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公开(公告)号：KR1020150055887A
公开(公告)日：2015-05-22
申请号：KR1020130138429
申请日：2013-11-14
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14685 , H01L27/14607 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14645 , H01L27/14687 , H04N5/374 , H04N5/378
Abstract: 이미지센서및 이를제조하는방법을제공한다. 이미지센서는, 광전변환부들을포함하며, 수광영역및 차광영역을포함하는반도체층과, 반도체층일면상에, 차광영역에대응되는위치에배치되는광차단막과, 광차단막및 반도체층상에배치되며, 광차단막에의해발생되는단차에서적어도일부식각된컬러필터들과, 컬러필터들상에배치되는마이크로렌즈들을포함한다.
Abstract translation: 提供图像传感器及其制造方法。 图像传感器包括：半导体层，包括光电转换部分，受光区域和遮光区域;遮光层，形成在与半导体层一侧上的遮光区域对应的位置;滤色器 它们布置在遮光层和半导体层上，并且在由遮光层产生的台阶上被部分地蚀刻，并且布置在滤色器上的微透镜。
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公开(公告)号：KR100697290B1
公开(公告)日：2007-03-20
申请号：KR1020050083797
申请日：2005-09-08
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14683 , H01L27/14603 , H01L27/14643
Abstract: 이미지 센서의 형성 방법을 제공한다. 이 방법에서, 고전압 영역에서 두꺼운 게이트 절연막이 먼저 형성되고, 상기 두꺼운 게이트 절연막이 게이트 전극막으로 덮인 상태에서 저전압 영역에서 질소를 포함하는 분위기하에서 얇은 게이트 절연막이 형성되므로, 질소가 확산하여 상기 두꺼운 게이트 절연막 내부로 침투되는 것을 방지할 수 있다. 이로써, 계면 트랩의 증가 및 이에 따른 플리커 노이즈등의 문제를 방지할 수 있다.
이미지 센서-
公开(公告)号：KR1020070028973A
公开(公告)日：2007-03-13
申请号：KR1020050083797
申请日：2005-09-08
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14683 , H01L27/14603 , H01L27/14643
Abstract: A method for forming an image sensor is provided to prevent the generation of flicker noises by restraining nitrogen from penetrating into a gate insulating layer using an enhanced dual gate insulating layer structure with a second gate insulating layer formed under nitrogen gas atmosphere. A first region and a second region are defined on a semiconductor substrate(1). A first gate electrode layer(9) is formed on the first region of the substrate via a first gate insulating layer(7) and a second gate electrode layer is formed on the second region of the substrate via a second gate insulating layer(15). A first gate pattern and a second gate pattern are formed within the first and the second regions by performing selectively a patterning process on the resultant structure. The second gate insulating layer is formed under nitrogen atmosphere.
Abstract translation: 提供了一种用于形成图像传感器的方法，通过使用在氮气气氛下形成的第二栅极绝缘层的增强型双栅极绝缘层结构，通过抑制氮渗入栅极绝缘层来防止产生闪烁噪声。 第一区域和第二区域被限定在半导体衬底（1）上。 第一栅极电极层（9）经由第一栅极绝缘层（7）形成在衬底的第一区域上，并且第二栅极电极层经由第二栅极绝缘层（15）形成在衬底的第二区域上， 。 通过选择性地对所得结构进行图案化处理，在第一和第二区域内形成第一栅极图案和第二栅极图案。 第二栅极绝缘层在氮气氛下形成。
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公开(公告)号：KR1020120002331A
公开(公告)日：2012-01-05
申请号：KR1020100063153
申请日：2010-06-30
Applicant: 삼성전자주식회사
Inventor： 박원제
IPC: H01L27/146
CPC classification number: H01L27/1461 , H01L27/14636 , H01L27/14689
Abstract: PURPOSE: A CMOS image sensor comprising PNP triple layers, and a method for fabricating the same image sensor are provided to secure uniform photo response by forming an N type intermediate layer over a pixel region. CONSTITUTION: A substrate(100) is classified into a pixel region(A) and a peripheral circuit region(B). A PNP three layers(120) comprises a P-type sub-layer(122), an N type intermediate layer(124), and a P type top layer. An element isolation region(125), and a photo diode(130) and a well region(170) are formed within the P-type of the top part. The photo diode comprises an IR photo diode(130b) and a visible light photo diode(130a) for detecting infrared ray. The visible light photo diode comprises a PPD domain(132) and an NPD domain(134).
Abstract translation: 目的：提供一种包含PNP三层的CMOS图像传感器和用于制造相同图像传感器的方法，以通过在像素区域上形成N型中间层来确保均匀的光响应。 构成：将基板（100）分为像素区域（A）和外围电路区域（B）。 PNP三层（120）包括P型子层（122），N型中间层（124）和P型顶层。 在顶部的P型中形成元件隔离区域（125）和光电二极管（130）和阱区域（170）。 光电二极管包括用于检测红外线的IR光电二极管（130b）和可见光光电二极管（130a）。 可见光光电二极管包括PPD域（132）和NPD域（134）。
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Patent Agency Ranking
公开(公告)号：KR1020100103238A
公开(公告)日：2010-09-27
申请号：KR1020090021760
申请日：2009-03-13
Applicant: 삼성전자주식회사
IPC: H01L21/20 , H01L27/146
CPC classification number: H01L21/22 , H01L21/02532 , H01L21/02639 , H01L21/02658 , H01L21/324 , H01L27/14603 , H01L27/14612 , H01L27/14618 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H01L2224/48095 , H01L2224/48227 , H01L2924/00014
Abstract: PURPOSE: An epitaxial wafer manufacturing method and an epi wafer thereof, and an image sensor thereof are provided to form a high concentration boron layer inside a wafer. CONSTITUTION: A wafer which includes boron is provided by cutting a single crystal silicon ingot(S110). An oxide film is grown in the front and the rear surface of the wafer(S120). The wafer is heat-treated(S130). An insulating layer which is formed in one side of the wafer is removed(S140). One side of the wafer is calender-grinded(S150). An epitaxial layer is formed in the front side of the wafer(S160).
Abstract translation: 目的：提供外延晶片制造方法及其外延晶片及其图像传感器，以在晶片内形成高浓度硼层。 构成：通过切割单晶硅锭提供包括硼的晶片（S110）。 在晶片的前表面和后表面生长氧化膜（S120）。 将晶片进行热处理（S130）。 去除在晶片一侧形成的绝缘层（S140）。 将晶片的一侧压延成型（S150）。 在晶片的正面形成外延层（S160）。
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公开(公告)号：KR1020100025880A
公开(公告)日：2010-03-10
申请号：KR1020080084618
申请日：2008-08-28
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14689 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14636
Abstract: PURPOSE: CMOS image sensor and a method for manufacturing the same are provided to prevent the generation of a white spot by forming an impurity layer on a photodiode area and a floating diffusion area and blocking a metal contamination material. CONSTITUTION: A semiconductor substrate(100) is divided into a photodiode area, a floating diffusion area, an active pixel sensor(APS) array circuit area and a peripheral circuit area. An epi-layer(105) includes a first conductive impurity formed on the semiconductor substrate. An impurity photodiode(140) is formed in the photodiode area. A transfer transistor includes a first channel(125) and a second channel(130) in the epi-layer floating diffusion area. A plurality of CMOS transistors is formed on the APS array circuit area and the peripheral circuit area. An impurity filtering layer(155) is formed between the transfer transistor electrode and the APS array circuit area.
Abstract translation: 目的：提供CMOS图像传感器及其制造方法，以通过在光电二极管区域和浮动扩散区域上形成杂质层并阻止金属污染物质来防止产生白斑。 构成：将半导体衬底（100）分为光电二极管区域，浮动扩散区域，有源像素传感器（APS）阵列电路区域和外围电路区域。 外延层（105）包括在半导体衬底上形成的第一导电杂质。 在光电二极管区域中形成杂质光电二极管（140）。 传输晶体管包括外延层浮动扩散区域中的第一通道（125）和第二通道（130）。 在APS阵列电路区域和外围电路区域上形成多个CMOS晶体管。 在转移晶体管电极和APS阵列电路区域之间形成杂质过滤层（155）。
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公开(公告)号：KR1020090025933A
公开(公告)日：2009-03-11
申请号：KR1020070091140
申请日：2007-09-07
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/1462 , H01L27/14689 , H01L29/6656
Abstract: An image sensor and a manufacturing method thereof are provided to prevent the etching damage of the photodiode surface by forming the upper body of the pattern for the photo diode protection with the silicon nitride film. An image sensor comprises photodiodes(112,114) which are formed within a substrate(101), and accumulate the photo-charge; a floating diffusion area(120) detecting the photo-charge accumulated in the photo diode; a transfer gate(130) delivering the photo-charge accumulated in the photo diode to the floating diffusion area; a pattern(220a) for the photodiode protection which is extended to one side wall and the upper side of the transfer gate conformably; the first spacer(220b) formed in the other sidewall of the transfer gate; the second spacers(240a,240b) formed in the pattern for the photodiode protection.
Abstract translation: 提供一种图像传感器及其制造方法，以通过用氮化硅膜形成用于光电二极管保护的图案的上体来防止光电二极管表面的蚀刻损伤。 图像传感器包括形成在基板（101）内并累积光电荷的光电二极管（112,114）; 浮动扩散区域（120），检测累积在光电二极管中的光电荷; 将累积在光电二极管中的光电荷输送到浮动扩散区的传输门（130）; 用于光电二极管保护的图案（220a），其一致地延伸到传输门的一个侧壁和上侧; 形成在传送门的另一个侧壁中的第一间隔物（220b）; 以用于光电二极管保护的图案形成的第二间隔物（240a，240b）。
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公开(公告)号：KR100827447B1
公开(公告)日：2008-05-06
申请号：KR1020070007665
申请日：2007-01-24
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14647 , H01L27/1463 , H01L27/14656 , H01L27/14689
Abstract: An image sensor, a manufacturing method thereof, and an image sensing method are provided to suppress a crosstalk due to a random drift of charges by forming a potential barrier on a lower substrate region. A photoelectric converter(110) is formed in a semiconductor substrate(101) with a depth between 1 and 3 mum and includes a photodiode with a second conductivity type and a capping layer with a first conductivity type. The photodiode accumulates charges corresponding to an incident beam. The capping layer is formed on the photodiode. A charge detector(120) receives the accumulated charges from the photoelectric converter and converts the charges into an electrical signal. A charge transfer part(130) delivers the accumulated charges to the charge detector. A voltage application unit(Vb) applies voltages on the capping layer and a lower portion of the semiconductor substrate, such that a width of a depletion layer is adjusted. The depletion layer is formed on the photodiode.
Abstract translation: 提供了图像传感器及其制造方法和图像感测方法，以通过在下基板区域上形成势垒来抑制由于电荷的随机漂移引起的串扰。 光电转换器（110）形成在深度在1至3μm之间的半导体衬底（101）中，并且包括具有第二导电类型的光电二极管和具有第一导电类型的覆盖层。 光电二极管累积与入射光束对应的电荷。 覆盖层形成在光电二极管上。 电荷检测器（120）从光电转换器接收累积的电荷并将电荷转换成电信号。 电荷转移部分（130）将累积的电荷传送到电荷检测器。 电压施加单元（Vb）在覆盖层和半导体衬底的下部施加电压，从而调整耗尽层的宽度。 耗尽层形成在光电二极管上。
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公开(公告)号：KR1020070075160A
公开(公告)日：2007-07-18
申请号：KR1020060003604
申请日：2006-01-12
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14603 , H01L27/14609 , H01L27/14689
Abstract: A method for fabricating an image sensor is provided to reduce a potential barrier generated by an impurity density difference between regions in a transfer gate pattern by forming an image sensor after impurities of a first conductivity type are implanted into a transfer gate pattern. A gate insulation layer and a gate conductive layer doped with impurities of a first conductivity type are formed on a semiconductor substrate(102). The gate insulation layer and the gate conductive layer are patterned to form a transfer gate pattern. A photodiode of the first conductivity type is formed at one side of the transfer gate pattern and a photodiode of a second conductivity type is formed on the photodiode of the first conductivity type. A floating diffusion region of the first conductivity type is formed in the substrate at the other side of the transfer gate pattern to complete a transfer gate electrode. In forming a gate conductive layer, the impurities of the first conductivity type can be doped at a dosage that can invert the impurities in the photodiode of the second conductivity type.
Abstract translation: 提供一种用于制造图像传感器的方法，用于通过在将第一导电类型的杂质注入传输栅极图案之后形成图像传感器来减小由传输栅极图案中的区域之间的杂质浓度差产生的势垒。 在半导体衬底（102）上形成栅极绝缘层和掺杂有第一导电类型的杂质的栅极导电层。 栅极绝缘层和栅极导电层被图案化以形成传输栅极图案。 第一导电类型的光电二极管形成在传输栅极图案的一侧，并且在第一导电类型的光电二极管上形成第二导电类型的光电二极管。 在传输栅极图案的另一侧的基板中形成第一导电类型的浮动扩散区域，以完成传输栅电极。 在形成栅极导电层时，可以以能够反转第二导电类型的光电二极管中的杂质的剂量来掺杂第一导电类型的杂质。
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