-
公开(公告)号：KR1020000020994A
公开(公告)日：2000-04-15
申请号：KR1019980039882
申请日：1998-09-25
Applicant: 삼성전자주식회사
IPC: H01L21/302
Abstract: PURPOSE: A method for driving a spin scrubber is provided to improve the reliability of a semiconductor device in the process of fabricating a semiconductor device and to minimize the generation of an inferiority by the removal of particle using a brush. CONSTITUTION: A spin scrubber cleans the surface of a wafer(W) using a brush(14). The rotation direction of the brush is opposite to the rotation direction of a spin chuck(10) where the wafer is installed. The spin scrubber comprises the spin chuck and the brush, and comprises a spin arm(12) in order to clean the surface of the wafer by being faced to the wafer rotated by the spin chuck, and the brush is rotated by the driving of the spin arm. The brush cleans the surface of the wafer as jetting a deionized water onto the surface of the wafer using a nozzle(16).
Abstract translation: 目的：提供一种用于驱动旋转洗涤器的方法，以在半导体器件的制造过程中提高半导体器件的可靠性，并且通过使用刷子去除颗粒来最小化劣质的产生。 构成：旋转洗涤器使用刷子（14）清洁晶片（W）的表面。 刷子的旋转方向与安装晶片的旋转卡盘（10）的旋转方向相反。 旋转洗涤器包括旋转卡盘和刷子，并且包括旋转臂（12），以便通过面对由旋转卡盘旋转的晶片来清洁晶片的表面，并且通过驱动 旋转臂。 刷子使用喷嘴（16）将去离子水喷射到晶片的表面上来清洁晶片的表面。
-
Patent Agency Ranking
公开(公告)号：KR100568098B1
公开(公告)日：2006-04-05
申请号：KR1019990002250
申请日：1999-01-25
Applicant: 삼성전자주식회사
Inventor： 노홍조
Abstract: 본 발명은 금속 패턴(metal pattern) 형성 방법에 관한 것으로, 반도체 기판 상에 하부 절연막 및 두꺼운 금속막(thick metal layer)이 차례로 증착 된다. 금속막은 포토레지스트 패턴(photoresist pattern)을 사용하여 종래와 반대로, 먼저 건식 식각 공정으로 그 일부 두께가 식각 된다. 건식 식각 공정시, 포토레지스트막과 금속막의 식각 선택비가 습식 식각 공정에서보다 낮기 때문에 포토레지스트 스컴(photoresist scum)에 의한 금속 언에치(metal unetch)는 발생되지 않는다. 금속막의 나머지 두께가 습식 식각 공정으로 식각 된다. 금속막이 실리콘을 소량 함유한 알루미늄막인 경우, 실리콘 잔류물을 제거하기 위해서 후속 공정으로 실리콘 표면 처리(surface treatment) 공정이 더 수행될 수도 있다. 이와 같은 반도체 장치의 제조 방법에 의해서, 20000Å 이상의 두꺼운 금속막을 다단계로 식각 함에 있어서, 건식 식각 공정을 먼저 수행한 후 습식 식각 공정을 나중에 수행함으로써, 실리콘 잔류물 발생 및 금속 언에치 등의 금속 식각 불량을 방지할 수 있고, 하부 절연막의 어택(attack)을 최소화 할 수 있으며, 금속막 증착 두께 마진 및 금속막의 식각 마진을 증가시킬 수 있다.
Abstract translation: 本发明涉及一种形成金属图案的方法，其中在半导体衬底上依次沉积下绝缘膜和厚金属层。 使用光致抗蚀剂图案，与常规相比，通过干法蚀刻工艺部分蚀刻金属膜。 在干蚀刻工艺中，由于光致抗蚀剂膜和金属膜之间的蚀刻选择比低于湿蚀刻工艺中的蚀刻选择比，因此不会产生由于光致抗蚀剂浮渣导致的金属蚀刻。 通过湿法蚀刻工艺来蚀刻金属膜的剩余厚度。 在金属膜是含有少量硅的铝膜的情况下，可以在随后的步骤中进一步执行硅表面处理工艺以去除硅残余物。 发生时，通过执行后的湿蚀刻工艺中，金属蚀刻，例如在硅残余值执行第一后的干蚀刻工艺作为这样的方法，蚀刻的多级膜，厚金属过20000A由半导体器件的制造方法及金属冷冻 可以防止缺陷，可以使下绝缘膜的侵蚀最小化，并且可以增加金属膜沉积厚度裕度和金属膜的蚀刻余量。
-
公开(公告)号：KR101907510B1
公开(公告)日：2018-10-16
申请号：KR1020110114940
申请日：2011-11-07
Applicant: 삼성전자주식회사
IPC: H01L21/67
Abstract: 세정액과 2유체혼합물을동시에분사하는기판세척장치및 방법에있어서, 상면에세척대상가공물이형성된기판을회전가능한지지대에고정한다. 제1 노즐을통하여회전하는기판의상면으로세정액을공급하여기판으로부터 1차불순물을분리한다. 제2 노즐을통하여회전하는기판의상면으로 2유체혼합물을세정액과동시에공급하여세정액에의해분리되지않은 2차불순물을기판으로부터분리한다. 1차및 2차불순물을포함하는세정액및 2유체혼합물을기판으로부터제거한다. 고속고압의 2유체혼합물에의해기판표면의가공물이손상되는것을방지할수 있다.
-
公开(公告)号：KR1020000013795A
公开(公告)日：2000-03-06
申请号：KR1019980032863
申请日：1998-08-13
Applicant: 삼성전자주식회사
IPC: H01L21/28
Abstract: PURPOSE: A method for forming metal line layer of semiconductor device is provided to selectively remove a dregs of silicon does not removed in a metal line layer forming process. CONSTITUTION: A metal line contained a silicon is formed on a silicon substrate. A photoresist pattern having a window for exposing a metal line to be removed is formed. The exposed metal line is etched using an aluminum etching liquid. A silicon dregs remained on the metal line is etched using a polysilicon etching liquid. The exposed metal line is etched using a dry etching process. And the photoresist pattern is removed.
Abstract translation: 目的：提供一种用于形成半导体器件的金属线层的方法，以选择性地去除金属线层形成工艺中未除去的硅渣。 构成：在硅衬底上形成包含硅的金属线。 形成具有用于暴露要去除的金属线的窗口的光致抗蚀剂图案。 使用铝蚀刻液蚀刻暴露的金属线。 使用多晶硅蚀刻液蚀刻残留在金属线上的硅渣。 使用干蚀刻工艺蚀刻暴露的金属线。 并去除光致抗蚀剂图案。
-
公开(公告)号：KR1020130049903A
公开(公告)日：2013-05-15
申请号：KR1020110114940
申请日：2011-11-07
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: H01L21/67051
Abstract: PURPOSE: A substrate cleaning method and a substrate cleaning apparatus are provided to minimize a splash by moving cleaning solutions to the peripheral area of a substrate. CONSTITUTION: A substrate is fixed to a rotatable support stand(S100). The substrate is rotated through a first nozzle. A first impurity is separated by supplying cleaning solutions to the substrate(S200). A second impurity is separated by simultaneously supplying the cleaning solutions and a 2 fluid mixture(S300). The cleaning solution and the 2 fluid mixture are removed from the substrate(S400). [Reference numerals] (AA) Start; (BB) End; (S100) Step of fixing a substrate with a washing target processed product to a support; (S200) Step of separating a first impurity from the substrate by supplying cleaning solutions through a first nozzle; (S300) Step of separating a second impurity, which is not separated from the substrate, by the cleaning solutions by simultaneously supplying the cleaning solutions and a 2 fluid mixture through a second nozzle; (S400) Step of removing the cleaning solutions and the 2 fluid mixture including the first and second impurities from the substrate
Abstract translation: 目的：提供基板清洗方法和基板清洁装置，以通过将清洁溶液移动到基板的周边区域来最小化飞溅。 构成：将基板固定在可旋转支撑台上（S100）。 基板旋转通过第一喷嘴。 通过向基板供给清洗溶液来分离第一杂质（S200）。 通过同时供应清洁溶液和2种流体混合物来分离第二种杂质（S300）。 将清洗溶液和2液体混合物从基材上除去（S400）。 （附图标记）（AA）开始; （BB）结束; （S100）将具有洗涤对象物处理品的基板固定在支撑体上的工序; （S200）通过第一喷嘴供给清洗液从基板分离出第一杂质的工序; （S300）通过同时供给清洗液和通过第二喷嘴的2液体混合物，用清洗液分离不与基板分离的第二杂质的工序; （S400）从基板除去包括第一和第二杂质的清洗液和2液体混合物的步骤
-
公开(公告)号：KR1020000051678A
公开(公告)日：2000-08-16
申请号：KR1019990002250
申请日：1999-01-25
Applicant: 삼성전자주식회사
Inventor： 노홍조
CPC classification number: H01L21/0337 , G03F1/80 , H01L21/30604 , H01L21/3065 , H01L21/32139
Abstract: PURPOSE: A method for forming a metal pattern is provided to prevent the generation of a silicon residual material and the inferiority of the metal etching. CONSTITUTION: A metal pattern comprises an insulating layer(100) which is evaporated on a semiconductor substrate and a metal layer(102) which is evaporated on the insulating layer(100). The metal(102) is etched in multi-steps. A mask pattern(104) is formed on the metal layer(102). A portion of the metal layer(102) is dry etched by using a mask pattern(104). The other portions of the metal layer(102) is wet etched so that the upper surface of the insulating layer(100) is exposed by using the mask pattern(104).
Abstract translation: 目的：提供一种用于形成金属图案的方法，以防止硅残留材料的产生和金属蚀刻的劣化。 构成：金属图案包括在半导体衬底上蒸发的绝缘层（100）和在绝缘层（100）上蒸发的金属层（102）。 金属（102）被多级蚀刻。 在金属层（102）上形成掩模图案（104）。 通过使用掩模图案（104）对金属层（102）的一部分进行干蚀刻。 金属层（102）的其它部分被湿式蚀刻，使得绝缘层（100）的上表面通过使用掩模图案（104）而暴露。
-
-
-
-
-
Search Results
6
records
(took 0.018 seconds)
