公开(公告)号：KR1020060127500A

公开(公告)日：2006-12-13

申请号：KR1020050048523

申请日：2005-06-07

Applicant: 삼성전자주식회사

Inventor： 박종희 ,  김기석 ,  백종민 ,  황현철

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  H01L21/67011

Abstract: A semiconductor device having a shower head is provided to prevent gas leakage by preventing a shock among a nozzle, a nozzle pipe, and a gasket. A shower head-base(120) includes a nozzle(122) and at least one guide pin(124). The nozzle protrudes from a center portion of one surface of the shower head-base. The at least one guide pin is protruded from an edge of one surface of the shower head-base. A shower head(130) includes a nozzle pipe(132) and a guide hole(134). The nozzle pipe engages with the nozzle. The guide hole engages with the guide pin. The shower head further includes a gasket. The nozzle is mounted to the nozzle pipe through the gasket. A process chamber has a space in which a process is performed. A chuck is arranged inside the process chamber, and a wafer is loaded on the chuck. The shower head-base is arranged at an upper portion of the chuck.

Abstract translation: 提供具有喷头的半导体装置，通过防止喷嘴，喷嘴管和垫圈之间的冲击来防止气体泄漏。 喷头（120）包括喷嘴（122）和至少一个引导销（124）。 喷嘴从喷淋头基座的一个表面的中心部分突出。 所述至少一个引导销从所述淋浴头基座的一个表面的边缘突出。 喷头（130）包括喷嘴管（132）和引导孔（134）。 喷嘴管与喷嘴接合。 引导孔与引导销啮合。 淋浴头还包括垫圈。 喷嘴通过垫圈安装到喷嘴管上。 处理室具有进行处理的空间。 卡盘位于处理室的内部，晶片装载在卡盘上。 淋浴头基座设置在卡盘的上部。

公开(公告)号：KR1020070006521A

公开(公告)日：2007-01-11

申请号：KR1020050061925

申请日：2005-07-08

Applicant: 삼성전자주식회사

Inventor： 박종희 ,  이승배 ,  김기석 ,  백종민 ,  양성은 ,  진성현 ,  황현철

IPC: H01L21/205

CPC classification number: C23C16/46 ,  H01L21/67248

Abstract: A thermocouple connection apparatus of CVD equipment for fabricating a semiconductor device is provided to prevent thermocouple from being damaged and eliminate the necessity of replacing a heater by varying a coupling structure of a connection port and a thermocouple guide bar to which a thermocouple is fixed wherein the connection part protrudes from a side of the lower part of the heater. A connection port(170) is formed under a heater(45), having a first thermocouple insertion hole(178) into which a thermocouple(210) for detecting the temperature of the heater is inserted. A thermocouple guide bar(180) is connected to the connection part, having a second thermocouple insertion hole(188) into which the thermocouple is inserted. The connection part is connected to the thermocouple guide bar by a coupling member(190). A fix unit for fixing the thermocouple is formed on the thermocouple guide bar.

Abstract translation: 提供了用于制造半导体器件的CVD设备的热电偶连接装置，以防止热电偶被损坏，并且消除了通过改变连接端口和固定有热电偶的热电偶引导杆的耦合结构来更换加热器的必要性，其中， 连接部从加热器的下部侧突出。 连接端口（170）形成在加热器（45）下方，具有第一热电偶插入孔（178），用于检测加热器温度的热电偶（210）插入其中。 热电偶引导杆（180）连接到连接部分，具有插入热电偶的第二热电偶插入孔（188）。 连接部分通过联接构件（190）连接到热电偶引导杆。 用于固定热电偶的固定单元形成在热电偶导杆上。

公开(公告)号：KR1020070066626A

公开(公告)日：2007-06-27

申请号：KR1020050128020

申请日：2005-12-22

Applicant: 삼성전자주식회사

Inventor： 김기석 ,  이승배 ,  백종민 ,  박종희

IPC: H01L21/205

CPC classification number: C23C16/45565 ,  C23C16/52

Abstract: A shower head of a CVD apparatus is provided to avoid a gas leakage by including a built-in coupling member for coupling a first gas supply line to the middle plate and by including a plurality of sealing members for vertically and horizontally sealing the coupling member. First and second gas supply lines(108,118) supply different first and second reaction gases to a process chamber. A base plate(102) is coupled to the upper surface of the process chamber that a second gas supply line penetrates. A first gas supply path is formed in the base plate so that the first reaction gas is supplied from the first gas supply line to the process chamber. A middle plate(104) is coupled to the lower surface of the base plate. A gas supply space for supplying the second reaction gas between the base plates is formed in a middle plate, penetrating the first gas supply path to be connected to the first gas supply line. The middle plate also forms first and second gas supply paths to which the first and second reaction gases are separately supplied. The first gas supply line is coupled to a supply path of the first reaction gas extended from the first gas supply path of the middle plate by a coupling member(120). A low plate(106) includes first and second gas discharge holes connected to the first and second gas supply paths for supplying the first and second reaction gases to the inside of the process chamber.

Abstract translation: 提供了一种CVD装置的淋浴头，以通过包括用于将第一气体供应管线联接到中间板的内置联接构件并且包括用于垂直和水平地密封联接构件的多个密封构件来避免气体泄漏。 第一和第二气体供应管线（108,118）向处理室供应不同的第一和第二反应气体。 底板（102）联接到处理室的上表面，第二气体供应管线穿透。 第一气体供给路径形成在基板中，使得第一反应气体从第一气体供给管线供给到处理室。 中间板（104）联接到基板的下表面。 用于在基板之间供应第二反应气体的气体供给空间形成在穿过要连接到第一气体供给管线的第一气体供给路径的中间板中。 中间板还形成第一和第二气体供应路径，第一和第二反应气体被单独供应到路径。 第一气体供应管线通过联接构件（120）联接到从中间板的第一气体供应路径延伸的第一反应气体的供应路径。 低板（106）包括连接到第一和第二气体供应路径的第一和第二气体排出孔，用于将第一和第二反应气体供应到处理室的内部。

公开(公告)号：KR1020060109741A

公开(公告)日：2006-10-23

申请号：KR1020050032045

申请日：2005-04-18

Applicant: 삼성전자주식회사

Inventor： 박종희 ,  이승배 ,  백종민 ,  황현철

IPC: H01L21/205

CPC classification number: C23C16/45572 ,  C23C16/45565

Abstract: A process chamber of a semiconductor manufacturing apparatus is provided to prevent discoloration of a shower head due to high temperature by employing a cooling member. A body(112) whose upper surface is opened has a space therein. A cover(114) opens and shuts the opened upper surface of the body. A susceptor(130) on which a substrate is positioned is installed in the body. A shower head(120) is installed on the cover to be opposite to the susceptor. The shower head has spray holes for spraying gas onto the substrate. A cooling member(150) lowers temperature of the cover. The cooling member includes a coolant supplying unit(152) and a spraying nozzle. The spraying nozzle receives the coolant from the coolant supplying unit to spray it around the cover.

Abstract translation: 半导体制造装置的处理室被设置为通过采用冷却构件来防止由于高温导致的喷淋头的变色。 其上表面打开的主体（112）在其中具有空间。 盖（114）打开并关闭身体的敞开的上表面。 其上放置有基材的感受器（130）安装在主体中。 淋浴头（120）安装在盖子上以与基座相对。 喷头具有用于将气体喷射到基板上的喷射孔。 冷却构件（150）降低盖的温度。 冷却构件包括冷却剂供给单元（152）和喷射喷嘴。 喷嘴从冷却剂供应单元接收冷却剂以将其喷洒在盖上。

公开(公告)号：KR101076454B1

公开(公告)日：2011-10-25

申请号：KR1020090034717

申请日：2009-04-21

Applicant: 삼성엔지니어링 주식회사 ,  삼성전자주식회사

Inventor： 황재동 ,  최병문 ,  박원일 ,  박종희 ,  이용우 ,  정인호 ,  이정자

IPC: C02F1/50 ,  C02F9/00 ,  B01D61/02 ,  C02F1/00

Abstract: 무기폐수재이용방법이개시된다. 개시된무기폐수재이용방법은무기폐수에스케일방지제를투입하는단계및 상기스케일방지제를함유하는무기폐수를분리막여과기에투입하는단계를포함한다.

公开(公告)号：KR1020100116015A

公开(公告)日：2010-10-29

申请号：KR1020090034717

申请日：2009-04-21

Applicant: 삼성엔지니어링 주식회사 ,  삼성전자주식회사

Inventor： 황재동 ,  최병문 ,  박원일 ,  박종희 ,  이용우 ,  정인호 ,  이정자

IPC: C02F1/50 ,  C02F9/00 ,  B01D61/02 ,  C02F1/00

CPC classification number: C02F1/50 ,  B01D61/02 ,  C02F1/002 ,  C02F9/00 ,  C02F2303/22

Abstract: PURPOSE: A method for recycling inorganic waste water is provided to lengthen lifetime of a separation membrane filtering device, thereby reducing waste water treatment time and waste water treatment costs. CONSTITUTION: A method for recycling inorganic waste water comprises the following steps. A scale preventing agent and a pH adjustment agent are added to inorganic waste water. The inorganic waste water is inputted to a separation membrane filtering device(20). The water filtered through the separation membrane filtering device is injected to a reverse osmosis membrane.

Abstract translation: 目的：提供一种回收无机废水的方法，延长分离膜过滤装置的使用寿命，从而减少废水处理时间和废水处理成本。 构成：回收无机废水的方法包括以下步骤。 将防垢剂和pH调节剂加入到无机废水中。 将无机废水输入到分离膜过滤装置（20）。 将通过分离膜过滤装置过滤的水注入反渗透膜。

公开(公告)号：KR1020080054643A

公开(公告)日：2008-06-19

申请号：KR1020060126759

申请日：2006-12-13

Applicant: 삼성전자주식회사

Inventor： 김기석 ,  박종희 ,  양성은 ,  진성현

IPC: H01L21/02

Abstract: Equipment for manufacturing a semiconductor device is provided to prevent a deposition error caused by cooling of a heater block which is connected with a terminal housing by equipping a coolant heating unit which heats the coolant as higher temperature than the room temperature. A reaction chamber(110) provides an independent space from outside. A shower head(120) sprays a predetermined reaction gas. A heater block(140) heats a wafer as a first temperature, and supports the wafer at the bottom of the reaction chamber. A power input line(150) is connected with the heater block within the reaction chamber from the outside of the reaction chamber, so as to heat the heater block. A terminal housing(160) is formed to protect the power input line. A coolant supply unit(170) supplies the coolant for cooling the power input line as a second temperature. A coolant heating unit(190) heats the coolant as a third temperature, and supplies the heated coolant to the terminal housing.

Abstract translation: 提供了一种用于制造半导体器件的设备，以防止通过装配将加热冷却剂的温度高于室温的冷却剂加热单元与与端子壳体连接的加热器块的冷却引起的沉积误差。 反应室（110）从外部提供独立的空间。 喷淋头（120）喷射预定的反应气体。 加热器块（140）作为第一温度加热晶片，并且在反应室的底部支撑晶片。 动力输入管线（150）从反应室的外部与反应室内的加热器块连接，以加热加热器块。 形成端子壳体（160）以保护电力输入线。 冷却剂供给单元（170）作为第二温度供给用于冷却电力输入线的冷却剂。 冷却剂加热单元（190）将冷却剂作为第三温度加热，并将加热的冷却剂供应到端子壳体。

公开(公告)号：KR1020070109078A

公开(公告)日：2007-11-15

申请号：KR1020060041578

申请日：2006-05-09

Applicant: 삼성전자주식회사

Inventor： 박종희 ,  김기석 ,  백종민 ,  황현철 ,  양성은 ,  진성현

IPC: H01L21/68

CPC classification number: H01L21/68735 ,  H01L21/67201 ,  H01L21/68742 ,  Y10S414/139 ,  Y10S414/141

Abstract: A load lock station for preventing a sliding state of a wafer is provided to prevent a breakdown of the wafer and a generation of particles by loading the wafer on a stable loading position. A load lock station includes a station having a place on which a wafer is loaded, and a wafer guide installed around the station in order to guide a loading position of the wafer and to prevent a sliding state of the wafer. The wafer guide has an inclined inside facing the wafer. The wafer guide is installed at a predetermined distance from an edge end of the wafer loaded on a normal loading position of the station. The station is formed with a first station(110) having two opposite station members facing each other to load left and right edges of a first wafer and a second station(120) for loading a second wafer. The wafer guide is formed with a first wafer guide(112) for guiding a loading operation of the first wafer and preventing a sliding state of the first wafer, and a second wafer guide(122) for guiding a loading operation of the second wafer and preventing a sliding state of the second wafer.

Abstract translation: 提供一种用于防止晶片滑动状态的负载锁定站，以通过将晶片载入稳定的装载位置来防止晶片的破坏和颗粒的产生。 负载锁定站包括具有装载晶片的位置的台站以及安装在工位周围的晶片引导件，以引导晶片的装载位置并防止晶片的滑动状态。 晶片引导件具有面向晶片的倾斜内部。 晶片引导件安装在距加载在工位的正常装载位置的晶片的边缘端预定的距离处。 该站形成有具有彼此面对的两个相对站构件的第一站（110），以加载第一晶片的左边缘和右边缘，以及用于加载第二晶片的第二站（120）。 晶片引导件形成有用于引导第一晶片的加载操作并防止第一晶片的滑动状态的第一晶片引导件（112）和用于引导第二晶片的加载操作的第二晶片引导件（122） 防止第二晶片的滑动状态。

公开(公告)号：KR1020060128081A

公开(公告)日：2006-12-14

申请号：KR1020050048947

申请日：2005-06-08

Applicant: 삼성전자주식회사

Inventor： 백종민 ,  김기석 ,  박종희 ,  황현철

IPC: H01L21/205

CPC classification number: C23C16/45563 ,  C23C16/4401 ,  H01L21/67017

Abstract: A pipe system and a semiconductor manufacturing apparatus are provided to prevent adhesion of a solid by-product. A pipe system includes a process chamber(110). A trap(130) removes a solid by-product included in exhaust gas from the process chamber. A first pipe(170a) connects a process chamber to the trap. A first heater encloses the first pipe. A second pipe connects a pump to the trap. At least one nozzle supplies gas in the first pipe through the first heater and the first pipe. At least one nozzle has a portion protruding into the interior of the pipe and is deflected toward the forward direction of the flow of the fluid in the interior of the first pipe, and the end of the nozzle and the deflected portion are located in the interior of the first pipe.

Abstract translation: 提供管道系统和半导体制造装置以防止固体副产物的粘附。 管道系统包括处理室（110）。 捕集器（130）除去来自处理室的废气中包含的固体副产物。 第一管（170a）将处理室连接到捕集器。 第一个加热器包围第一个管道。 第二根管将泵连接到陷阱。 至少一个喷嘴通过第一加热器和第一管道在第一管道中提供气体。 至少一个喷嘴具有突出到管内部的部分并且朝向第一管内部的流体流的向前方向偏转，并且喷嘴的端部和偏转部分位于内部 的第一根管子。