶体器件的方法包括以下步骤：在具有多个元件区域的衬底晶片上形成第一金属层（115a），第二金属层（115b） 在所述第二金属层上形成多个凸块; 使第二金属层与电极图案一起构图; 通过使用导电树脂粘合剂使具有表面电极的石英元件的端部与凸块接触; 通过使所述第一金属层与所述电极图案一起被图案化而形成所述第一金属层和所述第二金属层;使所述第一金属层和所述第二金属层与所述电极图案一起被图案化; 元件安装焊接。

公开(公告)号：KR1020100089461A

公开(公告)日：2010-08-12

申请号：KR1020090008717

申请日：2009-02-04

Applicant: 삼성전기주식회사

Inventor： 김태현 ,  김태훈 ,  곽윤표 ,  박성근 ,  전종열

IPC: H01L23/28 ,  H01L21/56 ,  H01L23/02

CPC classification number: H01L23/10 ,  H01L23/055 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/16152 ,  H01L2924/00

Abstract: PURPOSE: A wafer level package and a method manufacturing the same are provided to prevent the sealing member from flowing to the domain except the sealing area by forming a sealing member on the groove after forming a groove on silver sealing area. CONSTITUTION: A first substrate(110) comprises a first area(110b) and also comprises a second area having grooves along the first area. A semiconductor device(115) is arranged on the first area. A first sealing member(130) is arranged in the groove. A second substrate(120) corresponds to the second area and comprises a protrusion. A second sealing member(140) is located on the protrusion. The second sealing member is bonding with the first sealing member to mutually make the first substrate and the second substrate adhered to each other.

Abstract translation: 目的：提供晶片级封装及其制造方法，以在密封区域上形成凹槽之后，通过在凹槽上形成密封构件来防止密封构件流过除密封区域之外的区域。 构成：第一衬底（110）包括第一区域（110b），并且还包括具有沿着第一区域的凹槽的第二区域。 半导体器件（115）布置在第一区域上。 第一密封构件（130）布置在凹槽中。 第二基板（120）对应于第二区域并且包括突起。 第二密封构件（140）位于突出部上。 第二密封构件与第一密封构件接合，以使第一基板和第二基板彼此粘合。

公开(公告)号：KR1020090131546A

公开(公告)日：2009-12-29

申请号：KR1020080057477

申请日：2008-06-18

Applicant: 삼성전기주식회사

Inventor： 전종열

IPC: H03H3/08

CPC classification number: H03H3/02 ,  H01L41/09 ,  H03H9/1021 ,  H03H9/19

Abstract: PURPOSE: A method for manufacturing a crystal vibrator is provided to secure a stable performance of a product by using a wafer level process with a chemical etching mode or a laser cutting mode. CONSTITUTION: A crystal wafer is prepared. A metal layer is deposited to a top surface and a bottom surface of the crystal wafer. A first photoresist pattern for forming a plurality of metal electrode patterns is formed to the metal layer. A plurality of metal electrodes(130) is formed by etching the metal layer after using the first photoresist pattern as an etch mask. A second photoresist pattern for separating a plurality of crystal vibrators(200) is formed to the top surface and the bottom surface of the crystal wafer and a plurality of metal electrodes. The crystal wafer is separated by using the second photoresist pattern as a mask.

Abstract translation: 目的：提供一种用于制造晶体振子的方法，以通过使用具有化学蚀刻模式或激光切割模式的晶片级处理来确保产品的稳定性能。 构成：准备晶体晶片。 金属层沉积到晶体晶片的顶表面和底表面。 用于形成多个金属电极图案的第一光致抗蚀剂图案形成在金属层上。 在使用第一光致抗蚀剂图案作为蚀刻掩模之后，通过蚀刻金属层形成多个金属电极（130）。 用于分离多个晶体振子（200）的第二光致抗蚀剂图案形成在晶片的顶表面和底表面以及多个金属电极上。 通过使用第二光致抗蚀剂图案作为掩模来分离晶体晶片。

公开(公告)号：KR100878410B1

公开(公告)日：2009-01-13

申请号：KR1020070069563

申请日：2007-07-11

Applicant: 삼성전기주식회사

Inventor： 박장호 ,  김태훈 ,  전종열

IPC: H03H3/02

CPC classification number: H03H9/1021 ,  H01L21/50 ,  H01L23/10 ,  H01L24/94 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/16235 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49007 ,  Y10T29/4908 ,  Y10T29/49147 ,  Y10T29/49155

Abstract: The method for preparing crystal oscillator is provided to improve the process read time and process efficiency and facilitate the mass production of product. The engaging process between the cap wafer(120) and the package wafer(110) are performed. The package wafer including crystal oscillator(130) is arranged in the bottom side of the cap wafer. The cap wafer including cavity (C) is arranged in the upper of the package wafer. The lower part junction of the cap wafer is in opposite to the top junction of the package wafer. The cap wafer is laminated on the package wafer. The crystal oscillator is arranged in the space formed between the wafer package and the cavity of the cap wafer.

Abstract translation: 提供了制备晶体振荡器的方法，以提高工艺读取时间和工艺效率，并促进产品的批量生产。 执行盖晶片（120）和封装晶片（110）之间的接合过程。 包括晶体振荡器（130）的封装晶片布置在盖晶片的底侧。 包括空腔（C）的盖晶片布置在封装晶片的上部。 盖晶片的下部接合部与封装晶片的顶部接合部相对。 盖晶片被层压在封装晶片上。 晶体振荡器布置在晶片封装和盖晶片的空腔之间形成的空间中。

公开(公告)号：KR1020040089809A

公开(公告)日：2004-10-22

申请号：KR1020030023619

申请日：2003-04-15

Applicant: 삼성전기주식회사

Inventor： 전종열 ,  김종태

IPC: H03B5/32

Abstract: PURPOSE: A single package type crystal oscillator is provided to miniaturize a structure of a ceramic package by installing an IC and a crystal part within an inner region of a ceramic package. CONSTITUTION: A single package type crystal oscillator includes a first ceramic layer, a second ceramic layer, a third ceramic layer, and a lid part. An IC(2) is loaded on an upper surface of the first ceramic layer(10). A lower end of the second ceramic layer(20) is connected to an upper edge of the first ceramic layer in order to form a loading region. A lower end of the third ceramic layer(30) is connected to an upper edge of the second ceramic layer in order to form a mounting region. A lid part(40) is used for covering an upper part of the third ceramic layer.

Abstract translation: 目的：通过在陶瓷封装的内部区域内安装IC和晶体部件，提供单封装型晶体振荡器以使陶瓷封装的结构小型化。 构成：单封装型晶体振荡器包括第一陶瓷层，第二陶瓷层，第三陶瓷层和盖部。 IC（2）装载在第一陶瓷层（10）的上表面上。 第二陶瓷层（20）的下端连接到第一陶瓷层的上边缘以形成负载区域。 为了形成安装区域，第三陶瓷层（30）的下端连接到第二陶瓷层的上边缘。 盖部分（40）用于覆盖第三陶瓷层的上部。