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公开(公告)号：KR1020080007020A
公开(公告)日：2008-01-17
申请号：KR1020060066498
申请日：2006-07-14
Applicant: 삼성전자주식회사
IPC: H01J37/30
Abstract: An ion implantation system and an inter-lock method of the same are provided to detect an ion implantation error by setting a dual interlock condition to a mass analyzer. An ion implantation system includes a mass analyzer(1), a power supply unit(5), a control unit(10), and a current sensing unit(15). The power supply unit supplies current to the mass analyzer. The control unit is electrically connected to the power supply unit. The current sensing unit senses the current from the power supply unit to the mass analyzer and transmits information related to the sensed current to the control unit. The control unit compares the sensed current information with the reference current information in order to generate an inter-lock signal for interrupting an operation of ion implantation equipment.
Abstract translation: 提供了一种离子注入系统及其互锁方法，通过将双重互锁条件设置为质量分析器来检测离子注入误差。 离子注入系统包括质量分析器（1），电源单元（5），控制单元（10）和电流检测单元（15）。 电源单元向质量分析仪提供电流。 控制单元电连接到电源单元。 电流感测单元感测从电源单元到质量分析器的电流，并将与感测到的电流相关的信息发送到控制单元。 控制单元将感测到的当前信息与参考电流信息进行比较，以产生用于中断离子注入设备的操作的互锁信号。
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公开(公告)号：KR1020040081907A
公开(公告)日：2004-09-23
申请号：KR1020030016504
申请日：2003-03-17
Applicant: 삼성전자주식회사
IPC: H01L21/265
Abstract: PURPOSE: A cooling system for a scan generator controller of an ion implanter is provided to prevent damage of the scan generator controller by forming a plurality of cooling parts in the scan generator controller. CONSTITUTION: A scan generator controller(200) includes a plurality of cooling parts inner and outer of the scan generator controller. The cooling parts are spaced apart from each other. The cooling parts are provided with a heat sink(220) and a cooling fan(230) attached to the heat sink. The scan generator controller further includes a temperature sensor(240).
Abstract translation: 目的：提供一种用于离子注入机的扫描发生器控制器的冷却系统，以通过在扫描发生器控制器中形成多个冷却部件来防止扫描发生器控制器的损坏。 构成：扫描发生器控制器（200）包括扫描发生器控制器内部和外部的多个冷却部件。 冷却部件彼此间隔开。 冷却部件设置有散热器（220）和连接到散热器的冷却风扇（230）。 扫描发生器控制器还包括温度传感器（240）。
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公开(公告)号：KR1020030064563A
公开(公告)日：2003-08-02
申请号：KR1020020004901
申请日：2002-01-28
Applicant: 삼성전자주식회사
IPC: G01C9/24
Abstract: PURPOSE: A horizontal state measuring apparatus is provided to adjust a horizontal state of a plate supporting a semiconductor substrate by using a pair of bubble tube levels and first and second notch marks. CONSTITUTION: A horizontal state measuring apparatus(100) includes a body(102) having a rectangular plate shape. First and second bubble tube levels(104,106) are accommodated in the body(102) in perpendicular to each other. A first notch mark(108) is formed at an upper surface of the body(102) in order to measure a bubble position of the first bubble tube level(104). A second notch mark(110) is formed at one side of the body in order to measure a horizontal state and height of a handler used for resting a semiconductor substrate on a plate provided in a semiconductor processing device. First and second windows are formed on the upper surface of the body(102).
Abstract translation: 目的：提供水平状态测量装置，通过使用一对气泡管水平和第一和第二缺口标记来调节支撑半导体衬底的板的水平状态。 构成：水平状态测量装置（100）包括具有矩形板形状的主体（102）。 第一和第二气泡管水平面（104,106）彼此垂直地容纳在主体（102）中。 为了测量第一气泡管水平面（104）的气泡位置，在主体（102）的上表面上形成第一刻痕（108）。 为了测量用于将半导体衬底固定在设置在半导体处理装置中的板上的处理器的水平状态和高度，形成在主体的一侧的第二缺口标记（110）。 第一窗口和第二窗口形成在主体（102）的上表面上。
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公开(公告)号：KR1020120034387A
公开(公告)日：2012-04-12
申请号：KR1020100095926
申请日：2010-10-01
Applicant: 삼성전자주식회사
IPC: H01L21/8238 , H01L21/336 , H01L29/78
CPC classification number: H01L29/7848 , H01L21/26506 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L21/823807 , H01L21/823814 , H01L27/11 , H01L29/66636 , H01L29/78 , H01L21/8238
Abstract: PURPOSE: A method for fabricating a semiconductor device and a semiconductor device fabricated using the same are provided to form compressive stress on a channel region of a PMOS(P type Metal Oxide Semiconductor) transistor by forming a SiGe(Silicon Germanium) layer in a trench after the trench is formed in source/drain regions of a PMOS transistor. CONSTITUTION: A first area(I) and a second area(II) defined in substrates(100,200). A plurality of first gates(110) separated into a first pitch is formed on the first area. A plurality of second gates(210) separated into a second pitch is formed on the second area. A first gate insulating layer(112) is formed between the first gate and the substrate. A second gate insulating layer(212) is formed between the second gate and the substrate.
Abstract translation: 目的：提供一种用于制造半导体器件的方法和使用该半导体器件制造的半导体器件，以通过在沟槽中形成SiGe（硅锗）层来在PMOS（P型金属氧化物半导体）晶体管的沟道区上形成压应力 之后在PMOS晶体管的源极/漏极区域中形成沟槽。 构成：在基板（100,200）中定义的第一区域（I）和第二区域（II）。 在第一区域上形成分离成第一间距的多个第一栅极（110）。 在第二区域上形成分离成第二间距的多个第二栅极（210）。 在第一栅极和衬底之间形成第一栅极绝缘层（112）。 在第二栅极和衬底之间形成第二栅极绝缘层（212）。
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公开(公告)号：KR1020030046113A
公开(公告)日：2003-06-12
申请号：KR1020010076517
申请日：2001-12-05
Applicant: 삼성전자주식회사
Inventor： 김형용
IPC: B25F5/00
Abstract: PURPOSE: A tool for exchanging parts is provided to easily and quickly exchange parts with a vacuum measuring device by forming the tool with a nonmagnetic body. CONSTITUTION: A tool(100) exchanges the cathode(220) in a device composed of a cylindrical body(200), and the cathode installed in the body. The device is covered by magnet(210). The tool is composed of a handle(110), and a shaft(120) installed at the handle and having a coupling unit(130) coupled with the cathode. The shaft is made of a nonmagnetic body not to be affected by the magnet.
Abstract translation: 目的：提供一种用于更换零件的工具，通过用非磁性体形成工具，轻松快速地与真空测量装置更换零件。 构成：工具（100）在由圆柱体（200）构成的装置中，并且阴极安装在体内，交换阴极（220）。 该装置被磁体（210）覆盖。 工具由手柄（110）和安装在手柄处的轴（120）组成，并具有与阴极耦合的联接单元（130）。 轴由不受磁体影响的非磁性体制成。
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Patent Agency Ranking
公开(公告)号：KR1020010093474A
公开(公告)日：2001-10-29
申请号：KR1020000016111
申请日：2000-03-29
Applicant: 삼성전자주식회사
Inventor： 김형용
IPC: H01L21/265
Abstract: PURPOSE: An improved ion implanting equipment is provided to prevent a high voltage arcing and a damage of a tube by installing an insulation shielding unit in an exhaust tube hole. CONSTITUTION: The ion implanting equipment comprises a housing(10) and a terminal(12) formed in the housing(10). The housing(10) and the terminal(12) are isolated each other via an insulator. A gas box(14) and a pump(16) is located in the terminal(12). The gases existed in the terminal(12) are exhausted by the pump(16) through an exhaust tube(20) passing the terminal(12) and the housing(10). Isolation shielding units(22a,22b) are installed in hole portions of the exhaust tube(20) passed the housing(10) and the terminal(12), respectively.
Abstract translation: 目的：提供改进的离子注入设备，通过在排气管孔中安装绝缘屏蔽单元来防止高压电弧和管损坏。 构成：离子注入设备包括壳体（10）和形成在壳体（10）中的端子（12）。 壳体（10）和端子（12）经由绝缘体彼此隔离。 气体箱（14）和泵（16）位于端子（12）中。 存在于端子（12）中的气体通过泵（16）通过通过端子（12）和壳体（10）的排气管（20）排出。 隔离屏蔽单元（22a，22b）分别安装在通过壳体（10）和端子（12）的排气管（20）的孔部分中。
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公开(公告)号：KR101797964B1
公开(公告)日：2017-11-15
申请号：KR1020100095926
申请日：2010-10-01
Applicant: 삼성전자주식회사
IPC: H01L21/8238 , H01L21/336 , H01L29/78
CPC classification number: H01L29/7848 , H01L21/26506 , H01L21/30608 , H01L21/3065 , H01L21/823412 , H01L21/823425 , H01L21/823807 , H01L21/823814 , H01L27/11 , H01L29/66636 , H01L29/78
Abstract: 반도체장치의제조방법및 그방법으로제조된반도체장치가제공된다. 상기반도체장치의제조방법의일 태양은제1 영역과제2 영역이정의된기판을제공하고, 제1 영역에제1 피치로이격된다수의제1 게이트를형성하고, 제2 영역에제1 피치와다른제2 피치로이격된다수의제2 게이트를형성하고, 제1 영역은블로킹하고제2 영역에식각율조정도펀트를임플란트하고, 다수의제1 게이트사이의제1 영역을식각하여제1 트렌치를형성하고, 다수의제2 게이트사이의제2 영역을식각하여제2 트렌치를형성하는것을포함한다.
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公开(公告)号：KR101575818B1
公开(公告)日：2015-12-08
申请号：KR1020090075968
申请日：2009-08-18
Applicant: 삼성전자주식회사
IPC: H01L21/308 , H01L21/027
CPC classification number: H01L21/308 , H01L21/76229 , H01L27/0207 , H01L27/1052 , H01L27/10894 , H01L27/11526
Abstract: 활성영역구조물의형성방법을제공한다. 이를위해서, 반도체기판이준비될수 있다. 상기반도체기판은셀 어레이영역및 주변회로영역을갖는다. 상기셀 어레이영역의반도체기판에예비활성영역이형성될수 있다. 상기예비활성영역에활성영역이형성될수 있다. 상기주변회로영역의반도체기판에주변활성영역이형성될수 있다. 상기주변활성영역은예비활성영역또는활성영역과함께형성될수 있다.
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公开(公告)号：KR1020050105846A
公开(公告)日：2005-11-08
申请号：KR1020040031120
申请日：2004-05-03
Applicant: 삼성전자주식회사
Inventor： 김형용
IPC: H01L21/68
CPC classification number: H01L21/67742 , B25J11/0095 , H01L21/67259
Abstract: 웨이퍼 이송 장치를 제공한다. 이 장치는 적어도 한개의 로드락 챔버, 복수개의 로드 포트들, 웨이퍼 이송 로봇 및 상기 웨이퍼 이송 로봇의 위치를 감지하는 센서들을 구비한다. 이때, 상기 웨이퍼 이송 로봇은 상기 로드락 챔버와 상기 로드 포트들 사이에 배치되어 웨이퍼 이송 작업을 수행한다. 상기 웨이퍼 이송 로봇 및 상기 센서들에는 전자적으로 연결된 제어기가 더 배치되어, 상기 웨이퍼 이송 로봇의 운동 및 상기 센서의 동작을 제어한다.
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公开(公告)号：KR1020040099860A
公开(公告)日：2004-12-02
申请号：KR1020030031988
申请日：2003-05-20
Applicant: 삼성전자주식회사
IPC: H01J37/30
Abstract: PURPOSE: An ion implantation apparatus is provided to monitor whether suppression voltage is normally supplied or not by installing a suppression voltage monitoring contactor in a deceleration bar in addition to a suppression voltage output contactor. CONSTITUTION: An ion implantation apparatus includes a source part(300), an ion beam line part(400), a deceleration suppression supply contactor(140), and a deceleration suppression monitor contactor(150). The source part generates ions to be doped into the wafer. The ion beam line part includes an acceleration column(200) for accelerating or decelerating the generated ions. The deceleration suppression supply contactor supplies a deceleration suppression voltage to the acceleration column. The deceleration suppression monitor contactor monitors the deceleration suppression voltage. The deceleration suppression supply contactor and the deceleration suppression monitor contactor simultaneously come into contact with the acceleration columns and electrically connected to a deceleration suppression power supply part(600).
Abstract translation: 目的：提供一种离子注入装置，用于通过在抑制电压输出接触器之外将抑制电压监视接触器安装在减速杆中来监视抑制电压是否正常供电。 构成：离子注入装置包括源部（300），离子束线部（400），减速抑制供给接触器（140）和减速抑制监视接触器（150）。 源部分产生要掺杂到晶片中的离子。 离子束线部分包括用于加速或减速所产生的离子的加速度柱（200）。 减速抑制电源接触器向加速度列提供减速抑制电压。 减速抑制监视接触器监控减速抑制电压。 减速抑制电源接触器和减速抑制监视器接触器同时与加速度柱接触并与减速抑制电源部件600电连接。
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