公开(公告)号：KR1020080049160A

公开(公告)日：2008-06-04

申请号：KR1020060119419

申请日：2006-11-30

Applicant: 삼성전자주식회사

Inventor： 박제권 ,  임영규 ,  고재균 ,  이규 ,  장혜림

IPC: H01L21/027 ,  H01L21/66

CPC classification number: G03F7/7065 ,  H01L21/67288 ,  H01L22/12

Abstract: An inspection method and an inspection apparatus are provided to detect simultaneously a light beam having an ultraviolet wavelength band and a light beam having an extreme ultraviolet wavelength band. A light irradiation process is performed to irradiate light having continuous wavelength bands onto an inspection target(10). A light separation process is performed to separate selectively light beams having different wavelength bands from the light reflected on the inspection target. A detection process is performed to detect the light beams. The light beam having the ultraviolet wavelength band and the light beam having an extreme ultraviolet wavelength band are separated from the light reflected on the inspection target.

Abstract translation: 提供一种检查方法和检查装置，以同时检测具有紫外线波长带的光束和具有极紫外波长带的光束。 执行光照射处理以将具有连续波段的光照射到检查目标（10）上。 进行光分离处理，以从具有在检查对象上反射的光分离出具有不同波长带的光束。 执行检测处理以检测光束。 具有紫外线波长带的光束和具有极紫外波长带的光束与在检查对象物上反射的光分离。

公开(公告)号：KR1020070002249A

公开(公告)日：2007-01-05

申请号：KR1020050057666

申请日：2005-06-30

Applicant: 삼성전자주식회사

Inventor： 강규병 ,  박제권

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01N21/9501 ,  G01N2021/8854 ,  G01N2021/8887

Abstract: A wafer defect detecting method is provided to detect exactly real defects alone by using the image of a reference wafer as a reference image in case of the generation of an abnormal color difference between an obtained image and a reference image. An image is obtained from an object wafer(S100). Defects are detected by comparing the obtained image with a reference image. When a color difference between the obtained image and the reference image is in an aiming range, the obtained image is set as a new reference image(S150). Defects are detected from another object wafer by using the new reference image.

Abstract translation: 提供晶片缺陷检测方法，以便在获得的图像和参考图像之间产生异常色差的情况下，通过使用参考晶片的图像作为参考图像来单独检测真实缺陷。 从对象晶片获得图像（S100）。 通过将获得的图像与参考图像进行比较来检测缺陷。 当获得的图像和参考图像之间的色差处于瞄准范围时，将所获得的图像设置为新的参考图像（S150）。 通过使用新的参考图像从另一个物体晶片检测缺陷。

公开(公告)号：KR1020050117803A

公开(公告)日：2005-12-15

申请号：KR1020040043031

申请日：2004-06-11

Applicant: 삼성전자주식회사

Inventor： 박제권 ,  강규병

IPC: H01L21/66

CPC classification number: G01N21/8851 ,  G01N2021/8887

Abstract: 웨이퍼 상에 형성된 칩을 다수의 영역으로 구분하기 위한 칩 영역 구분 방법에서는 상기 칩의 그레이 레벨 이미지 또는 칼라 이미지를 각각 획득한다. 상기 이미지를 픽셀 단위로 분할하고, 상기 분할된 픽셀들의 그레이 레벨, 명암 또는 문턱값 등의 정보를 분석한다. 상기 분석 결과를 이용하여 상기 칩을 셀 영역 또는 주변 영역 등의 다수 영역으로 구분한다. 따라서 상기 칩의 영역을 신속하고 정확하게 구분할 수 있다.

公开(公告)号：KR100823698B1

公开(公告)日：2008-04-21

申请号：KR1020070019793

申请日：2007-02-27

Applicant: 삼성전자주식회사

Inventor： 고재균 ,  임영규 ,  박제권 ,  김현희 ,  이규

IPC: H01L21/66

CPC classification number: G06T7/0004 ,  G01N21/95607 ,  G06T2207/30148 ,  G06T2207/30204

Abstract: An identification mark inspecting method is provided to almost avoid generation of an additional time interval by inspecting a defect of an identification mark formation region while using an image obtained for inspecting whether an identification mark is read. The image of an identification mark formed on a wafer is obtained(S110). The identification mark is read by using the image of the identification mark(S120). When the identification mark is read, a region where the identification mark is formed is inspected by using the image of the identification mark(S130). Whether the identification mark is read is determined according as the identification marks of the image are compared with predetermined reference identification marks and every reference identification mark match one of the reference identification marks.

Abstract translation: 提供识别标记检查方法，以便在使用为检查识别标记是否被读取而获得的图像时，通过检查识别标记形成区域的缺陷来几乎避免产生额外的时间间隔。 获得形成在晶片上的识别标记的图像（S110）。 通过使用识别标记的图像来读取识别标记（S120）。 当读取识别标记时，通过使用识别标记的图像检查形成识别标记的区域（S130）。 根据图像的识别标记与预定的参考识别标记进行比较确定识别标记是否被读取，并且每个参考识别标记与参考识别标记中的一个相匹配。

公开(公告)号：KR1020060132081A

公开(公告)日：2006-12-21

申请号：KR1020050052194

申请日：2005-06-17

Applicant: 삼성전자주식회사

Inventor： 강규병 ,  박제권

IPC: H01L21/66

CPC classification number: G01N21/9501 ,  G01N21/8806 ,  G01N2021/8848

Abstract: An apparatus for detecting a defect of a wafer is provided to detect noise-reduced light from a detection unit by changing a polarizing axis by rotating a polarizing filter. A light source(120) is used for irradiating light onto a wafer in order to detect a defect of the wafer. A detection unit(130) detects the light reflected from the wafer or the light scattered from the wafer. A polarizing filter(140,160) is installed between the wafer and the detection unit in order to be positioned vertically to the scattered light or the reflected light. The polarizing filter is used for filtering the reflected light or the scattered light in order to convert the reflected light or the scattered light to the polarizing light. A control unit(150,170) controls an incident angle of the polarizing light in order to enhance a filtering effect of the reflected light or the scattered light.

Abstract translation: 提供了一种用于检测晶片缺陷的装置，用于通过旋转偏振滤光器来改变偏振轴来检测来自检测单元的降噪光。 光源（120）用于将光照射到晶片上以便检测晶片的缺陷。 检测单元（130）检测从晶片反射的光或从晶片散射的光。 偏振滤光器（140,160）安装在晶片和检测单元之间，以便垂直于散射光或反射光定位。 偏振滤光器用于对反射光或散射光进行滤光，以将反射光或散射光转换成偏振光。 控制单元（150,170）控制偏振光的入射角，以增强反射光或散射光的过滤效果。