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    구리 전해 도금액, 구리 도금 장치 및 이를 이용한 구리 범프 형성 방법
    4.
    发明公开
    구리 전해 도금액, 구리 도금 장치 및 이를 이용한 구리 범프 형성 방법 审中-实审
    铜电镀解决方案，铜电镀设备及其在电镀设备中形成半导体芯片的铜保护膜的方法

    公开(公告)号：KR1020140092626A

    公开(公告)日：2014-07-24

    申请号：KR1020130004909

    申请日：2013-01-16

    Applicant: 삼성전자주식회사 ,  가부시키가이샤 아데카

    Inventor： 박명범 ,  강윤덕 ,  김기현 ,  조윤정 ,  최정식 ,  아리에토모코 ,  모리시마유지 ,  우선아 ,  토요다쇼헤이 ,  김범준 ,  즈시타케히로 ,  요시이타카히로 ,  타나카신이치

    IPC: C25D3/38 ,  C25D7/12

    CPC classification number: C25D3/38 ,  C25D5/04 ,  C25D5/08 ,  C25D17/001 ,  C25D17/06 ,  C25D21/14

    Abstract: The present invention relates to a copper electroplating solution, a copper electroplating apparatus, and a method for forming a copper bump. According to the present invention, the copper electroplating solution comprises: an electrolyte aqueous solution containing water soluble copper salt, sulfide ions, and chloride ions; an accelerator, which is an organic matter containing sulfur, for accelerating copper reduction reaction; an inhibitor, which is a polyester compound, for inhibiting copper reduction reaction; and a leveler containing water soluble polymer having nitrogen dissolved as a cation in the electrolyte aqueous solution. In a plating process, the leveler supplies a nitrogen cation, and so, the local increase of current density is inhibited. The plating rate can be increased without damage to the flatness of the copper bump.

    Abstract translation: 铜电镀液，铜电镀装置及铜凸点的形成方法技术领域本发明涉及铜电镀液，铜电镀装置及铜凸点的形成方法。 根据本发明，铜电镀液包括：含有水溶性铜盐，硫化物离子和氯离子的电解质水溶液; 加速剂，其是含硫的有机物质，用于加速铜还原反应; 用于抑制铜还原反应的抑制剂，其为聚酯化合物; 以及含有溶解在电解质水溶液中作为阳离子的氮的水溶性聚合物的矫直机。 在电镀过程中，矫平机提供氮阳离子，因此电流密度的局部增加被抑制。 可以增加电镀速率而不损坏铜凸块的平坦度。

    구리 도금용 조성물 및 이를 이용한 구리 범프 형성 방법
    6.
    发明公开
    구리 도금용 조성물 및 이를 이용한 구리 범프 형성 방법 无效
    用于镀铜的组合物和使用其形成铜箔的方法

    公开(公告)号：KR1020120088124A

    公开(公告)日：2012-08-08

    申请号：KR1020110009251

    申请日：2011-01-31

    Applicant: 삼성전자주식회사

    Inventor： 박명범 ,  김기현 ,  최정식 ,  이정호

    IPC: C25D3/38 ,  C25D5/02 ,  H01L21/60

    CPC classification number: C25D3/38 ,  C25D5/08 ,  C25D17/001 ,  H01L21/4846 ,  H01L21/4853 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81192 ,  H01L2924/01047 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: PURPOSE: A composition for copper plating and a copper bump forming method using the same are provided to reduce the surface roughness of a bump by adding an accelerant and electrolyte aqueous solution of proper concentration and to form an even top surface. CONSTITUTION: A composition for copper plating comprises electrolyte aqueous solution, an accelerant, an inhibitor, and a leveler. The electrolyte aqueous solution comprises a soluble copper salt, sulfuric acid, and hydrochloric acid. The accelerant has a concentration of 20 to 60ppm and comprises a disulfide compound. The inhibitor has a concentration of 40 to 100ppm and a molecular weight of 300 to 10,000. A content of ethylene oxide is 1 to 99%. The inhibitor comprises a tri-block copolymer of PEO(Polyethylene Oxide)-PPO(Polypropylene Oxide)-PEO. The leveler has a concentration of 0.01 to 100ppm and comprises arylate polyethylenemine.

    Abstract translation: 目的：提供一种用于镀铜的组合物和使用其的铜凸块形成方法，通过添加适当浓度的促进剂和电解质水溶液并形成均匀的顶表面来降低凸块的表面粗糙度。 构成：用于镀铜的组合物包括电解质水溶液，促进剂，抑制剂和矫正剂。 电解质水溶液包含可溶性铜盐，硫酸和盐酸。 促进剂的浓度为20至60ppm，并包含二硫化物。 抑制剂的浓度为40〜100ppm，分子量为300〜10,000。 环氧乙烷的含量为1〜99％。 抑制剂包括PEO（聚环氧乙烷）-PPO（聚丙烯氧化物）-PEO的三嵌段共聚物。 矫平剂的浓度为0.01〜100ppm，并含有芳基化聚乙烯亚胺。

    오믹 콘택막의 형성방법 및 이를 이용한 반도체 장치의금속배선 형성방법
    7.
    发明公开
    오믹 콘택막의 형성방법 및 이를 이용한 반도체 장치의금속배선 형성방법 无效
    制造OHMIC接触层的方法和使用其制造半导体器件的金属线的方法

    公开(公告)号：KR1020090095270A

    公开(公告)日：2009-09-09

    申请号：KR1020080020510

    申请日：2008-03-05

    Applicant: 삼성전자주식회사

    Inventor： 박명범 ,  이기학 ,  김현수 ,  이은옥 ,  조규철 ,  최정식 ,  김병희 ,  김대용

    IPC: H01L21/28 ,  H01L21/24

    CPC classification number: H01L21/28556 ,  C23C16/18 ,  H01L21/28562 ,  H01L21/76843

    Abstract: A metal wiring forming method of a semiconductor device and a formation method thereof using the same having the uniform thickness in which the conductive pattern and department reaction does not occur are provided to form ohmic contact layer of uniform thickness by using metal organic precursor. An organic metal precursor is provided on a substrate(120) including a conductive pattern including a silicon. The metallization process using the metal organic precursor is performed, a metal layer(128) is formed at the conductive region at the top of the substrate except for the premetal silicide film(127) and conductive pattern. The premetal silicide film on the conductive pattern is formed with the metal silicide layer. The metal organic precursor is the ethyl-cyclo penta enyl-cobalt-carbonyl(EtCpCo(CO)2), and the ethyl-cyclo, penta enyl-titanium - carbonyl or the ethyl - cyclo penta enyl- nickel-carbonyl.

    Abstract translation: 通过使用金属有机前体，设置半导体器件的金属布线形成方法及其形成均匀厚度均匀厚度的形成方法，其中导电图案和部分反应不发生。 在包括硅的导电图案的基板（120）上设置有机金属前体。 执行使用金属有机前体的金属化工艺，除了前金属硅化物膜（127）和导电图案之外，在基板顶部的导电区域处形成金属层（128）。 导电图案上的前金属硅化物膜由金属硅化物层形成。 金属有机前体是乙基 - 环戊烯基 - 钴 - 羰基（EtCpCo（CO）2）和乙基 - 环戊基 - 戊基 - 钛 - 羰基或乙基 - 环戊烯基 - 镍 - 羰基。

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