Abstract:
본 발명은 비전도성 접착제를 사용하는 플립 칩 본딩 구조 및 그 제조 방법에 관한 것이다. 집적회로 칩은 활성면에 배열된 입출력 패드들을 포함하고, 회로 기판은 제1 표면에 배열된 범프 패드들을 포함한다. 비전도성 접착제는 플립 칩 본딩 전에 집적회로 칩의 활성면 또는 회로 기판의 제1 표면 위에 형성된다. 금속 범프는 입출력 패드 위에 형성되고 플립 칩 본딩에 의하여 범프 패드에 접합된다. 이때 비전도성 접착제는 금속 범프와 범프 패드 사이에 개재되지 않으므로 비전도성 접착제 안에 함유된 비전도성 입자들로 인한 물리적, 전기적 접속 불량을 방지할 수 있고 비전도성 입자들의 함량을 증가시킬 수 있다. 또한, 웨이퍼 상태에서의 일괄적인 플립 칩 본딩이 가능해진다. 비전도성 접착제(non-conductive adhesive; NCA), 플립 칩 본딩(flip chip bonding), 금속 범프(metal bump), 솔더 마스크(solder mask)
Abstract:
A PCB(Printed Circuit Board) and a PBGA(Plastic Ball Grid Array) using the same are provided to prevent the generation of a cut portion between a circuit line pattern and a ball land in spite of the generation of delamination between the PCB and a resin sealing part using a via formed at an inner side of the resin sealing part. A PCB includes a chip mounting region(10) for mounting a semiconductor chip, a circuit line pattern(20) around the chip mounting region, a resin sealing region(50) at an upper portion, a plurality of ball lands for contacting the circuit line pattern at a lower portion, and a via. The via(30) is used for supplying an electrical connection path between the circuit line pattern and the ball land. The via is formed at an inner side of the resin sealing region.
Abstract:
수지누설을 억제할 수 있는 반도체 패키지 몰드 금형 및 이를 이용한 반도체 패키지 제조방법에 관해 개시한다. 이를 위해 본 발명은 반도체 패키지를 몰딩(molding)할 수 있는 상부 및 하부 금형을 포함하는 금형 본체와, 금형 본체 내부에서 반도체 패키지가 몰딩되는 공간을 제공하는 다수개의 캐비티(cavity) 및 캐비티 내부 표면에 형성된 수지누설(resin bleed) 방지구조를 구비하는 것을 특징으로 하는 반도체 패키지 몰드 금형 및 이를 이용한 반도체 패키지 제조방법을 제공한다. 반도체 패키지 금형, 댐(dam), 홈(groove), 수지누설(resin bleed).
Abstract:
PURPOSE: A flip chip package and a method for manufacturing the same are provided to prevent the scattering of ultrasound by forming an opening part for exposing the upper part of a semiconductor chip. CONSTITUTION: A semiconductor chip is arranged on the upper part of a package substrate. The semiconductor chip and the package substrate are electrically connected by conductive bumps (130). A molding material (150) covers the semiconductor chip. A heat sink (140) includes an opening part. The opening part exposes the upper surface of the semiconductor chip.
Abstract:
PURPOSE: A semiconductor package is provided to dissipate the heat generated from a logic semiconductor chip using a heat radiation cap and to prevent performance degradation. CONSTITUTION: A memory chip(20) is adhered on a package substrate(10). A logic semiconductor chip(30) is adhered on the memory chip. A printed circuit board(23) includes a first pad(12) and a second pad(13). An inner solder ball(33) is arranged between the memory chip and the logic semiconductor chip. A heat radiation cap(43) covers the memory chip and the logic semiconductor chip. A heat transfer matter(41) is arranged between the heat radiation cap and the logic semiconductor chip.
Abstract:
PURPOSE: A semiconductor package and a manufacturing method thereof are provided to improve alignment efficiency of a first substrate and a second substrate by aligning second lower solder balls using a guide ring while combining the first substrate and the second substrate. CONSTITUTION: A first substrate(10) comprises a first main frame(12) and a first bump pad(22). A second substrate(50) comprises a second main frame(52) and a second bump pad(62). One or more electrodes are connected between a first pad and a second pad. A guide ring(30) is formed on the circumference of a first upper solder ball(46) and a second lower solder ball(86). The guide ring includes a tube which surrounds the electrode.
Abstract:
PURPOSE: A semiconductor device package is provided to improve the mechanical strength of a semiconductor package by forming a die pad and a lead pattern having a second thickness thicker than a first thickness. CONSTITUTION: A semiconductor chip(200) has a conducting pad. The die pad(102) has a top side(102a) and a bottom side facing with the top side. The die pad has an interval of first thickness between the top and bottom side. A lead pattern(104) comprises a second part having the second thickness(t2) thicker than the first thickness. A radiation member(300) comprises a groove arranged on the bottom side. A conductive line electrically interlinks a conductive pad with the lead pattern corresponded to the conducting pad.
Abstract:
A flip chip bonding structure has a non-conductive adhesive interposed between an integrated circuit (IC) chip and a circuit substrate. The IC chip has I/O pads on an active surface thereof, and the circuit substrate has bump pads on a first surface thereof. The non-conductive adhesive is provided on the active surface of the chip or alternatively on the first surface of the substrate, exposing the I/O pads or the bump pads respectively. Conductive bumps such as metal bumps are formed on the I/O pads and then bonded to the bump pads. With no adhesive between the metal bumps and the bump pads, non-conductive particles in the adhesive do not obstruct mechanical and electrical connections therebetween. The particle content of the non-conductive adhesive can be increased and flip chip bonding structures can be formed in a wafer level process.