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    전해질, 그 제조방법 및 이를 포함하는 이차 전지
    7.
    发明公开
    전해질, 그 제조방법 및 이를 포함하는 이차 전지 审中-实审
    其电解质制备方法和包含电解质的二次电池

    公开(公告)号：KR1020170007850A

    公开(公告)日：2017-01-20

    申请号：KR1020170004201

    申请日：2017-01-11

    Applicant: 삼성전자주식회사

    Inventor： 문준혁 ,  이명진 ,  장원석 ,  강효랑

    IPC: H01M10/0565 ,  H01M10/052

    Abstract: 이온전도상(conductive phase) 및구조상(structural phase)을포함하는이중연결도메인(co-continuous domain)을함유하는블록공중합체이며상기구조상은상온이하의유리전이온도를갖는고분자세그먼트를포함하는전해질, 그제조방법및 이를포함하는이차전지가제공된다.

    Abstract translation: 公开了一种电解质及其制造方法和包含该电解质的二次电池。 电解质是含有包含离子导电相和结构相的共连续畴的嵌段共聚物。 结构相包括具有小于或等于室温的玻璃化转变温度的聚合物链段。

    전해질, 그 제조방법 및 이를 포함하는 이차 전지
    8.
    发明公开
    전해질, 그 제조방법 및 이를 포함하는 이차 전지 有权
    电解质，其制备方法和包含电解质的二次电池

    公开(公告)号：KR1020160037061A

    公开(公告)日：2016-04-05

    申请号：KR1020150060088

    申请日：2015-04-28

    Applicant: 삼성전자주식회사

    Inventor： 문준혁 ,  이명진 ,  장원석 ,  강효랑

    IPC: H01M10/0565 ,  H01M10/052

    Abstract: 이온전도상(conductive phase) 및구조상(structural phase)을포함하는이중연결도메인(co-continuous domain)을함유하는블록공중합체이며상기구조상은상온이하의유리전이온도를갖는고분자세그먼트를포함하는전해질, 그제조방법및 이를포함하는이차전지가제공된다.

    Abstract translation: 公开了一种电解质及其制造方法和包含该电解质的二次电池。 电解质是含有包含离子导电相和结构相的共连续畴的嵌段共聚物。 结构相包括具有小于或等于室温的玻璃化转变温度的聚合物链段。

    분리막 및 상기 분리막을 포함하는 수처리 장치
    9.
    发明公开
    분리막 및 상기 분리막을 포함하는 수처리 장치 审中-实审
    分离膜和包括其的水处理装置

    公开(公告)号：KR1020130131758A

    公开(公告)日：2013-12-04

    申请号：KR1020120055550

    申请日：2012-05-24

    Applicant: 삼성전자주식회사 ,  한양대학교 산학협력단

    Inventor： 강효 ,  문준혁 ,  박호범 ,  한성수 ,  김효원 ,  조영훈

    IPC: B01D61/00 ,  B01D71/68 ,  B01D61/02 ,  C02F1/44

    CPC classification number: C02F1/445 ,  B01D61/002 ,  B01D69/10 ,  B01D69/12 ,  B01D71/68 ,  B01D71/80 ,  B01D71/82 ,  B01D2311/25 ,  B01D2325/14 ,  B01D2325/16

    Abstract: A forward osmosis water treatment device using a separating membrane as a forward osmosis water treatment device which includes a polymer layer in which a function group having an osmosis draw solute inside an osmosis draw solution and chemical affinity is introduced is provided. The present invention relates to a forward osmosis water treatment device which includes a feed solution containing separation target materials; a osmosis draw solution receiving unit having osmosis concentration higher than that of the feed water; a first housing unit including a separation membrane arranged between the feed water receiving unit and the osmosis draw solution receiving unit; a second housing unit for storing the osmosis draw solution which supplies the osmosis draw solution to the first housing unit and recovers the osmosis draw solution; and a recovery device which separates and recovers the solute of the osmosis draw solution.

    Abstract translation: 提供一种使用分离膜作为正向渗透水处理装置的正向渗透水处理装置，其包括其中引入渗透吸收溶液内的渗透吸附溶质的功能基团和​​化学亲合力的聚合物层。 本发明涉及一种正向渗透水处理装置，其包括含有分离对象物质的进料溶液; 渗透浓度高于给水浓度的渗透液吸收单元; 第一壳体单元，其包括布置在给水接收单元和渗透液溶液接收单元之间的分离膜; 第二容纳单元，用于存储将渗透液溶液供应到第一壳体单元并回收渗透溶液的渗透液; 以及分离和回收渗透溶液的溶质的回收装置。

    금속 배선 형성방법
    10.
    发明授权
    금속 배선 형성방법 有权
    制备金属线的方法

    公开(公告)号：KR100847985B1

    公开(公告)日：2008-07-22

    申请号：KR1020070062182

    申请日：2007-06-25

    Applicant: 삼성전자주식회사

    Inventor： 송기용 ,  조성헌 ,  문준혁 ,  정창오 ,  닝홍롱

    IPC: G02F1/136

    CPC classification number: H01L27/1288 ,  G02F1/136286 ,  G02F2001/136295 ,  G02F2202/42 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H05K3/002 ,  H05K3/0041 ,  H05K3/048 ,  H05K3/107 ,  H05K3/184 ,  H05K3/388 ,  H05K2201/0166 ,  H05K2203/0565

    Abstract: A metal line forming method is provided to simplify the processes by means of a wet plating technique instead of a vacuum layer forming apparatus and to reduce the manufacturing cost. A dielectric layer(31) is deposited on the upper portion of a substrate(30). A potential mask pattern made of a metal line is formed on the upper portion of the dielectric layer. The dielectric layer exposed by the potential mask pattern is etched. Thereafter, the substrate is activated so that a sheet layer(32) is formed on the surface thereof. The potential mask pattern and the upper portion thereof are removed by a lift off manner. A metal layer(33) is formed on the upper portion of a seed layer formed as a pattern. The substrate is made of materials selected from a group consisting of silicon wafer, glass, indium stone oxide, mica, black lead, molybdenum sulfide, copper, zinc, aluminum, stainless, magnesium, iron, nickel, gold, silver, polyimide, polyester, polycarbonate, acryl resin of plastic substrate.

    Abstract translation: 提供金属线形成方法，以通过湿式电镀技术代替真空层形成装置简化工艺，并降低制造成本。 介电层（31）沉积在衬底（30）的上部。 在电介质层的上部形成由金属线构成的电位掩模图形。 蚀刻由电位掩模图案曝光的电介质层。 此后，基板被激活，使得在其表面上形成片层（32）。 通过剥离方式去除电位掩模图案及其上部。 金属层（33）形成在形成为图案的种子层的上部。 基板由选自硅晶片，玻璃，氧化铟锡，云母，黑铅，硫化钼，铜，锌，铝，不锈钢，镁，铁，镍，金，银，聚酰亚胺，聚酯等的材料制成 ，聚碳酸酯，丙烯酸树脂的塑料基材。

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