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公开(公告)号:KR1020040083247A
公开(公告)日:2004-10-01
申请号:KR1020030017833
申请日:2003-03-21
Applicant: 삼성전자주식회사
IPC: F24F5/00
CPC classification number: F24F3/161 , F24F13/10 , F24F2110/40
Abstract: PURPOSE: A device for controlling an air flow rate and an air conditioning system for a clean room by using the same are provided to freely control the flow rate of air supplied to the clean room with respect to an air filter. CONSTITUTION: A device for controlling an air flow rate includes a plurality of first bars(162) fixed to a frame(170), and a plurality of second bars(164) disposed at the lower part of the first bars alternately with the first bars, wherein the second bars are connected each other and move vertically with respect to the first bars. A control element(165) is connected to the second bars by a connection element(168) and drives the second bars vertically to control the flow rate of air. The vertical motion of the second bars is controlled with respect to the first bars to supply air into a clean room at a controllable velocity.
Abstract translation: 目的:提供一种用于通过使用该装置来控制空气流量的装置和用于洁净室的空调系统,以便自由地控制相对于空气过滤器供应到洁净室的空气的流量。 构成:用于控制空气流量的装置包括固定到框架(170)的多个第一杆(162)和多个第二杆(164),其布置在第一杆的下部与第一杆交替地 ,其中所述第二杆彼此连接并相对于所述第一杆垂直移动。 控制元件(165)通过连接元件(168)连接到第二杆,并且垂直地驱动第二杆以控制空气的流量。 第二杆的垂直运动相对于第一杆被控制,以可控制的速度将空气供应到洁净室中。
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公开(公告)号:KR100297724B1
公开(公告)日:2001-09-26
申请号:KR1019990007120
申请日:1999-03-04
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/67034
Abstract: 감광액도포및 현상시스템과베이크유니트에관하여개시된다. 개시된감광액도포및 현상시스템은, 도포기와현상기와베이크유니트와웨이퍼이송용로보트가그 내부에설치된하우징을구비하며, 하우징의상부에는공조장치에의해하우징내부로하향공급되는청정공기를필터링하기위한에어필터가설치된것으로, 에어필터를거쳐공급되는청정공기가베이크유니트의상부에서난기류를형성하며베이크유니트의전면부로유입되는것을방지함으로써, 베이크유니트의전면부에서청정공기가안정된하향기류를형성하며라미나에어플로우되도록하여청정공기가베이크유니트내부로유입되는것을억제하도록된 것을특징으로한다. 그리고, 상기하우징의바닥에는청정공기가배출될수 있도록그레이팅이설치되어청정공기의라미나에어플로우가하우징의바닥면까지유지될수 있도록되어있다. 개시된베이크유니트는, 케이스의내부에설치되어웨이퍼를가열하기위한베이크챔버를그 외부의열적영향으로부터차단시키기위한차단수단을구비하는것을특징으로한다. 차단수단으로는베이크챔버를감싸도록설치되는차단카바와, 냉각수라인의영향을차단하기위한차단판이사용된다.
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公开(公告)号:KR1020000059485A
公开(公告)日:2000-10-05
申请号:KR1019990007120
申请日:1999-03-04
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/67034
Abstract: PURPOSE: A system for coating and developing a photoresist and bake unit is to prevent an air flow introduced in the bake unit and isolate heat influenced on a bake chamber of the bake unit, thereby equally form a width of a wire. CONSTITUTION: A system for coating and developing a photoresist comprises a housing(200), a coating portion(220) for coating the photoresist on a semiconductor wafer, a developing portion for developing the photoresist, a bake unit(240) for heating the wafer at a desired temperature, a robot(210) for transferring the wafer, an air conditioner, an air filter(273a,273b) disposed at an upper portion of the housing to filter air supplied from the air conditioner. In the system, the clean air supplied through the air filter forms turbulent air at an upper portion of the bake unit to prevent the air from being introduced into a front face of the bake unit. The bake unit comprises a case having a wafer passage formed at a front face thereof and an opening formed at a rear face thereof, a bake chamber, a heat-isolating portion for isolating the bake chamber from the heat.
Abstract translation: 目的:用于涂布和显影光致抗蚀剂和烘烤单元的系统是防止在烘烤单元中引入的空气流并隔离受烘烤单元的烘烤室影响的热量,从而同样形成线的宽度。 构造:用于涂覆和显影光致抗蚀剂的系统包括壳体(200),用于在半导体晶片上涂覆光致抗蚀剂的涂覆部分(220),用于显影光致抗蚀剂的显影部分,用于加热晶片的烘烤单元(240) 在期望的温度下,用于传送晶片的机器人(210),空调,设置在壳体的上部的空气过滤器(273a,273b)以过滤从空调提供的空气。 在该系统中,通过空气过滤器供应的清洁空气在烘烤单元的上部形成湍流空气,以防止空气被引入烘烤单元的正面。 烘烤单元包括具有形成在其前表面的晶片通道和形成在其后表面上的开口的壳体,烘烤室,用于将烘烤室与热隔离的隔热部分。
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公开(公告)号:KR1020030027391A
公开(公告)日:2003-04-07
申请号:KR1020010060576
申请日:2001-09-28
Applicant: 삼성전자주식회사
IPC: G01N1/14
CPC classification number: G01N35/10 , G01N1/16 , G01N1/18 , Y10T436/11 , Y10T436/111666 , Y10T436/119163 , Y10T436/2575
Abstract: PURPOSE: A fluid sampling apparatus and an analyzing apparatus having the same are provided to effectively manage a cleanness of process fluid by selectively connecting a contamination measuring apparatus to a plurality of process fluid supplying lines. CONSTITUTION: A fluid sampling apparatus(100) includes a first nozzle assembly(102) having a plurality of spraying nozzles(104) connected to process fluid supplying lines and a first plate(106) for installing the spraying nozzles(104). A plurality of first fluid paths(120) are formed from an upper surface to a lower surface of the first plate(106). The first fluid paths(120) are circularly arranged. The spraying nozzles(104) are connected to one side of the first fluid paths(120) adjacent to the upper surface of the first plate(106). A first fitting(140) of a first sampling line(130) is connected to the other side of the first fluid paths(120). A second nozzle assembly(112) is arranged in opposition to the first nozzle assembly(102).
Abstract translation: 目的:提供一种流体取样装置及其分析装置,通过选择性地将污染测量装置连接到多个工艺流体供应管线来有效地管理工艺流体的清洁度。 构成:流体取样装置(100)包括具有连接到处理流体供应管线的多个喷嘴(104)的第一喷嘴组件(102)和用于安装喷嘴(104)的第一板(106)。 多个第一流体路径(120)由第一板(106)的上表面到下表面形成。 第一流体路径(120)是圆形排列的。 喷嘴(104)连接到与第一板(106)的上表面相邻的第一流体路径(120)的一侧。 第一采样管线(130)的第一配件(140)连接到第一流体路径(120)的另一侧。 第二喷嘴组件(112)布置成与第一喷嘴组件(102)相对。
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公开(公告)号:KR1020020017223A
公开(公告)日:2002-03-07
申请号:KR1020000050422
申请日:2000-08-29
Applicant: 삼성전자주식회사
IPC: H01L21/02
Abstract: PURPOSE: An apparatus for controlling a pressure difference between areas in a clean room is provided to cope with variation of environment within a shorter interval of time than a conventional technology, by automatically controlling the pressure difference to a predetermined value and by actively controlling a flow rate. CONSTITUTION: A clean air supply unit(8) supplies clean air to a process area(3) and a product transfer area. A supply pipe(6) induces the clean air from the clean air supply unit to the areas. A plurality of emission holes are formed in an end of the supply pipe. A mass flow controller controls the quantity of clean air emitted from the emission holes. A pressure difference measure unit(9) measures the pressure difference between the areas, electrically connected to the mass flow controller.
Abstract translation: 目的:提供一种用于控制洁净室中的区域之间的压力差的装置,以便通过将压力差自动控制为预定值并且通过主动地控制流动来应对在常规技术的更短的时间间隔内的环境变化 率。 规定:清洁空气供应单元(8)为处理区域(3)和产品传送区域提供清洁空气。 供应管(6)将洁净空气从清洁空气供应单元引导到区域。 在供给管的端部形成有多个排出孔。 质量流量控制器控制从排放孔排出的清洁空气的量。 压力差测量单元(9)测量与质量流量控制器电连接的区域之间的压力差。
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公开(公告)号:KR100414157B1
公开(公告)日:2004-01-13
申请号:KR1020010060576
申请日:2001-09-28
Applicant: 삼성전자주식회사
IPC: G01N1/14
CPC classification number: G01N35/10 , G01N1/16 , G01N1/18 , Y10T436/11 , Y10T436/111666 , Y10T436/119163 , Y10T436/2575
Abstract: A fluid sampling apparatus and associated fluid analyzer sample process fluids used in semiconductor manufacturing at a plurality of measurement points. The fluid sampling apparatus includes a first nozzle assembly having a plurality of outlet nozzles. The plurality of outlet nozzles are connected to lines supplying the process fluids. A second nozzle assembly is installed above the first nozzle assembly and includes an inlet nozzle connected to an apparatus for measuring a contamination level of the process fluids. A motor is connected to the second nozzle assembly to align a selected outlet nozzle with the inlet nozzle. A pneumatic cylinder is coupled to the first nozzle assembly to connect the selected outlet nozzle with the inlet nozzle. In this manner, it is possible to measure the contamination level of process fluids supplied at a plurality of measurement points by using a single measuring apparatus.
Abstract translation: 在多个测量点处用于半导体制造中的流体采样设备和相关联的流体分析仪采样处理流体。 该流体采样设备包括具有多个出口喷嘴的第一喷嘴组件。 多个出口喷嘴连接到供应过程流体的管线。 第二喷嘴组件安装在第一喷嘴组件上方并且包括连接到用于测量过程流体的污染水平的设备的入口喷嘴。 马达连接到第二喷嘴组件以将选定的出口喷嘴与入口喷嘴对齐。 气缸与第一喷嘴组件连接以将选定的出口喷嘴与入口喷嘴连接。 以这种方式,可以通过使用单个测量装置来测量在多个测量点处供应的过程流体的污染水平。
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公开(公告)号:KR1020010105943A
公开(公告)日:2001-11-29
申请号:KR1020000027074
申请日:2000-05-19
Applicant: 삼성전자주식회사
IPC: G01N21/00
Abstract: The present invention relates to a novel process for preparing O-(3-amino- 2-hydroxy-propyl)-hydroxymic acid halides of formula (I) by reacting a carboxamide oxime of formula (II) wherein R 1 is as specified above with reactive 3-amino-2-hydroxy-propane derivative, diazotizing the O-substituted carboxamide oxime thus obtained with sodium nitrite in the presence of hydrogen halide, decomposing the diazonium salt and if desired, separating the optically active enantiomers and/or reacting the resulting base with an organic or mineral acid, wherein the carboxamide oxime of formula (II) is reacted with a 3- hydroxy azetidinium salt of formula (III) wherein R 2 and R 3 are as defined above and Y - is a salt forming anion, in a lower alcoholic, preferably ethanolic medium optionally containing water and made alkaline with an alkali hydroxide, and before diazotizing the O-substituted carboxamide oxime intermediate obtained, the reaction mixture is neutralised and the organic solvent is removed. The process according to the invention provides the compounds of formula (I) with a higher yield compared to the prior art processes.
Abstract translation: 本发明涉及式(I)的O-(3-氨基-2-羟基 - 丙基) - 羟基酰基卤的制备方法,其中R 1如上所定义的式(II)的甲酰胺肟与式 反应性3-氨基-2-羟基 - 丙烷衍生物,在卤化氢存在下用亚硝酸钠进行重氮化O-取代的甲酰胺肟,分解重氮盐,如果需要,分离光学活性对映体和/或使所得的 碱与有机或无机酸反应,其中式(II)的甲酰胺肟与式(III)的3-羟基氮杂环丁烷鎓盐反应,其中R 2和R 3如上定义,Y - 是形成阴离子的盐, 在任选含有水并用碱金属氢氧化物碱化的低级醇,优选乙醇介质中,并且在获得的O-取代的甲酰胺肟中间体重氮化之前,将反应混合物中和并除去有机溶剂 。 根据本发明的方法提供了与现有技术方法相比具有更高产率的式(I)化合物。
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公开(公告)号:KR1020000065440A
公开(公告)日:2000-11-15
申请号:KR1019990011734
申请日:1999-04-03
Applicant: 삼성전자주식회사
IPC: H01L21/68
CPC classification number: H01L21/67748 , F24F2011/0004 , H01L21/67017 , H01L21/6715 , Y10S414/14
Abstract: PURPOSE: A method of cleaning an equipment for manufacturing semiconductor and the equipment for manufacturing semiconductor appling the method is provided to suppress pollution of a wafer inside of a process equipment effectively. CONSTITUTION: In a method of cleaning an equipment for manufacturing semiconductor, cleaning air passes a service area(120) placed between an upper plenum(200) and a lower plenum(300) in a first pressure by flowing from the upper plenum, supply part of the cleaning air, to the lower plenum, recovery part. Also, cleaning air passes a working area(110) contiguous to the service area(120) in a second pressure higher than the first pressure by flowing the upper plenum to the lower plenum. The cleaning air is supplied to wafer transfer area(132) which is placed between the service area and the working area and connected with the working area and wafer process area(131) connected with the wafer transfer area. In the case, the pressure of wafer process area is kept higher than that of the wafer transfer area. Consequently, the cleaning air in the wafer transfer area flows to the working area or the lower plenum.
Abstract translation: 目的:提供一种清洁半导体制造设备和半导体制造设备的方法,以有效地抑制处理设备内的晶片的污染。 构成:在清洁用于制造半导体的设备的方法中,清洁空气通过从上部集气室,供应部分流动而在第一压力下通过放置在上部集气室(200)和下部增压室(300)之间的维修区域(120) 的清洁空气,到下部通风室,回收部分。 此外,清洁空气通过使上部通风室流到下部通风室,使得与服务区域(120)邻接的工作区域(110)的压力高于第一压力。 将清洁空气供给到放置在服务区域和工作区域之间的晶片传送区域(132),并与与晶片传送区域连接的工作区域和晶片处理区域(131)连接。 在这种情况下,晶片处理区域的压力保持高于晶片传送区域的压力。 因此,晶片传送区域中的清洁空气流到工作区域或下部通风室。
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公开(公告)号:KR1020110075095A
公开(公告)日:2011-07-06
申请号:KR1020090131440
申请日:2009-12-28
IPC: H01L21/02
CPC classification number: H01L21/67253 , H01L21/67259 , H01L21/67706 , H01L21/68742
Abstract: PURPOSE: An apparatus for regenerating a semiconductor wafer is provided to insert a wafer one by one by separating wafers to be regenerated from each other. CONSTITUTION: A semiconductor wafer reproduction device comprises a loading unit(30) for loading a wafer to be reproduced, a processing unit for regenerating a transferred wafer, and an unloading unit for unloading the wafer. The loading unit loads the wafer to be reproduced into the processing unit. The loading unit includes a sensor for detecting a size of the wafer. The processing unit transfers the loaded wafer. The processing unit includes a conveyor(40) which can partially change the damaged part. The processing unit includes an injection nozzle part.
Abstract translation: 目的:提供一种用于再生半导体晶片的装置,通过分离待再生的晶片来逐个插入晶片。 构成:半导体晶片再生装置包括用于加载要再现的晶片的加载单元(30),用于再生转移的晶片的处理单元和用于卸载晶片的卸载单元。 加载单元将要再现的晶片装载到处理单元中。 加载单元包括用于检测晶片尺寸的传感器。 处理单元传送加载的晶片。 处理单元包括可以部分地改变损坏部分的传送器(40)。 处理单元包括喷嘴部分。
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公开(公告)号:KR100502187B1
公开(公告)日:2005-07-20
申请号:KR1020030017833
申请日:2003-03-21
Applicant: 삼성전자주식회사
IPC: F24F5/00
CPC classification number: F24F3/161 , F24F13/10 , F24F2110/40
Abstract: 공기 유속 제어 장치 및 이를 이용한 청정실 공조 시스템이 개시되어 있다. 상기 공기 유속 제어 장치는 프레임으로 고정되어 있는 복수개의 제1 바, 상기 복수개의 제1 바에 대해 상하로 움직이며 그 각각이 서로 연결되어 상기 제1 바의 하부에서 각각의 제1 바와 교호적으로 배치되는 복수개의 제2 바, 상기 복수개의 제2 바를 상/하로 구동하여 공기의 유속을 조절하기 위한 제어 부재 및 상기 복수개의 제2 바와 상기 제어 부재를 연결시키기 위한 연결 부재를 구비한다. 상기 복수개의 제1 바에 대한 상기 복수개의 제2 바의 상/하 운동에 의해 청정실 내에 제어 가능한 속도로 공기를 공급한다.
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