公开(公告)号：KR100818452B1

公开(公告)日：2008-04-01

申请号：KR1020060106792

申请日：2006-10-31

Applicant: 삼성전기주식회사

Inventor： 최락준 ,  쿠레쇼브브라디미르 ,  오방원 ,  박길한 ,  박희석 ,  박성은 ,  박영민 ,  김민호

IPC: H01L33/32

CPC classification number: H01L33/007 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262

Abstract: A method for forming a III group nitride semiconductor thin film and a manufacturing a nitride semiconductor device using the same are provided to ensure a continuous nitride growing process by performing a process of inducing a lateral growing mode in a chamber in which nitride is grown. A first nitride single crystal layer is grown on a substrate(21), and then an etching gas is applied on the upper surface(22a) of the first nitride single crystal layer so that plural pits(P) with an inclined surface of nonpolar crystal are formed in a high potential density region. A second nitride single crystal layer is formed on the first nitride single crystal layer by in-situ so that the pits are maintained as voids(V). The step of forming the second nitride single crystal layer includes growing an intermediate layer on the first nitride single crystal layer, and growing the second nitride single crystal layer on the intermediate layer.

Abstract translation: 提供了一种用于形成III族氮化物半导体薄膜的方法和使用该氮化物半导体薄膜的氮化物半导体器件的制造方法，以通过在生长氮化物的室中进行诱导侧向生长模式的过程来确保连续的氮化物生长过程。 在基板（21）上生长第一氮化物单晶层，然后在第一氮化物单晶层的上表面（22a）上施加蚀刻气体，使得具有非极性晶体的倾斜表面的多个凹坑（P） 形成在高电位密度区域。 第二氮化物单晶层通过原位形成在第一氮化物单晶层上，使得凹坑保持为空隙（V）。 形成第二氮化物单晶层的步骤包括在第一氮化物单晶层上生长中间层，并在中间层上生长第二氮化物单晶层。