公开(公告)号：KR1020140047512A

公开(公告)日：2014-04-22

申请号：KR1020130073997

申请日：2013-06-26

Applicant: 삼성전자주식회사

Inventor： 이태연 ,  정주환 ,  홍석용 ,  김태찬 ,  민동기 ,  박윤동 ,  설상철 ,  오태석 ,  유제일 ,  이광현 ,  진영구

IPC: H04N5/378 ,  H04N5/374

CPC classification number: H04N5/363 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14643 ,  H04N5/374 ,  H04N5/3742 ,  H04N5/3745 ,  H04N5/378

Abstract: A binary CMOS image sensor according to an embodiment of the present invention comprises: a pixel array including a pixel having a plurality of sub-pixels; and a readout circuit which readouts a pixel signal outputted from the pixel, wherein the readout circuit quantizes the pixel signal corresponding to the sub-pixel signals outputted from the sub-pixels activated in response to incident light among the sub-pixels by using a reference signal. A resistance value of each of the plurality of sub-pixels is determined based on a number of photons generated in response to the incident light.

Abstract translation: 根据本发明实施例的二进制CMOS图像传感器包括：包括具有多个子像素的像素的像素阵列; 以及读出电路，其读出从像素输出的像素信号，其中读出电路通过使用参考来量化与从子像素中的入射光激活的子像素输出的子像素信号相对应的像素信号 信号。 基于响应于入射光而产生的光子的数量来确定多个子像素中的每一个的电阻值。