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公开(公告)号：KR1020030033858A
公开(公告)日：2003-05-01
申请号：KR1020010066022
申请日：2001-10-25
Applicant: 삼성전자주식회사
IPC: G11B9/00
Abstract: PURPOSE: A media for recording data, and an apparatus and a method for writing and reading data applying the same are provided to directly write and read data without using an optical pickup, thereby speeding up recording, and storing the data at a high density. CONSTITUTION: A support base(5) has a plurality of voids(5a) and has electric insulation. A microheating part(5c) is provided at one side of each void of the support base. A data recording element(5d) is provided at the other side of each void to be contacted with the microheating part. The data recording element is formed of a phase change material in which phase change is generated and has electric resistances different according to the phases. A photo conductor layer(6) is formed at one surface of the support base to be electrically contacted with the microheating part. A transparent lower electrode(7) is formed at one surface of the photo conductor layer. An upper electrode(4) is formed at the other surface of the support base to be electrically contacted with the data recording element.
Abstract translation: 目的：提供用于记录数据的介质，以及用于写入和读取应用该数据的数据的装置和方法，以直接写入和读取数据而不使用光学拾取器，从而加速记录并以高密度存储数据。 构成：支撑座（5）具有多个空隙（5a）并且具有电绝缘。 在支撑基座的每个空隙的一侧设置微加热部（5c）。 数据记录元件（5d）设置在与微加热部件接触的每个空隙的另一侧。 数据记录元件由相变材料形成，其中产生相变并且具有根据相的不同的电阻。 光电导体层（6）形成在支撑基座的一个表面，以与微加热部分电接触。 在光导体层的一个表面形成有透明的下电极（7）。 上电极（4）形成在支撑基座的另一个表面，以与数据记录元件电接触。
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公开(公告)号：KR100370395B1
公开(公告)日：2003-01-29
申请号：KR1019990049949
申请日：1999-11-11
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A method for manufacturing a GaN thin film of low defect density is provided to remarkably decrease defect density, by controlling a growth temperature in at least two steps, or/and by controlling the ratio of a V group and a III group of an inputted growth material. CONSTITUTION: A GaN thin film is grown at the first temperature or higher so that the GaN thin film is laterally grown at a predetermined rate or higher. Before the GaN thin film laterally grown at the first temperature coalesces on a mask pattern, the first temperature is reduced to the second temperature lower than the first temperature to grow the GaN thin film.
Abstract translation: 目的：提供一种低缺陷密度的GaN薄膜的制造方法，通过至少在两个步骤中控制生长温度，或/和通过控制一个V基团和一个III基团的比率来显着降低缺陷密度 输入的生长材料。 构成：在第一温度或更高温度下生长GaN薄膜，使得GaN薄膜以预定速率或更高速度横向生长。 在以第一温度横向生长的GaN薄膜在掩模图案上聚结之前，将第一温度降低至低于第一温度的第二温度以生长GaN薄膜。
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公开(公告)号：KR100785027B1
公开(公告)日：2007-12-11
申请号：KR1020060107932
申请日：2006-11-02
Applicant: 삼성전자주식회사
IPC: G01N33/569 , G01N33/53 , G01N33/533
Abstract: A bio-sensor is provided to reduce the size and lower the price by forming a light source and a light detector fit in the microorganism sensor, thereby being applied to various consumer products. A bio-sensor comprises a substrate(110); a light emitting structure(100) formed on the substrate; and a light receiving structure(200) which is formed on the substrate having intervals with the light emitting structure and a light emitting surface(101) and has a light receiving surface(201) heading toward the intervals and is characterized in that it detects the microorganism by applying light to the microorganism existent in the intervals using the light emitting structure and then receiving fluorescence generated by the microorganism using the light receiving structure. A method for preparing the bio-sensor comprises the steps of: (a) layering a first material layer, an active layer and a second material layer on a first region of a substrate to form a light emitting structure; (b) masking the light emitting structure and the substrate with a protecting material to define a second region on the substrate having an interval with the first region; and (c) layering an n-semiconductor material layer, a light-receiving layer, and a p-semiconductor material layer on the second region to form a light receiving surface heading toward the interval. The method further comprises a step of forming a light filter layer passing the fluorescence by depositing a dielectric material on the light receiving surface.
Abstract translation: 提供生物传感器以通过在微生物传感器中形成光源和光检测器来减小尺寸并降低价格，从而应用于各种消费品。 生物传感器包括基底（110）; 形成在所述基板上的发光结构（100） 以及形成在具有发光结构的间隔的基板上的受光结构（200）和发光面（101），并且具有朝向间隔朝向的光接收面（201），其特征在于， 微生物通过使用发光结构在间隔中存在于微生物中，然后使用光接收结构接收由微生物产生的荧光。 制备生物传感器的方法包括以下步骤：（a）在衬底的第一区域上分层第一材料层，有源层和第二材料层以形成发光结构; （b）用保护材料掩蔽所述发光结构和所述衬底，以在所述衬底上限定与所述第一区域间隔的第二区域; 以及（c）在所述第二区域上分层n半导体材料层，光接收层和p半导体材料层，以形成朝向所述间隔的光接收表面。 该方法还包括通过在光接收表面上沉积介电材料来形成通过荧光的滤光层的步骤。
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公开(公告)号：KR100590523B1
公开(公告)日：2006-06-15
申请号：KR1020010066022
申请日：2001-10-25
Applicant: 삼성전자주식회사
IPC: G11B9/00
Abstract: 정보 기록용 미디어, 이를 적용한 장치 및 방법에 관해 개시된다. 개시된 미디어는: 지지 베이스의 각 미소공극의 일측에 마련되는 미소발열부와; 상기 지지베이스의 각 공극의 타측에 상기 미소발열부와 접촉되게 마련되는 것으로 소정 레벨의 열에너지의 흡수에 의해 상변화(phase change)가 발생되며 상에 따라 다른 전기적 저항을 가지는 상변환물질로 된 정보기록요소와; 상기 미소발열부와 전기적으로 접촉되도록 상기 지지베이스의 일측면에 형성되는 광도전층과; 상기 광도전층의 일면에 형성되는 투명성 하부 전극과; 상기 정보기록요소들에 전기적으로 접촉되도록 상기 지지 베이스의 타측면에 형성되는 상부전극을; 구비한다. 본 발명에 따르면, 기존의 광기록의 시스템 개념을 크게 벗어나지 않으면서 광픽업장치를 사용하지 않고 데이터를 직접 쓰고 읽을 수 있으므로 기록속도가 빠르게 되고 낮은 출력의 레이저 광원으로 정보기록이 가능하게 된다. 이러한 본 발명은 기록속도가 매우 빠르고 특히 고밀도의 정보의 저장이 가능하게 된다.
광기록, 상변화, 레이저, 발열-
公开(公告)号：KR1020050118658A
公开(公告)日：2005-12-19
申请号：KR1020050115061
申请日：2005-11-29
IPC: H01L33/40
Abstract: 질화갈륨계 화합물 반도체에 관한 것으로서 특히 p-형 전극 및 이를 적용하는 III-V 족 화합물반도체에 관해 개시한다. 본 발명의 p-전극은 III-V족 질화물 화합물 반도체 층에 형성되는 것으로 아연에 용질 원소가 포함된 아연계 물질에 의한 제 1 층; 상기 제 1 층 상부에 적층되는 것으로 Au로 된 제 2 층, 그리고 상기 제 1 층과 제 2 층의 사이에 마련되는 것으로 {Ni, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Sn, Ge, Sb} 이루어지는 그룹에서 선택된 적어도 어느 하나의 물질에 의한 중간층;을 포함한다. 아연계 p-형 전극은 우수한 전기, 광학 및 열적 특성을 나타내 보인다.
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Patent Agency Ranking
公开(公告)号：KR100446615B1
公开(公告)日：2004-09-04
申请号：KR1020010062079
申请日：2001-10-09
Applicant: 삼성전자주식회사
IPC: H01S5/30
CPC classification number: H01S5/227 , H01S5/2206 , H01S5/2213 , H01S5/2272 , H01S5/32341
Abstract: A semiconductor laser diode and a manufacturing for fabricating the same are provided. The semiconductor laser diode includes a substrate (100), masks (114) that are formed at both sides of the substrate, a light generating layer that is formed on the substrate between the masks, current blocking layers (116) that are formed on the masks (114), respectively, and first and second electrodes (122, 120) that are formed on the bottom surface of the substrate (100) and on the top surface of the light generating layer, respectively. The optical generating layer and the current blocking layer are simultaneously formed through single growth, and the current blocking layer confines current and light in a lateral direction in the light generating layer. Thus, a semiconductor laser diode manufacturing process can be simplified, and threshold current for laser oscillation can be lowered.
Abstract translation: 提供半导体激光二极管及其制造的制造。 该半导体激光二极管包括衬底（100），形成在衬底两侧的掩模（114），形成在衬底之间的衬底上的光产生层，形成在衬底（100）上的电流阻挡层 掩模（114）以及分别形成在衬底（100）的底表面和光生成层的顶表面上的第一和第二电极（122,120）。 光产生层和电流阻挡层通过单次生长同时形成，并且电流阻挡层在光产生层中沿横向方向限制电流和光。 因此，可以简化半导体激光二极管的制造工艺，并且可以降低用于激光振荡的阈值电流。 ＆lt;图像＆GT;
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公开(公告)号：KR1020070117331A
公开(公告)日：2007-12-12
申请号：KR1020060051463
申请日：2006-06-08
Applicant: 삼성전자주식회사
CPC classification number: H04N9/3129
Abstract: A laser display device is provided to form an image through luminescence of red and green fluorescent bodies of a blue laser beam and scattering of a blue scatter to increase brightness and contrast ratio. A laser display device is composed of a light source(100) which is a blue laser diode(L1,L2,L3) for emitting at least one laser beam(L); a scanning unit(150) for horizontally and vertically scanning the laser beam; an imaging unit(190) for forming an image and generating the excited light and the scattered light by the laser beam irradiated from the scanning unit; and a collimating optical system(110) disposed between the light source and a light modulating unit(120) to change the laser beam, emitted from the light source, to the parallel light.
Abstract translation: 提供激光显示装置以通过蓝色激光束的红色和绿色荧光体的发光和蓝色散射的散射来形成图像，以增加亮度和对比度。 激光显示装置由用于发射至少一个激光束（L）的蓝色激光二极管（L1，L2，L3）的光源（100）构成。 用于水平和垂直扫描激光束的扫描单元（150）; 用于形成图像并通过从扫描单元照射的激光束产生激发光和散射光的成像单元（190）; 以及设置在光源和光调制单元（120）之间以将从光源发射的激光束改变为平行光的准直光学系统（110）。
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公开(公告)号：KR1020030030227A
公开(公告)日：2003-04-18
申请号：KR1020010062079
申请日：2001-10-09
Applicant: 삼성전자주식회사
IPC: H01S5/30
CPC classification number: H01S5/227 , H01S5/2206 , H01S5/2213 , H01S5/2272 , H01S5/32341
Abstract: PURPOSE: A semiconductor laser diode and a fabrication method thereof are provided to have a buried hetero structure of a high efficiency by maximizing current and light restraint effects. CONSTITUTION: A mask(114) is formed at each of both sides of a substrate(100), and a light generating layer is formed on the substrate between the masks. Blocking layers(116) are formed respectively on the masks and restraint current and light in a side direction of the light generating layer. The first and second electrodes(122,120) are formed at a lower surface of the substrate and an upper surface of the light generating layer. The light generating layer comprises the first clad layer(104), an active layer(108), the second clad layer(111), the first waveguide layer(106) and the second waveguide layer(110). A current blocking layer(118) is formed between the second electrode and the light generating layer.
Abstract translation: 目的：提供一种半导体激光二极管及其制造方法，通过使电流和光束效应最大化，具有高效率的掩埋异质结构。 构成：在基板（100）的两侧的每一侧形成有掩模（114），并且在基板上在掩模之间形成发光层。 阻挡层（116）分别形成在掩模上并限制光产生层的侧面方向上的电流和光。 第一和第二电极（122,120）形成在基板的下表面和光产生层的上表面。 光发生层包括第一覆层（104），有源层（108），第二覆层（111），第一波导层（106）和第二波导层（110）。 在第二电极和发光层之间形成电流阻挡层（118）。
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公开(公告)号：KR1020010046252A
公开(公告)日：2001-06-05
申请号：KR1019990049949
申请日：1999-11-11
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A method for manufacturing a GaN thin film of low defect density is provided to remarkably decrease defect density, by controlling a growth temperature in at least two steps, or/and by controlling the ratio of a V group and a III group of an inputted growth material. CONSTITUTION: A GaN thin film is grown at the first temperature or higher so that the GaN thin film is laterally grown at a predetermined rate or higher. Before the GaN thin film laterally grown at the first temperature coalesces on a mask pattern, the first temperature is reduced to the second temperature lower than the first temperature to grow the GaN thin film.
Abstract translation: 目的：提供一种制造低缺陷密度的GaN薄膜的方法，通过在至少两个步骤中控制生长温度或/和通过控制V组和III组的比例来显着降低缺陷密度 输入成长材料。 构成：在第一温度或更高温度下生长GaN薄膜，使得GaN薄膜以预定速率或更高速率横向生长。 在以第一温度横向生长的GaN薄膜在掩模图案下聚结之前，将第一温度降低到低于第一温度的第二温度以生长GaN薄膜。
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公开(公告)号：KR100738110B1
公开(公告)日：2007-07-12
申请号：KR1020060032746
申请日：2006-04-11
Applicant: 삼성전자주식회사
IPC: H01S5/30
Abstract: A semiconductor laser diode array is provided to improve the yield by vertically bonding a semiconductor laser diode chip of a dual ridge structure. A semiconductor laser diode array includes a lower semiconductor laser diode chip(100), an upper semiconductor laser diode chip(200), and an electrode unit. The lower semiconductor laser diode chip(100) of a dual structure has a lower substrate, a first oscillation unit(120) which is mounted on the lower substrate, and a second oscillation unit(140) which is mounted to be apart from the first oscillation unit(120). The upper semiconductor laser diode chip(200) of a dual structure has an upper substrate, a third oscillation unit(220) which is mounted on the upper substrate, and a fourth oscillation unit(240) which is mounted to be apart from the third oscillation unit(220). The electrode unit connects electrically the first to fourth oscillation units(120,140,220,240) with the outside. The first oscillation unit(120) and the third oscillation unit(220) are vertically bonded, and the second oscillation unit(140) and the fourth oscillation unit(240) are vertically bonded so that first to fourth light emitting points which emit laser light of the first to fourth oscillation units(120,140,220,240) are arrayed two-dimensionally.
Abstract translation: 提供半导体激光二极管阵列以通过垂直结合双脊结构的半导体激光二极管芯片来提高成品率。 半导体激光二极管阵列包括下半导体激光二极管芯片（100），上半导体激光二极管芯片（200）和电极单元。 双重结构的下半导体激光二极管芯片（100）具有下基板，安装在下基板上的第一振荡单元（120）和安装为与第一振荡单元（120）分开的第二振荡单元 振荡单元（120）。 双重结构的上半导体激光二极管芯片（200）具有上基板，安装在上基板上的第三振荡单元（220）和安装成与第三振荡单元 振荡单元（220）。 电极单元将第一至第四振荡单元（120,140,220,240）与外部电连接。 第一振荡单元（120）和第三振荡单元（220）垂直结合，第二振荡单元（140）和第四振荡单元（240）垂直结合，使得发射激光的第一至第四发光点 第一至第四振荡单元（120,140,220,240）的二维排列。
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