Abstract:
An image sensor for reducing crosstalk is provided to reduce the crosstalk by using a first isolation region as an electrical crosstalk barrier and an optical crosstalk barrier. An SOI(Silicon On Insulator) substrate(100) includes a lower silicon substrate(101a), a buried insulating layer(101b) formed on the lower silicon substrate, and a silicon semiconductor layer(101c) formed on the buried insulating layer. A first isolation region(121) comes in contact with the buried insulating layer within the silicon semiconductor layer. A plurality of photoelectric conversion elements are electrically separated from each other by using the first isolation region. The first isolation region includes a trench formed within the silicon semiconductor layer, a p-type junction region formed along a profile of the trench, and a burial material for filling the trench. Further, the image sensor contains a second isolation region of which a depth is thinner than that of the first isolation region and reading element and floating diffusion region separated from the photoelectric conversion elements.
Abstract:
An image sensor and its manufacturing method are provided to decrease an aspect ratio of the image sensor by integrating a color filter with a micro lens which removes a color filter layer and an overcoating layer. A light receiving element(115) is formed in a semiconductor substrate(100), an interlayer dielectrics(125,135,145) are formed on the substrate. Color filter lenses(180R,180G,180B) are formed on the interlayer dielectrics. The color filter lenses include a red filter lens, a green filter lens, and a blue filter lens. The color filter lens is formed in a stacked structure of different inorganic layers. The inorganic layer includes an oxide layer and a nitride layer.
Abstract:
광유도구조물이제공될수 있다. 이를위해서, 상기광 유도구조물은반도체기판상에위치하는제 1 내지 3 절연막들에한정될수 있다. 상기광 유도구조물은제 1 내지 3 절연막들에하나또는다수개의식각종료점을대응시켜서제 1 내지 3 절연막들에배치될수 있다. 이를통해서, 상기광 유도구조물은반도체기판으로부터이격해서제 1 내지 3 절연막들에배치될수 있다. 상기광 유도구조물은이미지센서에포함될수 있다. 상기이미지센서는프로세서베이스드시스템에배치될수 있다.
Abstract:
PURPOSE: An image sensor including an optical inducing structure and a processor based system including the same are provided to minimize plasma damage which is applied to a semiconductor substrate by forming the optical inducing structure on a reflection barrier layer. CONSTITUTION: A conductive pattern(16) which is arranged on a semiconductor substrate(4) is formed. A first insulating layer(38), a second insulating layer(43), and a third insulating layer(46) are successively formed on the conductive pattern and the semiconductor substrate. An optical inducing structure is formed in the side of the conductive pattern. A photo diode is arranged on the semiconductor substrate. A reflection barrier layer(34) is located between the semiconductor substrate and the first insulating layer. One or a plurality of wires(58) is arranged on the third insulating layer.