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公开(公告)号：KR102229206B1
公开(公告)日：2021-03-18
申请号：KR1020140041160A
申请日：2014-04-07
Applicant: 삼성전자주식회사
IPC: H01L21/768
CPC classification number: H01L23/5226 , H01L21/76802 , H01L21/7682 , H01L21/76843 , H01L21/76877 , H01L23/5222 , H01L23/528 , H01L23/53223 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L21/764 , H01L21/76816 , H01L21/76837 , H01L2924/00 , H01L2924/0002
Abstract: 본 발명은 반도체 장치 및 이의 제조 방법을 제공한다. 이 반도체 장치에서는 에어 갭 영역의 바로 위와 바로 아래에는 다른 에어 갭 영역이 존재하지 않아 기계적 특성이 향상될 수 있다.
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公开(公告)号：KR1020170065419A
公开(公告)日：2017-06-13
申请号：KR1020160015165
申请日：2016-02-05
Applicant: 삼성전자주식회사
IPC: H01L21/768 , H01L21/28 , H01L21/3205 , H01L21/311
Abstract: 반도체장치및 그제조방법이제공된다. 반도체장치의제조방법은, 기판상에형성된유전막에복수의그루브들(grooves)를형성하고, 유전막은복수의그루브들사이에위치한 IMD(Intermetal Dielectic)부를포함하고, 그루브들의각각의측면및 바닥면을따라제1 배리어막(barrier layer)을형성하고, 제1 배리어막상에인터커넥트막(interconnect layer)을형성하고, 인터커넥트막및 제1 배리어막을리세스하고, 리세스된인터커넥트막상에캐핑패턴(capping pattern)을형성하고, IMD부를제1 식각공정에의해식각하고, 이어서 IMD부를캐핑패턴과함께제2 식각공정에의해식각하여, 트렌치를형성하고, 트렌치의측면및 바닥면을따라제2 배리어막을컨포말(conformal)하게형성하는것을포함한다.
Abstract translation: 提供了一种半导体器件及其制造方法。 一种制造半导体器件的方法包括：在形成在衬底上的介电膜中形成多个沟槽，所述介电膜包括位于所述多个沟槽之间的IMD（金属间介电体）部分， 沿第一阻挡膜形成第一阻挡层;在第一阻挡膜上形成互连层;使互连膜和第一阻挡膜凹陷;以及在凹陷互连膜上形成覆盖图案。 通过第一蚀刻工艺蚀刻所述IMD部分，接着通过第二蚀刻工艺用覆盖图案蚀刻所述IMD部分以形成沟槽并且沿着所述沟槽的侧表面和底表面形成第二阻挡膜， 保形。
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公开(公告)号：KR1020160067349A
公开(公告)日：2016-06-14
申请号：KR1020140172618
申请日：2014-12-04
Applicant: 삼성전자주식회사
IPC: H01L21/60 , H01L21/28 , H01L21/3205 , H01L21/31
CPC classification number: H01L21/76807 , H01L21/76816 , H01L21/76849 , H01L21/76885 , H01L23/5222 , H01L23/53295 , H01L2221/1047 , H01L21/00 , H01L21/28 , H01L21/31 , H01L21/3205 , Y10S148/085
Abstract: 도전구조물형성방법에서, 하부콘택을포함하는대상체를형성한다. 대상체상에저부와상부의막질이상이한무기절연물질을포함하는희생막을인-시투(in-situ) 증착공정을통해형성한다. 희생막을관통하여연장되며적어도일부가하부콘택과전기적으로연결되는도전패턴을형성한다. 희생막의상기상부를제거하여희생막의저부로부터도전패턴을노출시킨다. 희생막의저부상에도전패턴을덮는층간절연막을형성한다.
Abstract translation: 本发明的实施例提供了一种形成具有改善的电特性的导电结构的方法。 该方法包括以下步骤：形成包括下触点的物体; 通过原位沉积工艺在物体上形成包括其下部和上部具有不同膜质量的无机绝缘材料的牺牲层; 形成通过穿过所述牺牲层延伸的导电图案，并且其中至少一部分电连接到所述下触点; 通过去除牺牲层的上部，从牺牲层的下部露出导电图案; 以及在所述牺牲层的下部形成覆盖所述导电图案的层间绝缘层。
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公开(公告)号：KR1020150049167A
公开(公告)日：2015-05-08
申请号：KR1020130129376
申请日：2013-10-29
Applicant: 삼성전자주식회사
CPC classification number: H01L21/7682 , H01L21/02296 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/762 , H01L21/764 , H01L21/76802 , H01L21/76849 , H01L21/76882 , H01L21/76883 , H01L21/76885
Abstract: 본발명은반도체장치및 그제조방법을제공한다. 본발명의반도체장치제조방법은장치기판상에개구부들을갖는층간절연막을형성하는것; 상기개구부들내에제공되며, 측부보다두꺼운바닥부를가지는금속막을형성하는것; 상기금속막을리플로우시켜, 상기개구부들내에금속패턴들을각각형성하는것; 및상기개구부들내에캐핑패턴들을형성하여, 상기금속패턴들을덮는것을포함하되, 상기금속패턴들의상면은상기층간절연막의최상면보다낮은레벨을가질수 있다.
Abstract translation: 提供半导体器件及其制造方法。 制造半导体器件的方法包括以下步骤：在衬底上形成具有开口的层间绝缘膜; 形成设置在所述开口中并且具有比所述侧更厚的底部部分的金属膜; 回流金属膜并在开口中分别形成金属图案; 在开口中形成覆盖图案并覆盖金属图案，其中金属图案的上表面可以具有比层间绝缘膜的最上表面更低的水平。
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Patent Agency Ranking
公开(公告)号：KR1020140052727A
公开(公告)日：2014-05-07
申请号：KR1020120119200
申请日：2012-10-25
Applicant: 삼성전자주식회사
CPC classification number: H04L63/0861
Abstract: Disclosed are a terminal device, a server, a method of controlling the terminal device, and a method of controlling the server. The terminal device according to the present invention comprises: a communication unit which communicates with a server storing a file uploaded by another terminal device; a photographing unit which photographs an image; and a control unit for which receives client information for authenticating a client from the server, authenticates a client based on a face image included in client information and a user face image photographed by the photographing unit, and controls the terminal device to receive the uploaded file according to the authentication result, if connected to a server with the same account as that of another terminal device connected to the server according to an instruction of a user. Thus, the present invention can prevent a file, which a user does not want to share with another user, from being exposed to the other user, in advance.
Abstract translation: 公开了终端装置，服务器，控制终端装置的方法以及控制服务器的方法。 根据本发明的终端装置包括：通信单元，与存储由另一终端设备上传的文件的服务器进行通信; 拍摄图像的拍摄单元; 以及控制单元，其从服务器接收用于认证客户端的客户端信息，基于客户端信息中包含的面部图像和由拍摄单元拍摄的用户面部图像来认证客户端，并且控制终端设备接收上传的文件 根据认证结果，如果根据用户的指令连接到与连接到服务器的另一终端设备相同的帐户的服务器。 因此，本发明可以防止用户不想与另一用户共享的文件被预先暴露给其他用户。
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公开(公告)号：KR1020100051137A
公开(公告)日：2010-05-17
申请号：KR1020080110148
申请日：2008-11-07
Applicant: 삼성전자주식회사
IPC: H01L21/336
CPC classification number: H01L21/823857 , H01L21/823821 , H01L21/823842 , H01L21/82385 , H01L27/105 , H01L27/1052
Abstract: PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the reliability of the semiconductor device by forming an n-channel MOS transistor with a silicon oxide which is not etched during an etching process. CONSTITUTION: A first gate structure(126) is formed on the first region of a substrate(100). The first gate structure includes a first silicon oxide layer(106), a metal oxide pattern(108a), a metal pattern(110a) and a first conductive pattern(120b). A first dopant region is defined on both sides of the first gate structure. A second gate structure(128) is formed on the second region of the substrate. The second gate structure includes a second silicon oxide layer(116) and a second conductive pattern(120a). A second dopant region(122) is defined on both sides of the second gate structure.
Abstract translation: 目的：提供一种半导体器件及其制造方法，以通过在蚀刻工艺中形成具有未被蚀刻的氧化硅的n沟道MOS晶体管来提高半导体器件的可靠性。 构成：在衬底（100）的第一区域上形成第一栅极结构（126）。 第一栅极结构包括第一氧化硅层（106），金属氧化物图案（108a），金属图案（110a）和第一导电图案（120b）。 第一掺杂剂区域限定在第一栅极结构的两侧。 第二栅极结构（128）形成在衬底的第二区域上。 第二栅极结构包括第二氧化硅层（116）和第二导电图案（120a）。 第二掺杂剂区域（122）限定在第二栅极结构的两侧。
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公开(公告)号：KR1020070066626A
公开(公告)日：2007-06-27
申请号：KR1020050128020
申请日：2005-12-22
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/45565 , C23C16/52
Abstract: A shower head of a CVD apparatus is provided to avoid a gas leakage by including a built-in coupling member for coupling a first gas supply line to the middle plate and by including a plurality of sealing members for vertically and horizontally sealing the coupling member. First and second gas supply lines(108,118) supply different first and second reaction gases to a process chamber. A base plate(102) is coupled to the upper surface of the process chamber that a second gas supply line penetrates. A first gas supply path is formed in the base plate so that the first reaction gas is supplied from the first gas supply line to the process chamber. A middle plate(104) is coupled to the lower surface of the base plate. A gas supply space for supplying the second reaction gas between the base plates is formed in a middle plate, penetrating the first gas supply path to be connected to the first gas supply line. The middle plate also forms first and second gas supply paths to which the first and second reaction gases are separately supplied. The first gas supply line is coupled to a supply path of the first reaction gas extended from the first gas supply path of the middle plate by a coupling member(120). A low plate(106) includes first and second gas discharge holes connected to the first and second gas supply paths for supplying the first and second reaction gases to the inside of the process chamber.
Abstract translation: 提供了一种CVD装置的淋浴头，以通过包括用于将第一气体供应管线联接到中间板的内置联接构件并且包括用于垂直和水平地密封联接构件的多个密封构件来避免气体泄漏。 第一和第二气体供应管线（108,118）向处理室供应不同的第一和第二反应气体。 底板（102）联接到处理室的上表面，第二气体供应管线穿透。 第一气体供给路径形成在基板中，使得第一反应气体从第一气体供给管线供给到处理室。 中间板（104）联接到基板的下表面。 用于在基板之间供应第二反应气体的气体供给空间形成在穿过要连接到第一气体供给管线的第一气体供给路径的中间板中。 中间板还形成第一和第二气体供应路径，第一和第二反应气体被单独供应到路径。 第一气体供应管线通过联接构件（120）联接到从中间板的第一气体供应路径延伸的第一反应气体的供应路径。 低板（106）包括连接到第一和第二气体供应路径的第一和第二气体排出孔，用于将第一和第二反应气体供应到处理室的内部。
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公开(公告)号：KR1020060109741A
公开(公告)日：2006-10-23
申请号：KR1020050032045
申请日：2005-04-18
Applicant: 삼성전자주식회사
IPC: H01L21/205
CPC classification number: C23C16/45572 , C23C16/45565
Abstract: A process chamber of a semiconductor manufacturing apparatus is provided to prevent discoloration of a shower head due to high temperature by employing a cooling member. A body(112) whose upper surface is opened has a space therein. A cover(114) opens and shuts the opened upper surface of the body. A susceptor(130) on which a substrate is positioned is installed in the body. A shower head(120) is installed on the cover to be opposite to the susceptor. The shower head has spray holes for spraying gas onto the substrate. A cooling member(150) lowers temperature of the cover. The cooling member includes a coolant supplying unit(152) and a spraying nozzle. The spraying nozzle receives the coolant from the coolant supplying unit to spray it around the cover.
Abstract translation: 半导体制造装置的处理室被设置为通过采用冷却构件来防止由于高温导致的喷淋头的变色。 其上表面打开的主体（112）在其中具有空间。 盖（114）打开并关闭身体的敞开的上表面。 其上放置有基材的感受器（130）安装在主体中。 淋浴头（120）安装在盖子上以与基座相对。 喷头具有用于将气体喷射到基板上的喷射孔。 冷却构件（150）降低盖的温度。 冷却构件包括冷却剂供给单元（152）和喷射喷嘴。 喷嘴从冷却剂供应单元接收冷却剂以将其喷洒在盖上。
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公开(公告)号：KR1020060101042A
公开(公告)日：2006-09-22
申请号：KR1020050022870
申请日：2005-03-18
Applicant: 삼성전자주식회사
Inventor： 백종민
IPC: H04B7/26
Abstract: A method for performing communication in a mobile communication terminal capable of TRS communication. In the method, the mobile communication terminal periodically searches for another TRS channel or a mobile communication paging channel even though the mobile communication terminal is in communication or is in TRS communication, and informs a user of reception of TRS paging signals having a TRS channel authentication code or call termination, thereby either performing another TRS communication or mobile communication through connection to a communication channel according to user's selection. Accordingly, it is possible to efficiently manage a plurality of TRS channels or mobile communication channels, and receive and process only TRS signals including a specific TRS channel authentication code from among TRS signals of unspecified persons. Further, it is possible to curtail power consumption of the mobile communication terminal.
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