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    이미지 센서 제조 방법 및 이에 따라 제조된 이미지 센서
    1.
    发明公开
    이미지 센서 제조 방법 및 이에 따라 제조된 이미지 센서 失效
    用于制作图像传感器和图像传感器的方法

    公开(公告)号：KR1020070075160A

    公开(公告)日：2007-07-18

    申请号：KR1020060003604

    申请日：2006-01-12

    Applicant: 삼성전자주식회사

    Inventor： 송재호 ,  박찬 ,  박영훈 ,  정상일 ,  박거성 ,  홍종욱 ,  김은수 ,  김푸라 ,  이원정 ,  성대철 ,  박원제 ,  박진형

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

    Abstract: A method for fabricating an image sensor is provided to reduce a potential barrier generated by an impurity density difference between regions in a transfer gate pattern by forming an image sensor after impurities of a first conductivity type are implanted into a transfer gate pattern. A gate insulation layer and a gate conductive layer doped with impurities of a first conductivity type are formed on a semiconductor substrate(102). The gate insulation layer and the gate conductive layer are patterned to form a transfer gate pattern. A photodiode of the first conductivity type is formed at one side of the transfer gate pattern and a photodiode of a second conductivity type is formed on the photodiode of the first conductivity type. A floating diffusion region of the first conductivity type is formed in the substrate at the other side of the transfer gate pattern to complete a transfer gate electrode. In forming a gate conductive layer, the impurities of the first conductivity type can be doped at a dosage that can invert the impurities in the photodiode of the second conductivity type.

    Abstract translation: 提供一种用于制造图像传感器的方法，用于通过在将第一导电类型的杂质注入传输栅极图案之后形成图像传感器来减小由传输栅极图案中的区域之间的杂质浓度差产生的势垒。 在半导体衬底（102）上形成栅极绝缘层和掺杂有第一导电类型的杂质的栅极导电层。 栅极绝缘层和栅极导电层被图案化以形成传输栅极图案。 第一导电类型的光电二极管形成在传输栅极图案的一侧，并且在第一导电类型的光电二极管上形成第二导电类型的光电二极管。 在传输栅极图案的另一侧的基板中形成第一导电类型的浮动扩散区域，以完成传输栅电极。 在形成栅极导电层时，可以以能够反转第二导电类型的光电二极管中的杂质的剂量来掺杂第一导电类型的杂质。

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