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公开(公告)号:KR1020140065771A
公开(公告)日:2014-05-30
申请号:KR1020120132476
申请日:2012-11-21
Applicant: 삼성전자주식회사
IPC: C23F1/30 , H01L21/302
CPC classification number: C09K13/06 , C23F1/26 , H01L21/02074 , H01L21/32134 , H01L21/76865 , H01L21/76883
Abstract: Provided are an etching composition, and a method for manufacturing a semiconductor device using the same. The etching composition comprises 1-7 wt% of hydrogen peroxide, 20-80 wt% of phosphoric acid, 0.001-1 wt% of amine or amide polymer, 0-55 wt% of sulfuric acid, and 10-45 wt% of deionized water. The etching composition is used for etching a metal film. The method for manufacturing a semiconductor device comprises: a step for forming a first metal film on a substrate; a step for forming a second metal film on the first metal film; a step for polishing the first and second metal films; and a step for cleaning the first and second metal films by using a cleaning solution which consists of the etching composition.
Abstract translation: 提供一种蚀刻组合物以及使用其的半导体器件的制造方法。 蚀刻组合物包含1-7重量%的过氧化氢,20-80重量%的磷酸,0.001-1重量%的胺或酰胺聚合物,0-55重量%的硫酸和10-45重量%的去离子 水。 蚀刻组合物用于蚀刻金属膜。 半导体器件的制造方法包括:在基板上形成第一金属膜的工序; 在第一金属膜上形成第二金属膜的步骤; 抛光第一和第二金属膜的步骤; 以及通过使用由蚀刻组合物构成的清洗溶液来清洗第一和第二金属膜的步骤。
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