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公开(公告)号：KR1020030079462A
公开(公告)日：2003-10-10
申请号：KR1020020018505
申请日：2002-04-04
Applicant: 삼성전자주식회사
IPC: C23C14/35
CPC classification number: H01J37/347 , H01J37/3405 , H01J37/3423 , H01J37/3491
Abstract: PURPOSE: A sputter chamber for increasing the limit of use efficiency of metal target for generating metal particles in the sputtering process of a metal for large sized substrate LCD is provided. CONSTITUTION: In a sputter chamber in which two or more magnet cathodes(25a,25b) are used in the LCD fabrication process, the sputter chamber is characterized in that a metal target(21a) in which a corrosion generating part has different thickness as the side oppositely directed to glass is forming a plane is mounted on backing plate(23), wherein the metal target is formed in such a way that a part positioned at both ends of a turning point of the magnet cathodes is relatively thicker than the other parts, wherein the metal target is split into two or more parts having different thickness, wherein a gap between the split metal targets is 1.5 mm or less to prevent arc generation by abnormal electrical discharge, and wherein corners of the split metal targets are formed in a chamfer or round of 2 mm or less to prevent arc generation by abnormal electrical discharge. In a sputter chamber in which two or more magnet cathodes are used in the LCD fabrication process, the sputter chamber is characterized in that mounting grooves are respectively formed at the side oppositely directed to backing plate positioned at both ends of a turning point of the magnet cathodes, and split metal targets are mounted on the mounting grooves of the both sides and the backing plate between the mounting grooves respectively.
Abstract translation: 目的：提供一种溅射室，用于在用于大尺寸基板LCD的金属的溅射工艺中增加用于产生金属颗粒的金属靶的使用效率极限。 构成：在LCD制造工艺中使用两个或更多个磁体阴极（25a，25b）的溅射室中，溅射室的特征在于：金属靶（21a），其中腐蚀发生部分的厚度不同于 形成平面的侧面安装在背板（23）上，其中金属靶被形成为使得位于磁体阴极的转折点的两端的部分比其它部分更厚 其特征在于，所述金属靶被分割成两个以上的厚度不同的部分，其中，所述分割金属靶之间的间隙为1.5mm以下，以防止由异常放电产生的电弧，并且所述裂开金属靶的角部形成为 倒角或圆角为2mm以下，以防止异常放电产生电弧。 在LCD制造工艺中使用两个或多个磁体阴极的溅射室中，溅射室的特征在于，安装槽分别形成在位于磁铁转折点两端的背板的相反侧 阴极和分割金属靶分别安装在两侧的安装槽和安装槽之间的背板上。
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公开(公告)号：KR1020020061032A
公开(公告)日：2002-07-22
申请号：KR1020010001733
申请日：2001-01-12
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , Y10S438/975 , H01L2924/00
Abstract: PURPOSE: An alignment mark and a system and a method for alignment and exposure by using the alignment mark are provided to compatibly use an existing alignment system, to improve accuracy by additionally forming a mesa or a trench pattern on respective unit marks, and to precisely align by enhancing the reliability on the detection of an alignment position. CONSTITUTION: The method comprises the steps of forming a mesa or a trench pattern(M,T) forming a reverse image on each unit mark, checking the contrast based on comparing the measured values of the unit mark portion and a non-mark portion by irradiating a first probe beam to the unit mark, checking the contrast based on the measured values of the portion with the mesa or the trench pattern and the portion without a mesa or a trench pattern by irradiating a second probe beam to the unit mark, and determining the center of a mark depending on the contrast values. The first probe beam is a red laser beam, and the second probe beam is a green laser beam. The center of a mark is determined on the basis of the maximum contrast value.
Abstract translation: 目的：提供对准标记和使用对准标记的对准和曝光的系统和方法，以兼容地使用现有的对准系统，通过在相应的单位标记上附加地形成台面或沟槽图案来提高精度，并且精确地 通过提高对准位置的检测的可靠性来对准。 构成：该方法包括以下步骤：在每个单位标记上形成形成反转图像的台面或沟槽图案（M，T），基于将单位标记部分和非标记部分的测量值与 将第一探测光束照射到单位标记上，通过将第二探测光束照射到单位标记，基于具有台面或沟槽图案的部分的测量值和不具有台面或沟槽图案的部分来检查对比度，以及 根据对比度值确定标记的中心。 第一探测光束是红色激光束，第二探测光束是绿色激光束。 基于最大对比度值确定标记的中心。
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公开(公告)号：KR100500469B1
公开(公告)日：2005-07-12
申请号：KR1020010001733
申请日：2001-01-12
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , Y10S438/975 , H01L2924/00
Abstract: 본 발명은 정렬시스템에 대응하여 웨이퍼를 정렬 위치시키도록 하기 위한 정렬마크와 이를 이용한 노광정렬시스템 및 그 정렬방법에 관한 것으로서, 이를 구현하기 위한 정렬마크는, 화학적 기계적 폴리싱 공정이 적용되는 층의 하부층 내에 메사 또는 트렌치 형상의 단위마크가 소정 간격으로 복수개 배열되어 정렬 공정시 정렬신호를 형성하는 정렬마크에 있어서, 상기 단위마크 내에 화학적 기계적 폴리싱 공정시 디싱 현상을 방지하기 위한 정도의 밀도로 적어도 하나 이상의 메사 또는 트렌치 패턴이 인라인 배열되어 이루어진다. 이에 따르면 종래 정렬마크의 각 단위마크 범위 내에 메사 또는 트렌치 패턴이 배열되어 조사되는 소정 파장의 광과 다른 파장의 광에 대응하여 세분하여 각각의 정렬 위치가 검출하게 됨으로써 종래의 정렬시스템을 호환할 수 있을 뿐 아니라 보다 향상된 정확도로 신뢰도가 향상되며, 화학적 기계적 폴리싱 공정에 대응하여 충분한 밀도를 이루어 디싱 현상이 방지되는 등의 효과가 있다.
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Patent Agency Ranking
公开(公告)号：KR1020080067849A
公开(公告)日：2008-07-22
申请号：KR1020070005275
申请日：2007-01-17
Applicant: 삼성전자주식회사
Abstract: A scrubber is provided to prevent the deposition of by-products due to increase of water in the gas by performing a dry treatment after subjecting pollution gas to a wet treatment, and a method of purifying the pollution gas using the scrubber is provided. A scrubber(10) comprises: a wet treatment part(100) including a first chamber(105), a gas inflow pipe(110) which is formed on the first chamber, and into which pollution gas flows, and cleaning nozzles formed in the first chamber to spray cleaning water to the pollution gas; a dry treatment part(200) including a second chamber(210), a heater for heating the second chamber, and a gas exhaust pipe(240) formed on the second chamber to exhaust purified pollution gas; and a connecting pipe which connects the first chamber and the second chamber, and supplies the pollution gas exhausted through the wet treatment part to the dry treatment part. The scrubber further comprises a dust collector(230) to which a voltage with a positive electric charge or negative electric charge is applied to remove particles in the pollution gas. The wet treatment part additionally includes a filter. Further, the heater is an electricity typed heat or a combustion typed heat.
Abstract translation: 提供了一种洗涤器，用于通过在对污染气体进行湿处理后进行干法处理，防止由于气体中水分的增加而造成的副产物沉积，并且提供了使用洗涤器净化污染气体的方法。 洗涤器（10）包括：湿处理部分（100），包括第一室（105），形成在第一室上的气体流入管（110），污染气体流入的湿气处理部分 第一室喷淋清洗水到污水; 包括第二室（210），用于加热第二室的加热器的干燥处理部（200）和形成在第二室上以排出净化污染气体的排气管（240） 以及连接第一室和第二室的连接管，并且将通过湿处理部排出的污染气体供给到干燥处理部。 洗涤器还包括集尘器（230），施加具有正电荷或负电荷的电压以去除污染气体中的颗粒。 湿处理部分还包括过滤器。 此外，加热器是电加热或燃烧型热。
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公开(公告)号：KR1020030087677A
公开(公告)日：2003-11-15
申请号：KR1020020025528
申请日：2002-05-09
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: PURPOSE: A method for measuring the resistance of a semiconductor thin film and a resistance measuring apparatus of the semiconductor thin film using the same are provided to be capable of easily measuring the resistance of the semiconductor thin film by generating photoelectric current at the semiconductor thin film. CONSTITUTION: Photoelectric current is generated at a semiconductor thin film sample by irradiating measuring light at the semiconductor thin film sample. Measuring current is applied to the predetermined portion located between the first and second position by using a current supply part(430). The voltage between the third and fourth position, is measured by using a voltage measuring part(330). At this time, the third and fourth position are located between the first and second position. The resistance of the semiconductor thin film sample is calculated by using the measuring current and the measure voltage.
Abstract translation: 目的：提供一种用于测量半导体薄膜的电阻的方法和使用其的半导体薄膜的电阻测量装置，以便能够通过在半导体薄膜处产生光电流容易地测量半导体薄膜的电阻 。 构成：通过在半导体薄膜样品上照射测量光，在半导体薄膜样品处产生光电流。 通过使用电流供应部件（430）将测量电流施加到位于第一和第二位置之间的预定部分。 通过使用电压测量部（330）测量第三和第四位置之间的电压。 此时，第三和第四位置位于第一和第二位置之间。 通过使用测量电流和测量电压来计算半导体薄膜样品的电阻。
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公开(公告)号：KR1020020064109A
公开(公告)日：2002-08-07
申请号：KR1020010004781
申请日：2001-02-01
Applicant: 삼성전자주식회사
IPC: H01L21/20
Abstract: PURPOSE: An align mark formation method is provided to improve a product reliability by minimizing an align deviation and by preventing alignment defects. CONSTITUTION: The first metal layer(120) is formed on a thin film pattern(100) having an active region and a scribe line region. After patterning a photoresist, the first groove is formed on the first metal layer(120) by etching using the photoresist pattern as a mask. Then, a transparent interlayer dielectric(130) is deposited on the resultant structure. At this time, the interlayer dielectric(130) completely filled into the groove become SPM11. After performing an align using the first light, a contact hole on the active region and a number of second grooves(139) on the scribe line region are formed on the interlayer dielectric(130). Then, the second metal layer(140) is formed on the resultant structure. At this time, convexes having a symmetric shape with respect to the second grooves are formed on the upper portion of the second grooves(139).
Abstract translation: 目的：提供对准标记形成方法，通过最小化对准偏差和防止对准缺陷来提高产品的可靠性。 构成：第一金属层（120）形成在具有活性区域和划线区域的薄膜图案（100）上。 在图案化光致抗蚀剂之后，通过使用光致抗蚀剂图案作为掩模的蚀刻，在第一金属层（120）上形成第一凹槽。 然后，在所得结构上沉积透明的层间电介质（130）。 此时，完全填充到槽中的层间电介质（130）成为SPM11。 在使用第一光进行对准之后，在层间电介质（130）上形成有源区上的接触孔和划线区域上的多个第二沟槽（139）。 然后，在所得结构上形成第二金属层（140）。 此时，在第二槽（139）的上部形成有相对于第二槽具有对称形状的凸部。
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公开(公告)号：KR1019970028818A
公开(公告)日：1997-06-24
申请号：KR1019950040134
申请日：1995-11-07
Applicant: 삼성전자주식회사
IPC: G03F7/00
Abstract: 반도체소자 제조용 포토레지스트와 반도체소자 제조공정의 검사방법이 개시되어 있다.
본 발명의 포토레지스트는 포토리소그라피공정의 적어도 한 단계에서 특정 포토레지스트와 구별될 수 있는 특정 색채를 나타내는 첨가물(additive)이 함유된 것을 특징으로 한다.
또한 본 발명의 검사방법은 반도체소자 제조상의 특정 포토리소그라피공정에서 상기 공정에 적합한 특성을 가지는 동시에 상기 공정의 적어도 한 단계에서 특정 색채를 나타내는 첨가물을 함유한 포토레지스트를 사용하고, 상기 반도체소자 제조에 사용되는 다른 종류의 포토레지스트는 상기 단계에서 다른 색채를 나타내도록 첨가물을 조정하여 제조함으로써, 포토레지스트의 색채를 통해 해당 공정에 올바른 종류의 포토레지스트가 사용되었는가를 확인하는 것을 특징으로 한다.
따라서, 포토리소그라피공정에서의 재작업 또는 웨이퍼 폐기의 위험을 줄여주고 공정의 신뢰성을 높이는 효과를 갖는다.
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