公开(公告)号：KR1020100007518A

公开(公告)日：2010-01-22

申请号：KR1020080068174

申请日：2008-07-14

Applicant: 삼성전자주식회사

Inventor： 성덕용 ,  한문형 ,  안드레이 ,  박휴림 ,  조남영 ,  권태용 ,  석승현 ,  강동우 ,  이창윤 ,  이동하

IPC: H01L21/205

CPC classification number: C23C16/515 ,  C23C16/505 ,  H01J37/32091

Abstract: PURPOSE: A deposition device and a method for depositing a thin film using the same are provided to deposit the thin film with high film formation uniformity and deposition rate by supplying the high frequency power and the low frequency power with a pulse type to a plasma electrode. CONSTITUTION: A deposition apparatus includes a gas flow pipe(110), a plasma electrode(140), a substrate support, a plasma connection terminal, a first voltage applier(151), and a second voltage applier(152). The substrate support is used as an opposite electrode of a plasma electrode. A substrate(135) is mounted on the substrate support. The plasma connection terminal is connected to the plasma electrode. The first voltage applier is connected to the plasma connection terminal. The first voltage applier applies the voltage in a continuous mode. The second voltage applier is connected to the plasma connection terminal. The second voltage applier applies the voltage in a pulse mode.

Abstract translation: 目的：提供一种沉积装置和使用其沉积薄膜的方法，以通过向等离子体电极提供脉冲型的高频功率和低频功率来沉积具有高成膜均匀性和沉积速率的薄膜 。 构成：沉积装置包括气体流通管（110），等离子体电极（140），基板支架，等离子体连接端子，第一电压施加器（151）和第二电压施加器（152）。 衬底支撑体用作等离子体电极的相对电极。 衬底（135）安装在衬底支撑件上。 等离子体连接端子连接到等离子体电极。 第一电压施加器连接到等离子体连接端子。 第一电压施加器以连续模式施加电压。 第二电压施加器连接到等离子体连接端子。 第二个施压器以脉冲模式施加电压。