公开(公告)号：KR1020090099361A

公开(公告)日：2009-09-22

申请号：KR1020080024554

申请日：2008-03-17

Applicant: 삼성전자주식회사

Inventor： 문성호 ,  이선우 ,  마야 ,  윤홍식 ,  김동우 ,  왕샤오펑

IPC: G01N27/12 ,  G01N27/00

Abstract: A carbon nano tube gas sensor and a manufacturing method thereof are provided to realize mass production with high sensitivity without depending on an electric characteristic of a carbon nano tube. A carbon nano tube gas sensor includes a lower electrode(120), a catalyst layer(125), an insulating layer pattern(130), an upper electrode(140), a carbon nano tube(150) and a power supply unit(160). The catalyst layer is formed on a lower electrode. The insulating layer pattern has an opening which passes to expose a surface of the catalyst layer. The upper electrode is formed on the insulating layer pattern. The opening passes through the upper electrode. The carbon nano tube grows in the catalyst layer exposed to the opening. The carbon nano tube comprises a gas absorption site. The power supply unit is connected to the lower electrode and the upper electrode. A detector(170) is installed between the lower electrode and the power supply unit. The detector detects a vibration number change of a carbon nano tube to determine whether to absorb gas.

Abstract translation: 提供一种碳纳米管气体传感器及其制造方法，以实现高灵敏度的批量生产，而不依赖于碳纳米管的电特性。 碳纳米管气体传感器包括下电极（120），催化剂层（125），绝缘层图案（130），上电极（140），碳纳米管（150）和电源单元（160） ）。 催化剂层形成在下电极上。 绝缘层图案具有通过以暴露催化剂层的表面的开口。 上部电极形成在绝缘层图案上。 开口穿过上电极。 碳纳米管在暴露于开口的催化剂层中生长。 碳纳米管包括吸气部位。 电源单元连接到下电极和上电极。 检测器（170）安装在下电极和电源单元之间。 检测器检测碳纳米管的振动数量变化，以确定是否吸收气体。

公开(公告)号：KR1020090120729A

公开(公告)日：2009-11-25

申请号：KR1020080046676

申请日：2008-05-20

Applicant: 삼성전자주식회사

Inventor： 문성호 ,  윤홍식 ,  마야 ,  이선우 ,  김동우 ,  왕샤오펑

IPC: H01L27/115 ,  H01L21/8247 ,  B82Y10/00

CPC classification number: H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  H01L51/0048 ,  H01L51/057 ,  H01L51/0579 ,  H01L21/28141

Abstract: PURPOSE: A memory device including a carbon nano tube and a method of manufacturing the same are provided to control a current direction of a memory device by a diode included in an upper electrode, thereby preventing a leakage current in advance while obtaining stable rectification. CONSTITUTION: A memory device including a carbon nano tube includes a lower electrode(120), an upper electrode, an interlayer insulating film pattern, and a carbon nano tube wire. The upper electrode(140) includes the first opening. The interlayer film pattern(130) is interposed between the upper and lower electrodes. The interlayer film pattern is connected to the first opening. The carbon nano tube wire(150) is grown up from the lower electrode exposed to the second opening.

Abstract translation: 目的：提供一种包括碳纳米管的存储装置及其制造方法，以通过上电极中包含的二极管控制存储器件的电流方向，从而在获得稳定的整流的同时预先防止漏电流。 构成：包括碳纳米管的存储器件包括下电极（120），上电极，层间绝缘膜图案和碳纳米管线。 上电极（140）包括第一开口。 中间膜图案130插入在上下电极之间。 中间膜图案连接到第一开口。 碳纳米管线（150）从暴露于第二开口的下电极生长。

公开(公告)号：KR1020090095983A

公开(公告)日：2009-09-10

申请号：KR1020080021274

申请日：2008-03-07

Applicant: 삼성전자주식회사

Inventor： 문성호 ,  이선우 ,  윤홍식 ,  마야 ,  김동우 ,  왕샤오펑

IPC: H01L21/28 ,  B82Y40/00

CPC classification number: H01L21/76877 ,  B82Y40/00 ,  H01L21/7685

Abstract: A semiconductor device included carbon nano-tube wire and a method of manufactured semiconductor device included a carbon nano-tube wire are provided to increase the combination between a carbon-nono tube wire and a contact metal film by preventing a metal atom of an upper electrode from being moved to the contact metal film. In a semiconductor device included carbon nano-tube wire and a method of manufactured semiconductor device included a carbon nano-tube wire, a bottom electrode(220) is formed on the substrate(210). A carbon nano-tube wiring(240) is formed within the opening of an insulating layer pattern(230) exposing the surface of the bottom electrode. A contact metal film(250) is formed on the carbon nano-tube wiring and the insulating layer pattern.

Abstract translation: 提供了包括碳纳米管线的半导体器件和包括碳纳米管线的制造的半导体器件的方法，以通过防止上电极的金属原子来增加碳 - 非管线和接触金属膜之间的组合 从移动到接触金属膜。 在包括碳纳米管线的半导体器件和制造的半导体器件的方法中，包括碳纳米管线，在基板（210）上形成底部电极（220）。 在暴露底部电极的表面的绝缘层图案（230）的开口内形成碳纳米管布线（240）。 在碳纳米管布线和绝缘层图案上形成接触金属膜（250）。