公开(公告)号：KR1020150081397A

公开(公告)日：2015-07-14

申请号：KR1020140000881

申请日：2014-01-03

Applicant: 삼성전자주식회사

Inventor： 이마음 ,  박덕수 ,  왕먀오펑 ,  박운기 ,  정호준

IPC: H04N19/00

CPC classification number: H04N19/176 ,  H04N19/11 ,  H04N19/154 ,  H04N19/19 ,  H04N19/194 ,  H04N19/196

Abstract: 본발명은프레임메모리를포함하는디스플레이구동장치및 그것의데이터압축및 복원방법에관한것이다. 본발명의실시예에따른디스플레이구동칩은매크로블록과제 1 참조픽셀에기초하여최종모드정보와압축비트스트림을생성하고, 상기최종모드정보와상기압축비트스트림을이용하여최종비트스트림을생성하는인코딩유닛, 및상기최종비트스트림을저장하고저장된최종비트스트림을디코딩유닛으로제공하는프레임메모리를포함하고상기최종모드정보는선택픽셀의모드정보와비선택픽셀의복원참조값을포함한다.

Abstract translation: 显示驱动装置技术领域本发明涉及包括帧存储器和用于压缩和解压缩数据的方法的显示驱动装置。 根据本发明的一个实施例的显示驱动芯片包括：编码单元，用于基于宏块和第一参考像素生成最终模式信息和压缩比特流，并且通过使用最终模式信息来生成最终比特流;以及 压缩比特流; 以及用于存储最终比特流并用于将所存储的最终比特流提供给解码单元的帧存储器，其中最终模式信息包括所选择的像素的模式信息和未选择的像素的恢复的参考值。

公开(公告)号：KR1020080007020A

公开(公告)日：2008-01-17

申请号：KR1020060066498

申请日：2006-07-14

Applicant: 삼성전자주식회사

Inventor： 김형용 ,  이용범 ,  박운기 ,  차광호 ,  정혁진

IPC: H01J37/30

Abstract: An ion implantation system and an inter-lock method of the same are provided to detect an ion implantation error by setting a dual interlock condition to a mass analyzer. An ion implantation system includes a mass analyzer(1), a power supply unit(5), a control unit(10), and a current sensing unit(15). The power supply unit supplies current to the mass analyzer. The control unit is electrically connected to the power supply unit. The current sensing unit senses the current from the power supply unit to the mass analyzer and transmits information related to the sensed current to the control unit. The control unit compares the sensed current information with the reference current information in order to generate an inter-lock signal for interrupting an operation of ion implantation equipment.

Abstract translation: 提供了一种离子注入系统及其互锁方法，通过将双重互锁条件设置为质量分析器来检测离子注入误差。 离子注入系统包括质量分析器（1），电源单元（5），控制单元（10）和电流检测单元（15）。 电源单元向质量分析仪提供电流。 控制单元电连接到电源单元。 电流感测单元感测从电源单元到质量分析器的电流，并将与感测到的电流相关的信息发送到控制单元。 控制单元将感测到的当前信息与参考电流信息进行比较，以产生用于中断离子注入设备的操作的互锁信号。

公开(公告)号：KR1020010046541A

公开(公告)日：2001-06-15

申请号：KR1019990050338

申请日：1999-11-12

Applicant: 삼성전자주식회사

Inventor： 박운기

IPC: H01L21/265

Abstract: PURPOSE: A mass analyzer of an ion injection system is provided to prevent the ions deposited on the inside wall of the mass analyzer from operating as impurity in an ion injection process by protecting the inside wall on which unnecessary ions are deposited. CONSTITUTION: A mass analyzer(20) comprises an inlet flowing in ions and an outlet flowing out ions. The ions flowing into the inlet are generated in the source unit of an ion injection system, and the ions flowing out of the outlet are unnecessary ions selected by the mass analyzer(20). The outlet is a distance away from the inlet. A graphite layer(30) is formed on the inside wall of a connection unit connecting the inlet and the outlet by a certain thickness.

Abstract translation: 目的：提供离子注入系统的质量分析器，以防止沉积在质量分析器的内壁上的离子通过保护沉积不需要的离子的内壁而在离子注入过程中作为杂质操作。 构成：质量分析器（20）包括以离子流动的入口和流出离子的出口。 流入入口的离子在离子注入系统的源单元中产生，并且从出口流出的离子是质量分析器（20）选择的不需要的离子。 出口距离入口一定距离。 在将入口和出口连接一定厚度的连接单元的内壁上形成石墨层（30）。

公开(公告)号：KR1020080010094A

公开(公告)日：2008-01-30

申请号：KR1020060070126

申请日：2006-07-26

Applicant: 삼성전자주식회사

Inventor： 박경호 ,  박운기

IPC: H01L21/265 ,  H01L21/425

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/1472

Abstract: An ion implanter is provided to maximize a production yield by having a block unit to define the critical dimension of an ion beam expanded in one direction from an expansion unit. An ion implanter includes an ion source(102), a mass analyzer(104), an acceleration unit(106), an expansion unit(108), a block unit(122), and a chuck(120). The ion source generates a predetermined ion beam(100). The mass analyzer extracts the ion beam with predetermined mass from the ion beam. The acceleration unit accelerates the ion beam extracted from the mass analyzer. The expansion unit expands the ion beam accelerated in the acceleration unit in one direction. The block unit defines the critical dimension of the ion beam expanded in one direction from the expansion unit. The chuck grips a wafer vertically to the ion beam passing through the block unit.

Abstract translation: 提供离子注入机，以通过具有块单元来限定从膨胀单元沿一个方向膨胀的离子束的临界尺寸来最大化生产产量。 离子注入机包括离子源（102），质量分析器（104），加速单元（106），膨胀单元（108），块单元（122）和卡盘（120）。 离子源产生预定的离子束（100）。 质量分析仪从离子束中提取具有预定质量的离子束。 加速单元加速从质量分析器提取的离子束。 膨胀单元在一个方向上扩展在加速单元中加速的离子束。 块单元限定从膨胀单元沿一个方向膨胀的离子束的临界尺寸。 卡盘将晶片垂直地夹在通过块单元的离子束上。

公开(公告)号：KR1020030028897A

公开(公告)日：2003-04-11

申请号：KR1020010061188

申请日：2001-10-04

Applicant: 삼성전자주식회사

Inventor： 박운기

IPC: H01J37/30

Abstract: PURPOSE: An apparatus for measuring leakage current of a Faraday cup is provided to rapidly detect the leakage current, while preventing implantation of excessive ion beam. CONSTITUTION: An apparatus for measuring leakage current of a Faraday cup comprises a Faraday cup(25) mounted within an ion beam implantation device; a mask(31) surrounding the Faraday cup; an insulator interposed between the Faraday cup and the mask; a first current meter(29) mounted on a first grounding wire for connecting the Faraday cup and a grounding electrode; a second current meter(39) mounted on a second grounding wire for connecting the mask and the grounding electrode; a bias plate mounted at the entrance of the Faraday cup; and a comparator for generating a signal when the value measured by the first current meter and the second current meter is higher than a predetermined level.

Abstract translation: 目的：提供一种用于测量法拉第杯漏电流的装置，用于快速检测泄漏电流，同时防止过量离子束的植入。 构成：用于测量法拉第杯的泄漏电流的装置包括安装在离子束注入装置内的法拉第杯（25）; 围绕法拉第杯的面罩（31）; 介于法拉第杯和面罩之间的绝缘体; 第一电流表（29），安装在用于连接法拉第杯和接地电极的第一接地线上; 安装在用于连接掩模和接地电极的第二接地线上的第二电流计（39）; 安装在法拉第杯入口处的偏置板; 以及比较器，用于当由第一电流表和第二电流表测量的值高于预定电平时产生信号。

公开(公告)号：KR1019990069526A

公开(公告)日：1999-09-06

申请号：KR1019980003831

申请日：1998-02-10

Applicant: 삼성전자주식회사

Inventor： 박운기 ,  이채영

IPC: H01L21/265

Abstract: 웨이퍼 깨짐을 방지할 수 있는 이온주입 설비의 엘리베이터 어셈블리에 관해 개시한다. 이를 위해 본 발명은 이온주입 설비의 엘리베이터 어셈블리에서 제1 또는 제2 피봇 플레이트의 마주보는 일면에 근접 스위치를 구성하여 웨이퍼가 적재된 카세트를 로드락 챔버(loadlock chamber)로 로딩 또는 언로딩(unloading)할 때, 카세트에 적재된 웨이퍼가 깨지는 문제점을 방지한다.

公开(公告)号：KR1020000021292A

公开(公告)日：2000-04-25

申请号：KR1019980040308

申请日：1998-09-28

Applicant: 삼성전자주식회사

Inventor： 남영민 ,  박진영 ,  박운기 ,  박흥우

IPC: H01L21/265

Abstract: PURPOSE: A method for controlling an ion implanting process is provided to improve process efficiency by improving a recipe editing in a manual mode for successively performing stopped ion-implanting. CONSTITUTION: A control method comprises the steps of converting to a manual mode in mode menu when ion implantation process is stopped, selecting a recipe by temporary assigning the title of the recipe in the manual mode, editing the selected recipe using the information of processed ion implanting, and successive performing ion implantation process by using the edited recipe.

Abstract translation: 目的：提供一种用于控制离子注入过程的方法，通过改进用于连续进行停止离子注入的手动模式中的配方编辑来提高工艺效率。 规定：控制方法包括以下步骤：当离子植入过程停止时转换为模式菜单中的手动模式，通过在手动模式下临时分配配方的标题来选择配方，使用处理离子的信息编辑所选配方 植入和连续执行离子植入过程。

公开(公告)号：KR1020000021281A

公开(公告)日：2000-04-25

申请号：KR1019980040297

申请日：1998-09-28

Applicant: 삼성전자주식회사

Inventor： 박진영 ,  박흥우 ,  남영민 ,  박운기

IPC: H01L21/265

Abstract: PURPOSE: An ion implanter for fabricating semiconductor devices is provided easily implant exact quality of dose by using an adding mode and numerical input unit in a programmable logic controller. CONSTITUTION: An ion implanter includes a programmable logic controller. The programmable logic controller further comprises an adding mode and a numerical input unit. The adding mode and the numerical input unit helps to calculate the quantities of ion-implantation dose exactly and selectively. When the adding mode is selected, total dose quantity performed the ion-implantation is inputted by using the numerical input unit.

Abstract translation: 目的：提供一种用于制造半导体器件的离子注入机，通过在可编程逻辑控制器中使用添加模式和数字输入单元，可轻松植入精确的剂量质量。 构成：离子注入机包括可编程逻辑控制器。 可编程逻辑控制器还包括加法模式和数字输入单元。 添加模式和数字输入单元有助于精确和有选择地计算离子注入剂量。 当选择添加模式时，使用数字输入单元输入进行离子注入的总剂量。

公开(公告)号：KR1019980072567A

公开(公告)日：1998-11-05

申请号：KR1019970007469

申请日：1997-03-06

Applicant: 삼성전자주식회사

Inventor： 최선봉 ,  황종성 ,  이용승 ,  박운기

IPC: H01L21/02

Abstract: 본 발명은 저항 및 커넥터를 이용한 고전압 측정방법으로 고전압 측정시 안전사고의 예방 및 제조설비의 가동 효율성을 향상시킨 반도체 제조설비의 고전압 측정방법에 관한 것이다.
본 발명은, 공정수행시 가스를 공급하는 가스박스와 상기 가스박스를 밀폐시키는 엔클로즈사이의 전압을 측정하기 위한 반도체 제조설비의 고전압 측정방법에 있어서, 상기 가스박스와 엔클로즈사이에 저항을 연결시키고, 상기 저항을 외부의 커넥터에 연결시켜 상기 커넥터로 인가되는 전압을 측정하여 이루어짐을 특징으로 한다.
따라서, 제조설비의 고전압 측정시 안전사고를 미연에 방지할 수 있고, 또한 제조설비의 효율성이 향상되는 효과가 있다.