公开(公告)号：KR1020050038898A

公开(公告)日：2005-04-29

申请号：KR1020030074211

申请日：2003-10-23

Applicant: 삼성전자주식회사

Inventor： 연순호 ,  김용대

IPC: H01L21/3065

Abstract: 반도체 기판을 건식 식각하기 위한 장치가 개시되어 있다. 상기 장치는 반도체 기판의 식각을 위한 공정 가스가 제공되는 챔버와, 상기 챔버의 하부에 구비되는 정전척을 포함한다. 상기 정전척의 외주면에는 포커스링이 구비되고, 상기 포커스링의 외주면에는 커버링이 구비된다. 상기 정전척, 포커스링 및 커버링 사이의 간격을 최소화하고, 상기 포커스링과 커버링을 서로 맞물리도록 한다. 따라서 상기 포커스링의 하부면으로 식각 공정 진행시 발생된 파티클의 침투가 방지된다. 그러므로 상기 챔버에 발생되는 고주파의 헌팅 현상의 원인을 제거하여 균일한 고주파전력을 제공할 수 있다.

公开(公告)号：KR1020040041333A

公开(公告)日：2004-05-17

申请号：KR1020020069546

申请日：2002-11-11

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  박재영 ,  연순호

IPC: H01L21/3065

Abstract: PURPOSE: An apparatus for manufacturing a semiconductor device is provided to be capable of smoothly exhausting particles in a chamber and minimizing the chipping of a cover ring. CONSTITUTION: An apparatus for manufacturing a semiconductor device is provided with a chamber(100) for carrying out a predetermined process, a chuck(150) located at the predetermined portion in the chamber for stably supporting a wafer(W), and a cover ring(130) for enclosing around the chuck. At this time, the upper portion of the cover ring is inclined toward the edge. The apparatus further includes an inflow pipe(110), a through pipe(112), and a focus ring(132).

Abstract translation: 目的：提供一种用于制造半导体器件的装置，其能够平稳地排出腔室中的颗粒并最小化覆盖环的碎裂。 构成：半导体装置的制造装置具有用于进行预定处理的室（100），位于室内预定部分的卡盘（150），用于稳定地支撑晶片（W），以及盖环 （130），用于围绕卡盘包围。 此时，盖环的上部朝向边缘倾斜。 该设备还包括流入管（110），通管（112）和聚焦环（132）。

公开(公告)号：KR100578129B1

公开(公告)日：2006-05-10

申请号：KR1020030065129

申请日：2003-09-19

Applicant: 삼성전자주식회사

Inventor： 김용대 ,  연순호 ,  김도형 ,  이두원

IPC: H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32642 ,  H01L21/6831

Abstract: 플라즈마 식각 장치를 제공한다. 이 식각 장치는 웨이퍼가 안착되는 정전척, 정전척을 둘러싸는 절연부속품 및 정전척과 절연부속품의 상부에 배치되는 환형의 포커스 링을 구비한다. 이때, 포커스 링은 절연부속품과 접하는 부분에서 요철 구조를 갖는다.

公开(公告)号：KR1020050028629A

公开(公告)日：2005-03-23

申请号：KR1020030065129

申请日：2003-09-19

Applicant: 삼성전자주식회사

Inventor： 김용대 ,  연순호 ,  김도형 ,  이두원

IPC: H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32642 ,  H01L21/6831

Abstract: A plasma etching apparatus is provided to minimize a discharge phenomenon caused by deposition of byproducts and embody a more stable etch characteristic by including a focus ring of a roughness type and by lengthening a path through which the byproducts penetrate into the lower surface of the focus ring. A wafer is placed on an electrostatic chuck(12). The electrostatic chuck is surrounded by insulation accessories. A focus ring(50) of a ring type is disposed over the electrostatic chuck and the insulation accessories(30). The focus ring has a concavo-convex structure in a region where the focus ring comes in contact with the insulation accessories.

Abstract translation: 提供了一种等离子体蚀刻装置，用于最小化由副产物沉积引起的放电现象，并且通过包括粗糙型的聚焦环和延长副产品穿过聚焦环的下表面的路径来体现更稳定的蚀刻特性 。 将晶片放置在静电卡盘（12）上。 静电卡盘被绝缘配件包围。 环状的聚焦环（50）设置在静电卡盘和绝缘配件（30）的上方。 聚焦环在聚焦环与绝缘配件接触的区域中具有凹凸结构。

公开(公告)号：KR1020040024374A

公开(公告)日：2004-03-20

申请号：KR1020020055967

申请日：2002-09-14

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  조정훈 ,  김상호 ,  박유춘 ,  연순호

IPC: H01L21/00

Abstract: PURPOSE: A heater block that controls heat radiation and improves temperature uniformity is provided to obtain uniform heat distribution on a heater block by inserting a heat radiation blocking layer of a multi layer structure into the heater block, and to more efficiently heat a semiconductor substrate by controlling heat radiation to the inside of the heater block. CONSTITUTION: A lower plate(106) of the heater block is made of an aluminum material. The lower part of the lower plate of the heater block is connected to a power apply unit(100) and a wire connected to the power apply unit is built in the center of the lower plate of the heater block. The heat radiation blocking layer(110) controls the heat that generated from a heating wire plate(104) and is exhausted to the outside, formed on the lower plate of the heater block. The heating wire plate of a circular type completely covers the heat radiation blocking layer. A circular upper plate(102) of the heater block surrounds the upper and side parts of the heating wire plate, the side part of the heat radiation blocking layer and the side part of the lower plate of the heater block. A welding part(108) welds lower portions of the upper and lower plates of the heater block where the lower portions contact each other.

Abstract translation: 目的：提供一种控制热辐射并提高温度均匀性的加热器块，以通过将多层结构的散热阻挡层插入加热器块中以在加热器块上获得均匀的热分布，并且通过以下方式更有效地加热半导体衬底 控制加热块内部的热辐射。 构成：加热器块的下板（106）由铝材料制成。 加热器块的下板的下部连接到供电单元（100），并且连接到供电单元的线内置在加热器块的下板的中心。 散热阻挡层（110）控制从加热线板（104）产生的热量并排出到形成在加热器块的下板上的外部。 圆形加热丝板完全覆盖散热阻挡层。 加热器块的圆形上板（102）围绕加热丝板的上部和侧部，散热阻挡层的侧部和加热器块的下板的侧部。 焊接部分（108）焊接加热器块的上部和下部板的下部，其中下部彼此接触。

公开(公告)号：KR1020040016693A

公开(公告)日：2004-02-25

申请号：KR1020020048976

申请日：2002-08-19

Applicant: 삼성전자주식회사

Inventor： 연순호 ,  이영진

IPC: H01L21/306

Abstract: PURPOSE: A wafer support unit is provided to minimize consumption of parts and a cover ring functioning as an insulator by making a portion directly exposed to radio frequency formed of a focus ring composed of only a silicon material. CONSTITUTION: A chuck(110) supports and fixes a wafer. The focus ring(115) forms an extended area in the periphery of the chuck, disposed on the side surface of the chuck. The cover ring(120) surrounds and intercepts the chuck, disposed to contact the bottom surface of the focus ring wherein the upper portion of the cover ring is covered with the focus ring.

Abstract translation: 目的：提供晶片支撑单元，以通过使直接暴露于由仅由硅材料构成的聚焦环形成的射频的部分来最小化部件的消耗和用作绝缘体的盖环。 构成：卡盘（110）支撑并固定晶片。 聚焦环（115）在卡盘的周边形成延伸区域，设置在卡盘的侧表面上。 盖环（120）围绕和截取卡盘，设置成与聚焦环的底表面接触，其中盖环的上部被聚焦环覆盖。