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1.发明授权
公开(公告)号：KR101678039B1
公开(公告)日：2016-11-21
申请号：KR1020100095939
申请日：2010-10-01
Applicant: 삼성전자주식회사
IPC: H01L21/027 , G03F9/00
CPC classification number: G03F7/70633 , G03B27/521 , G03B27/53 , G03F7/70291 , G03F9/70 , G03F9/7011 , G03F9/7015
Abstract: 마스크리스노광(Maskless Lithography)에서장비조립후, 실제노광시작위치와자세를찾아설계상공칭값대비차이를결정하고보상하는방법을제안한다. 기판을로딩/언로딩하는로더의설치시, 로더의자세를미세조정하기어렵기때문에장비조립후실제노광시작위치와자세를찾아설계상공칭값대비차이를결정하고보상하는방법을통해기판의로딩자세와노광스캔방향(자세)의차이를보상할수 있다. 또한 MMO(Machine to Machine Overlay 또는 Multi-Machine Overlay) 노광시, 다른노광장치의이송자유도별범위(stroke)에는제한이있으므로이송가능한각 변위범위(angular stroke) 이내로노광시작위치와자세를확보하여다른노광장치와 MMO를위한노광호환이가능하다.
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公开(公告)号：KR101215094B1
公开(公告)日：2012-12-24
申请号：KR1020100103789
申请日：2010-10-25
Applicant: 삼성전자주식회사
IPC: H01L21/027 , G03F7/20
CPC classification number: G01B11/002 , G01B11/02 , G03F7/70275 , G03F9/7088
Abstract: 본발명은정렬장치에관한것으로, 복수개의정렬마크를가지는피측정체와, 피측정체의위치를측정하도록복수개의정렬계를가지는정렬광학계와, 복수개의정렬계중 인접하는정렬계간의간격이복수의정렬마크중 인접하는정렬마크간의간격보다큰 경우인접하는정렬마크들에서반사된정렬광을분기시켜인접하는정렬계들각각으로전달하는광학부재를포함하여구성되는것이다.
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3.发明公开
公开(公告)号：KR1020120034396A
公开(公告)日：2012-04-12
申请号：KR1020100095939
申请日：2010-10-01
Applicant: 삼성전자주식회사
IPC: H01L21/027 , G03F9/00
CPC classification number: G03F7/70633 , G03B27/521 , G03B27/53 , G03F7/70291 , G03F9/70 , G03F9/7011 , G03F9/7015 , H01L21/0274 , G03F7/70775 , G03F9/7003 , G03F9/7069 , H01L21/0337
Abstract: PURPOSE: A maskless lithography apparatus a method for determining a lithography start position and a posture in maskless lithography are provided to fine a lithography start position and a posture and determine a comparison difference with a design nominal value by using a relative position difference and a relative posture difference. CONSTITUTION: A substrate, on which any layer is patterned, is loaded on a transfer table(111). A pattern is exposed to a loaded substrate by using a maskless lithography. A mark position, which is patterned on the substrate and the mark position, which has a newly exposed pattern, are measured. A relative posture difference between a design lithography start posture and an actual posture is obtained by using a measured mark position. The relative position difference between the design lithography start position and an actual position is obtained by using the measured mark position. A compensated lithography start position and posture are determined by using the relative position difference and the relative posture difference.
Abstract translation: 目的：提供一种无掩模光刻设备，用于确定无掩模光刻中的光刻起始位置和姿势的方法，以使光刻起始位置和姿势微调，并通过使用相对位置差和相对位置差确定与设计标称值的比较差 姿势差异。 构成：将任何层图案化的衬底装载在转印台（111）上。 通过使用无掩模光刻将图案暴露于加载的基板。 测量具有新曝光图案的在基板上图案化的标记位置和标记位置。 通过使用测量的标记位置来获得设计光刻起始姿势与实际姿势之间的相对姿态差。 通过使用测量的标记位置获得设计光刻起始位置与实际位置之间的相对位置差。 通过使用相对位置差和相对姿态差来确定补偿光刻开始位置和姿势。
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公开(公告)号：KR1020090038242A
公开(公告)日：2009-04-20
申请号：KR1020070103640
申请日：2007-10-15
Applicant: 삼성전자주식회사
IPC: H01L27/146
CPC classification number: H01L27/14609 , H01L27/14621
Abstract: An image sensor including photoelectric generating unit - charge trap layer is provided to increase quantum efficiency by improving a charge holding characteristic. A unit pixel(100) of the image sensor includes a substrate(110) having an active area, a gate insulating layer(120), a charge trapping layer(130), a blocking film(140), and a gate electrode(150). Source and drain regions(160a, 160b) are formed inside the substrate, and a gate insulating layer is formed by oxidizing the surface of the substrate. The gate insulating layer is formed between the charge trapping layer and the substrate while being used as an energy barrier. An electron-hole pair is generated according to the charge trapping layer, and a charge trapping layer performs a function such as the photoelectric transform of the image sensor. The charge trapping layer maintains the generated electron-hole pair, and a blocking film prevents the leakage of the gate electrode of the electron-hole pair. The gate electrode controls the formation of a channel at the substrate by polarizing the electron-hole pair while the image sensor is operated.
Abstract translation: 提供包括光电发生单元 - 电荷陷阱层的图像传感器，以通过改善电荷保持特性来提高量子效率。 图像传感器的单位像素（100）包括具有有源区的衬底（110），栅极绝缘层（120），电荷俘获层（130），阻挡膜（140）和栅电极（150） ）。 源极和漏极区域（160a，160b）形成在衬底内部，并且通过氧化衬底的表面形成栅极绝缘层。 栅极绝缘层形成在电荷捕获层和衬底之间，同时被用作能量势垒。 根据电荷捕获层产生电子 - 空穴对，并且电荷捕获层执行诸如图像传感器的光电变换的功能。 电荷捕获层保持所产生的电子 - 空穴对，并且阻挡膜防止电子 - 空穴对的栅电极的泄漏。 栅电极通过在图像传感器被操作时使电子 - 空穴对偏振来控制在基板处形成通道。
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公开(公告)号：KR100839076B1
公开(公告)日：2008-06-19
申请号：KR1020070012386
申请日：2007-02-06
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: An apparatus for inspecting a multilayer structure, and an apparatus for inspecting materials used in fabricating multilayer semiconductor using the same are provided to accurately locate defect positions within the multilayer structure by detecting diffraction of X-rays from the multilayer structure. An apparatus for inspecting a multilayer structure comprises a multilayer structure, an X-ray generator, and a detection unit. The multilayer structure makes an electromagnetic wave having a wavelength smaller than at least extreme ultraviolet band reflected. The X-ray generator allows X-rays with uniformed wavelength at an angle of incidence where reflection occurs in the multilayer structure, comprising a monochromator. The detection unit comprising a plurality of detection cells that are aligned inline with one another or in matrix, locates a defect position in the multilayer structure by detecting if the X-rays are reflected from the multilayer structure.
Abstract translation: 提供一种用于检查多层结构的装置和用于检查使用其的制造多层半导体的材料的装置，以通过检测来自多层结构的X射线的衍射来精确地定位多层结构内的缺陷位置。 用于检查多层结构的装置包括多层结构，X射线发生器和检测单元。 多层结构使得具有比至少极端的紫外线带反射的波长小的电磁波。 X射线发生器允许具有均匀波长的X射线以入射角在多层结构中发生反射，包括单色仪。 检测单元包括彼此对齐或矩阵排列的多个检测单元，通过检测X射线是否从多层结构反射来定位多层结构中的缺陷位置。
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Patent Agency Ranking
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公开(公告)号：KR101678050B1
公开(公告)日：2016-12-07
申请号：KR1020090110437
申请日：2009-11-16
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/2057 , G03F7/70291 , G03F7/70633 , G03F7/70666 , G03F9/00 , G03F9/7003 , G03F9/7015 , G03F9/7019
Abstract: 본발명은가상의마스크의패턴을기판에형성시키는마스크리스노광장치에있어서, 기판이장착되는이동부; 광을출력하는광원부; 광원부의광을패턴을형성하는복수스폿빔으로분할하여이동부로투영하는투영부; 기판과가상의마스크의정렬을위한정렬광을출력하는정렬부; 복수스폿빔과정렬광을촬상하는빔 촬상부; 촬상된정렬광과적어도두 개의스폿빔의거리를측정하고, 측정된거리에따라가상의마스크와기판의정렬상태를판단하여이동부의이동을제어하는제어부를포함한다. 본발명은오프액시스정렬을이용하여마스크리스노광공정을수행할때, 노광전에정렬광과패턴형성광의복수스폿빔과의거리(즉벡터량)인베이스라인(baseline)을정의함으로써기판과가상의마스크간의정렬상태를판단할수 있다. 또한기준베이스라인과정의된베이스라인을비교하여베이스라인의변동량을산출할수 있고, 산출된베이스라인의변동량을보정할수 있어가상의마스크와기판의정렬을정확하게수행할수 있으며이로인해기판의노광성능을향상시킬수 있다.
Abstract translation: 示例性实施例涉及使用离轴对准以在基板上形成虚拟掩模图案的无掩模曝光装置。 无掩模曝光装置包括：放置基板的移动单元，被配置为输出光的光源单元;投影单元，被配置为将从光源单元输出的光分成多个点波束，以形成图案并配置 将所述光束投射到所述移动单元，配置成输出对准光以对准所述基板和虚拟掩模的对准单元，被配置为捕获所述点光束和所述对准光的光束成像单元，以及控制器， 捕获的对准光和捕获的光束中的至少两个，并且被配置为基于测量的距离来确定虚拟掩模和基板之间的对准，以控制移动单元的移动。
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